US2015345040A1PendingUtilityA1

Method of manufacturing nickel-based alloy barrier layer of wiring connection terminal

Assignee: NAT INST CHUNG SHAN SCIENCE & TECHNOLOGYPriority: May 29, 2014Filed: May 29, 2014Published: Dec 3, 2015
Est. expiryMay 29, 2034(~7.8 yrs left)· nominal 20-yr term from priority
C25D 5/48C25D 5/18C25D 3/562C25D 7/0607C25D 5/623C25D 5/625C25D 5/627C25D 5/617C25D 5/619C25D 5/12
50
PatentIndex Score
0
Cited by
0
References
0
Claims

Abstract

A method of manufacturing a nickel-based alloy barrier layer of a wiring connection terminal includes providing a substrate having a metal wiring; electroplating a nickel or a nickel-based alloy to the metal wiring at a deposition rate of 15-30 μm/hr to form a first layer thereon, wherein the first layer is of a thickness of 0.5 μm-5 μm, and the nickel-based alloy layer has nickel content of at least 50%; and plating a gold layer to the first layer to form thereon a second layer of a thickness of 0.03 μm-0.3 μm. The surface of the nickel-based alloy electroplated layer features a crystalline-phase structure full of micro-protuberances, and the thickness of the gold plated layer is reduced to 0.03 μm.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A method of manufacturing a nickel-based alloy barrier layer of a wiring connection terminal, the method comprising the steps of:
 (1) providing a substrate having a metal wiring;   (2) electroplating one of a nickel layer and a nickel-based alloy layer to the metal wiring at a deposition rate of 15-30 μm/hr to form a first layer thereon, wherein the first layer is of a thickness of 0.5 μm-5 μm, and the nickel-based alloy layer has nickel content of at least 50%; and   (3) plating gold to the first layer to form a second layer thereon, the second layer being of a thickness of 0.03 μm-0.3 μm, so as to form a nickel-based alloy barrier layer of the wiring connection terminal by controlling the thickness of the first and second layers and the deposition rate.   
     
     
         2 . The method of  claim 1 , wherein the metal wiring is made of one of a copper and a copper-based alloy. 
     
     
         3 . The method of  claim 1 , wherein a main constituent element of the nickel-based alloy is nickel, and a minor constituent element of the nickel-based alloy is one of cobalt, molybdenum, tungsten, and a combination thereof. 
     
     
         4 . The method of  claim 1 , wherein the electroplating of one of the nickel layer and the nickel-based alloy layer to the metal wiring to form the first layer thereon is performed by one of brush electroplating and tank electroplating. 
     
     
         5 . The method of  claim 1 , wherein the first layer is formed by a power selected from one of a direct current (DC), a reciprocating electric power, and a pulsed electric power. 
     
     
         6 . The method of  claim 5 , wherein the power is of a current density of 0.1˜15 Amp/dm 2  (ASD). 
     
     
         7 . The method of  claim 1 , further comprising (4) soldering one of a tin layer and a tin-based alloy layer to the second layer. 
     
     
         8 . The method of  claim 1 , wherein the substrate of the metal wiring is a connection terminal or a pin of one of a semiconductor package, a printed circuit board, and an electrical connector.

Join the waitlist — get patent alerts

Track US2015345040A1 — get alerts on status changes and closely related new filings.

We store only your email — no account needed. See our privacy policy.