Substrate including selectively formed barrier layer

Abstract

A method of selectively locating a barrier layer on a substrate includes forming a barrier layer on a surface of the substrate. The barrier layer comprises of a metal element and a non-metal element. The barrier layer may also be formed from a metal element and non-metal element. The method further includes forming an electrically conductive film layer on the barrier layer, and forming a metallic portion in the electrically conductive film layer. The method further includes selectively ablating portions of the barrier layer from the dielectric layer to selectively locate place the barrier layer on the substrate.

What is claimed is: 
     
         1 . A method of selectively locating a barrier layer on a substrate, the method comprising:
 forming a dielectric layer on a surface of the substrate, and forming a barrier layer on an upper surface of the dielectric layer, the barrier layer comprising a metal element and a non-metal element;   forming an electrically conductive film layer on the barrier layer;   forming a surface component on the electrically conductive film layer;   performing a first etching process that removes the conductive film layer with respect to the barrier layer; and   after performing the first etching process, performing a selective laser ablation process to selectively ablate the barrier layer with respect to the dielectric layer, the selective laser ablation process including selectively radiating a first portion of the dielectric layer to a first temperature while radiating a second portion of the dielectric layer to a second temperature less than the first temperature based on a thickness of a surface component and a thickness of the barrier layer, wherein the surface component has a first thickness and the barrier layer has a second thickness less than the first thickness.