Reduced capacitance interlayer structures and fabrication methods

Abstract

Interlayer fabrication methods and interlayer structure are provided having reduced dielectric constants. The methods include, for example: providing a first uncured insulating layer with an evaporable material; and disposing a second uncured insulating layer having porogens above the first uncured insulating layer. The interlayer structure includes both the first and second insulating layers, and the methods further include curing the interlayer structure, leaving air gaps in the first insulating layer, and pores in the second insulating layer, where the air gaps are larger than the pores, and where the air gaps and pores reduce the dielectric constant of the interlayer structure.

1 - 16 . (canceled) 
     
     
         17 . A structure comprising:
 an interlayer structure, the interlayer structure comprising:
 a first insulating layer, the first insulating layer comprising air gaps; 
 a second insulating layer disposed over the first insulating layer, the second insulating layer comprising pores, wherein the air gaps are larger than the pores; and 
 a conductive structure extending through the second insulating layer of the interlayer structure and at least partially into the first insulating layer of the interlayer structure, wherein the second insulating layer comprising the pores facilitates maintaining structural stability of the conductive structure within the interlayer structure, notwithstanding the presences of the larger air gaps within the first insulating layer of the interlayer structure. 
   
     
     
         18 . The structure of  claim 17 , wherein the interlayer structure further comprises a third insulating layer disposed below the first insulating layer, the third insulating layer comprising the pores, and the first insulating layer is disposed between the third insulating layer and the second insulating layer, and wherein the third insulating layer comprising the pores facilitates maintaining structural stability of the conductive structure within the interlayer structure, notwithstanding the presence of the larger air gaps within the first insulating layer of the interlayer structure. 
     
     
         19 . The structure of  claim 18 , further comprising:
 a metal layer disposed below the interlayer structure; and   another metal layer disposed above the interlayer structure, wherein the conductive structure extends between the metal layer and the another metal layer, and facilitates electrical connection of the metal layer and the another metal layer.   
     
     
         20 . The structure of  claim 17 , wherein the interlayer structure has a dielectric constant between 1.8 and 2.0. 
     
     
         21 . The structure of  claim 17 , further comprising:
 at least one opening in the interlayer structure, the at least one opening extending through the second uncured layer and at least partially into the first uncured layer; and   a conductive material disposed within the at least one opening, the conductive material comprising a conductive structure.   
     
     
         22 . The structure of  claim 21 , wherein, the second insulating layer comprising the pores facilitates maintaining structural stability of the conductive structure within the interlayer structure, notwithstanding the presence of the larger air gaps within the first insulating layer. 
     
     
         23 . The structure of  claim 21 , further comprising a substrate structure disposed below the interlayer structure, wherein the substrate structure comprises a metal layer disposed above a substrate of the substrate structure, and wherein the conductive structure extends to the metal layer. 
     
     
         24 . The structure of  claim 23 , further comprising another metal layer over the interlayer structure, wherein the conductive structure facilitates electrical connection between the metal layer and the another metal layer. 
     
     
         25 . The structure of  claim 24 , wherein the substrate structure further comprises a device layer, wherein the device layer is disposed below the metal layer, and wherein the conductive structure facilitates electrical connection between the device layer and the another metal layer. 
     
     
         26 . The structure of  claim 17 , wherein the first insulating layer comprises a first C x H y  material, and the second insulating layer comprises a second C x H y  material. 
     
     
         27 . The structure of  claim 17 , wherein the second insulating layer comprises one of a terpinene or a cyclodextrin, and the second insulating layer comprises a C x H y  material. 
     
     
         28 . The structure of  claim 17 , wherein the first insulating layer has a thickness of between 30 and 60 nanometers, and the second insulating layer has a thickness of between 30 and 60 nanometers. 
     
     
         29 . A structure comprising:
 an interlayer structure, the interlayer structure comprising:
 a first insulating layer, the first insulating layer comprising air gaps; 
 a second insulating layer disposed over the first insulating layer, the second insulating layer comprising pores, wherein the air gaps are larger than the pores; 
 a conductive structure extending through the second insulating layer of the interlayer structure and at least partially into the first insulating layer of the interlayer structure, wherein the second insulating layer comprising the pores facilitates maintaining structural stability of the conductive structure within the interlayer structure, notwithstanding the presences of the larger air gaps within the first insulating layer of the interlayer structure; and 
 wherein the interlayer structure further comprises a third insulating layer disposed below the first insulating layer, the third insulating layer comprising the pores, and the first insulating layer is disposed between the third insulating layer and the second insulating layer, and wherein the third insulating layer comprising the pores facilitates maintaining structural stability of the conductive structure within the interlayer structure, notwithstanding the presence of the larger air gaps within the first insulating layer of the interlayer structure. 
   
     
     
         30 . The structure of  claim 29 , further comprising:
 at least one opening in the interlayer structure, the at least one opening extending through the second uncured layer and at least partially into the first uncured layer; and   a conductive material disposed within the at least one opening, the conductive material comprising a conductive structure.   
     
     
         31 . The structure of  claim 29 , wherein the first insulating layer comprises a first C x H y  material, and the second insulating layer comprises a second C x H y  material. 
     
     
         32 . The structure of  claim 29 , wherein the second insulating layer comprises one of a terpinene or a cyclodextrin, and the second insulating layer comprises a C y  material. 
     
     
         33 . The structure of  claim 29 , wherein the first insulating layer has a thickness of between 30 and 60 nanometers, and the second insulating layer has a thickness of between 30 and 60 nanometers.