Systems and Methods Using an RF Circuit on Isolating Material

Abstract

A device is disclosed that includes a wafer/chip, a first layer, a first device, an isolation mold and a second device. The first layer is formed over the chip and has non-isolating characteristics. The first device is formed over the first layer. In one example, it is formed only over the first layer. The isolation mold is formed over the chip. The isolation mold has isolating characteristics. The second device is formed substantially over the isolation mold.

1 . An device that enhances signal integrity comprising:
 a chip;   a first layer formed over the chip, wherein the first layer has non-isolating characteristics;   a first device formed on the chip and within the first layer;   a target area where portions of the chip have been removed;   an isolation mold formed within the target area, wherein the isolation mold has isolating characteristics and comprises an encapsulation material; and   a second device formed on the first layer and within the target area, wherein the isolation mold provides the isolating characteristics to the second device.   
     
     
         2 . The device of  claim 1 , wherein the chip has a silicon material. 
     
     
         3 . The device of  claim 1 , wherein the chip is an artificial wafer. 
     
     
         4 . The device of  claim 1 , wherein the chip and the isolation mold are comprised of the same material. 
     
     
         5 . The device of  claim 1 , wherein the non-isolating characteristics include resistivity, capacitive coupling, and inductive coupling and cause non-linear behavior in high frequency components, and wherein the second device is a high frequency component. 
     
     
         6 . The device of  claim 1 , wherein the isolating characteristics of the isolation mold include one or more of an absence of free carriers and relatively high resistivity. 
     
     
         7 . The device of  claim 1 , wherein the isolation mold is configured to mitigate generation of harmonic signals. 
     
     
         8 . The device of  claim 1 , wherein the second device includes one or more of a metal line, a capacitor, a metal capacitor, a transistor, an isolator, a resistor, a terminal, a contact and an inductor. 
     
     
         9 . The device of  claim 1 , wherein the second device uses relatively high frequency signals susceptible to generation of harmonics. 
     
     
         10 . The device of  claim 1 , wherein the encapsulation material includes one of the group comprising plastic, buffering material, and encapsulants. 
     
     
         11 . The device of  claim 1 , wherein the isolation mold is within an identified target area. 
     
     
         12 . The device of  claim 1 , wherein the target area includes a sidewall. 
     
     
         13 - 20 . (canceled) 
     
     
         21 . The device of  claim 1 , where the isolation mold has a depth according to circuits within the second device. 
     
     
         22 . A device comprising:
 a substrate having a first surface and an opposing second surface;   a first layer formed over the first surface of the substrate, wherein the first layer has non-isolating characteristics;   a first device formed within the first layer;   a target area defined by at least portions of the substrate that have been removed from the second surface thereof, wherein portions of the first layer are exposed in the target area at a bottom surface thereof;   an isolation mold formed over the bottom surface of the first layer in the target area and over the second surface of a remaining portion of the substrate; and   a second device formed on a top surface of the first layer in a region association with the target area,   wherein the isolation mold provides isolating characteristics to the second device.   
     
     
         23 . The device of  claim 22 , wherein the non-isolating characteristics include resistivity, capacitive coupling, and inductive coupling and cause non-linear behavior in high frequency components, and wherein the second device is a high frequency component. 
     
     
         24 . The device of  claim 23 , wherein the isolation mold is configured to mitigate generation of harmonic signals. 
     
     
         25 . The device of  claim 24 , wherein the second device includes one or more of a metal line, a capacitor, a metal capacitor, a transistor, an isolator, a resistor, a terminal, a contact and an inductor. 
     
     
         26 . The device of  claim 25 , wherein the second device uses relatively high frequency signals susceptible to generation of harmonics.