US2015368557A1PendingUtilityA1

Metal etchant compositions and methods of fabricating a semiconductor device using the same

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Assignee: LEE HYOSANPriority: Jun 23, 2014Filed: Jun 23, 2014Published: Dec 24, 2015
Est. expiryJun 23, 2034(~7.9 yrs left)· nominal 20-yr term from priority
Inventors:Hyosan LeeYongsun KoKyoungseob KimKuntack LeeJihoon JeongChen LinChristopher K. Ober
H10P 76/204H10P 72/0424H10P 72/0402H10P 70/234H10P 50/667H10P 50/283H10W 72/9415H10W 72/01953H10W 72/952H10W 72/29H10W 72/012H10W 20/081C09K 13/00C23F 1/20C23F 1/26C09K 13/08C23F 1/18
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Claims

Abstract

The present inventive concepts provide metal etchant compositions and methods of fabricating a semiconductor device using the same. The metal etchant composition includes an organic peroxide in a range of about 0.1 wt % to about 20 wt %, an organic acid in a range of about 0.1 wt % to about 70 wt %, and an alcohol-based solvent in a range of about 10 wt % to about 99.8 wt %. The metal etchant composition may be used in an anhydrous system.

Claims

exact text as granted — not AI-modified
1 . A metal etchant composition comprising:
 an organic peroxide in a concentration in a range of about 0.1 to about 20 wt. % based on the total weight of the composition;   an organic acid in a concentration in a range of about 0.1 to about 70 wt. % based on the total weight of the composition; and   an alcohol-based solvent in a concentration in a range of about 10 to about 99.8 wt. % based on the total weight of the composition.   
     
     
         2 . The metal etchant composition of  claim 1 , wherein at least one of titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), aluminum (Al), tungsten (W), or copper (Cu) is etched by the metal etchant composition. 
     
     
         3 . The metal etchant composition of  claim 1 , wherein the organic peroxide includes at least one peroxy ester having a structure of Formula 1, at least one peroxy acid having a structure of Formula 2, at least one diacyl peroxide having a structure of Formula 3, and/or at least one peroxy dicarbonate having a structure of Formula 4, 
       
         
           
           
               
               
           
         
         wherein R and R′ are each independently a hydrocarbon compound. 
       
     
     
         4 . The metal etchant composition of  claim 3 , wherein the organic peroxide includes at least one of t-butyl peroxyacetic acid, lauroyl peroxide, or ethyl peroxy dicarbonate. 
     
     
         5 . The metal etchant composition of  claim 1 , wherein the organic acid has a carbon compound structure including 3 to 11 fluorine atoms or 3 to 35 hydrogen atoms. 
     
     
         6 . The metal etchant composition of  claim 5 , wherein the organic acid includes at least one of 2,2,2-trifluoroethanoic acid (CF 3 COOH), 2,2,3,3,4,4,4-heptafluorobutanoic acid (CF 3 CF 2 CF 2 COOH), acetic acid (CH 3 COOH), or butanoic acid (CH 3 CH 2 CH 2 COOH). 
     
     
         7 . The metal etchant composition of  claim 1 , wherein the alcohol-based solvent includes 1 to 15 carbon atom(s). 
     
     
         8 . The metal etchant composition of  claim 7 , wherein the alcohol-based solvent includes at least one of methanol, ethanol, propanol, isopropanol, heptanol, or octanol. 
     
     
         9 . The metal etchant composition of  claim 1 , further comprising:
 a chelating agent in a concentration in a range of about 0 to about 3 wt. % based on the total weight of the composition.   
     
     
         10 . The metal etchant composition of  claim 9 , wherein the chelating agent includes two or more carbonyl groups or two or more amine groups. 
     
     
         11 . The metal etchant composition of  claim 10 , wherein the chelating agent includes at least one of 1,1,1,5,5,5-hexafluoro-2,4-pentanedione [CF 3 C(O)CH 2 C(O)CF 3 ], 1,1,1-trifluoro-2,4-pentanedione [CH 3 C(O)CH 2 C(O)CF 3 ], or pentane-2,4-dione [CH 3 C(O)CH 2 C(O)CH 3 ]. 
     
     
         12 . The metal etchant composition of  claim 1 , further comprising:
 a surface active agent in a concentration in a range of about 0 to about 3 wt. % based on the total weight of the composition.   
     
     
         13 . The metal etchant composition of  claim 12 , wherein the surface active agent is a fluorine-based surface active agent. 
     
     
         14 .- 22 . (canceled) 
     
     
         23 . A composition comprising:
 an organic peroxide;   an organic acid; and   an alcohol-based solvent,   wherein the composition is anhydrous.   
     
     
         24 . The composition of  claim 23 , wherein the organic peroxide and the organic acid are present in the composition in a ratio in a range of about 1:1 to about 1:5 (organic peroxide:organic acid). 
     
     
         25 . The composition of  claim 23 , wherein the composition provides an etch rate of a metal layer of about 15 Å/hour to about 40 Å/hour. 
     
     
         26 . The composition of  claim 25 , wherein the metal layer comprises at least one of titanium (Ti), titanium nitride (TiN), tantalum (Ta), tantalum nitride (TaN), aluminum (Al), tungsten (W), or copper (Cu). 
     
     
         27 . The composition of  claim 23 , wherein the organic peroxide is present in a concentration in a range of about 0.1 to about 20 wt. % based on the total weight of the composition,
 the organic acid is present in a concentration in a range of about 0.1 to about 70 wt. % based on the total weight of the composition, and   the alcohol-based solvent is present in a concentration in a range of about 10 to about 99.8 wt. % based on the total weight of the composition.   
     
     
         28 . The composition of  claim 23 , further comprising a supercritical fluid. 
     
     
         29 . The composition of  claim 23 , wherein the composition generates oxygen radicals. 
     
     
         30 . (canceled)

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