Method for manufacturing a wafer

Abstract

A method for manufacturing a wafer includes forming a plurality nano-pillars on a surface of a brick; forming a cover layer on the surfaces of the brick, wherein the cover layer covers the nano-pillars; forming an adhesive layer on the surface of the cover layer; cutting the brick into a plurality of wafers; and removing the cover layer and the adhesive layer on the wafers by a solvent, wherein the solvent reacts with the cover layer but not reacts with the brick.

What is claimed is: 
     
         1 . A method for manufacturing a wafer, comprising:
 forming a plurality nano-pillars on a surface of a brick;   forming a cover layer on the surfaces of the brick, wherein the cover layer covers the nano-pillars;   forming an adhesive layer on the surface of the cover layer;   cutting the brick into a plurality of wafers; and   removing the cover layer and the adhesive layer on the wafers by a solvent,   wherein the solvent reacts with the cover layer but not reacts with the brick.   
     
     
         2 . The method for manufacturing a wafer of  claim 1 , wherein the cover layer is an oxide layer or a nitride layer. 
     
     
         3 . The method for manufacturing a wafer of  claim 2 , wherein the step of removing the cover layer is proceeded at 0 to 200° C. 
     
     
         4 . The method for manufacturing a wafer of  claim 3 , wherein the cover layer is silicon dioxide (SiO 2 ), and the solvent is hydrogen fluoride (HF). 
     
     
         5 . The method for manufacturing a wafer of  claim 4 , wherein the cover layer is formed by applying tetraethyl orthosilicate on the surface of the brick, placing the brick into a chamber and heating the chamber including the brick. 
     
     
         6 . The method for manufacturing a wafer of  claim 4 , wherein the cover layer is formed by placing the brick into a chamber, passing an oxidizing gas into the chamber and heating the chamber including the brick and the oxidizing gas, wherein the oxidizing gas is oxygen gas, silane, or mixture of the oxygen gas and silane. 
     
     
         7 . The method for manufacturing a wafer of  claim 3 , wherein the cover layer is silicon nitride (Si 3 N 4 ), and the solvent is phosphoric acid (H 3 PO 4 ). 
     
     
         8 . The method for manufacturing a wafer of  claim 2 , wherein the forming the cover layer is forming the cover layer by a chemical reaction method, a vapor reaction method, a vapor deposition method, a sol-gel method, a deposition method, a sputtering method, or a liquid phase deposition. 
     
     
         9 . The method for manufacturing a wafer of  claim 1 , wherein the length of the nano-pillars is between 1 to 15 μm. 
     
     
         10 . The method for manufacturing a wafer of  claim 9 , wherein the length of the nano-pillars is between 4 to 10 μm.