Methods of fabricating defect-free semiconductor structures

Abstract

Methods of facilitating fabrication of defect-free semiconductor structures are provided which include, for instance: providing a dielectric layer, the dielectric layer comprising at least one consumable material; selectively removing a portion of the dielectric layer, wherein the selectively removing consumes, in part, a remaining portion of the at least one consumable material, leaving, within the remaining portion of the dielectric layer, a depleted region; and subjecting the depleted region of the dielectric layer to a treatment process, to restore the depleted region with at least one replacement consumable material, thereby facilitating fabrication of a defect-free semiconductor structure.

1 - 14 . (canceled) 
     
     
         15 . A semiconductor structure comprising:
 an interlayer structure, the interlayer structure comprising:
 at least one first dielectric layer disposed above a semiconductor substrate, one first dielectric layer of the at least one first dielectric layer having a first elemental composition, wherein the first elemental composition comprises at least one implanted replacement consumable material, wherein said at least one implanted replacement consumable material comprises at least one of: (i) doping or dopant material and (ii) undoped silicon; and 
 a second dielectric layer disposed above the at least one first dielectric layer, the second dielectric layer having a second elemental composition, wherein the second elemental composition comprises at least one consumable material. 
   
     
     
         16 . The semiconductor structure of  claim 15 , wherein the at least one consumable material of the second dielectric layer and the at least one implanted replacement consumable material of the at least one first dielectric layer comprise a same material, the same material comprising at least one of: (i) nitrogen, (ii) phosphorus and (iii) undoped silicon. 
     
     
         17 . The semiconductor structure of  claim 15 , wherein the second dielectric layer having the second elemental composition and the one first dielectric layer of the at least one first dielectric layer having the first elemental composition comprise a same material. 
     
     
         18 . The semiconductor structure of  claim 17 , wherein the same material comprises at least one of: (i) a silicon-based high aspect ratio oxide and (ii) a doping or dopant material. 
     
     
         19 . The semiconductor structure of  claim 18 , wherein the doping or dopant material comprises at least one of: (i) nitrogen and (ii) phosphorus. 
     
     
         20 . The semiconductor structure of  claim 15 , wherein the semiconductor structure further comprises a substantially planar, defect-free semiconductor structure, wherein the interlayer structure of the substantially planar, defect-free semiconductor structure comprises the one first dielectric layer of the at least one first dielectric layer, and the second dielectric layer disposed over the one first dielectric layer of the at least one first dielectric layer.