Block co-polymer photoresist

Abstract

An integrated circuit is made by depositing a pinning layer on a substrate. A block copolymer photoresist is formed on the pinning layer. The block copolymer has two blocks A and B that do not self-assemble under at least some annealing conditions. The exposed block copolymer photoresist is processed to cleave at least some block copolymer bonds in the exposed selected regions. The exposed pinning layer is processed to create a chemical epitaxial pattern to direct the local self assembly of the block copolymer.

1 . A method of making an integrated circuit comprising:
 depositing a pinning layer on a substrate;   forming a block copolymer photoresist on the pinning layer;   wherein the block copolymer has two blocks A and B that do not self-assemble under at least some annealing conditions;   exposing selected regions of the block copolymer photoresist and the pinning layer;   processing the exposed block copolymer photoresist to cleave at least some block copolymer bonds in the exposed selected regions;   processing the expose pinning layer to create a chemical epitaxial pattern to direct the local self assembly of the block copolymer;   processing further includes changing A to A′ such that A′ and B self-assemble under said at least some annealing conditions;   annealing the wafer under said at least some annealing conditions;   developing the block copolymer photoresist; and   further processing said substrate to make an integrated circuit.   
     
     
         2 . An integrated circuit device made by a method including:
 depositing a pinning layer on a substrate;   forming a block copolymer photoresist on the pinning layer;   wherein the block copolymer has two blocks A and B that do not self-assemble under at least some annealing conditions;   exposing selected regions of the block copolymer photoresist and the pinning layer;   processing the exposed block copolymer photoresist to cleave at least some block copolymer bonds in the exposed selected regions;   processing the expose pinning layer to create a chemical epitaxial pattern to direct the local self assembly of the block copolymer;   processing further includes changing A to A′ such that A′ and B self-assemble under said at least some annealing conditions;   annealing the wafer under said at least some annealing conditions;   developing the block copolymer photoresist; and   further processing said substrate to form integrated circuitry thereon.   
     
     
         3 . A method of making an integrated circuit comprising:
 forming a block copolymer photoresist on a substrate;   wherein the block copolymer has three blocks A, B, and C with block B in the middle and A and C at the ends;   wherein the block copolymer would self assemble under a certain set of annealing condition with A and B in one phase and C in the other phase;   exposing selected regions of the block copolymer photoresist;   processing the exposed block copolymer photoresist to cleave at least some block copolymer bonds in the exposed selected regions;   processing further includes changing B to B′ such that that the block copolymer would self assemble under a certain set of annealing condition with A in one phase and B and C in the other phase;   developing the block copolymer photoresist; and   further processing said substrate to make an integrated circuit.   
     
     
         4 . An integrated circuit device made by a method including:
 forming a block copolymer photoresist on a substrate;   wherein the block copolymer has three blocks A, B, and C with block B in the middle and A and C at the ends;   wherein the block copolymer would self assemble under a certain set of annealing condition with A and B in one phase and C in the other phase;   exposing selected regions of the block copolymer photoresist;   processing the exposed block copolymer photoresist to cleave at least some block copolymer bonds in the exposed selected regions;   processing further includes changing B to B′ such that that the block copolymer would self assemble under a certain set of annealing condition with A in one phase and B and C in the other phase;   developing the block copolymer photoresist; and   further processing said substrate to form integrated circuitry thereon.