US2016332873A1PendingUtilityA1
Devices with thinned wafer
Est. expiryMar 3, 2034(~7.7 yrs left)· nominal 20-yr term from priority
Inventors:Andre BrockmeierChristian KalousekKatharina MaierPeter ZornKai-Alexander SchreiberFrancesco Solazzi
B81C 99/001B81C 2201/053B81C 2900/00B81C 2201/0111B81C 2203/031B81C 2201/0136B81C 1/00619B81C 1/0015B32B 38/08B81C 99/0005B81C 2203/0109B81B 7/008B81C 1/00357Y10T156/15B81C 2203/0735B81C 2201/014B32B 37/0046B81C 1/00238B81C 1/00492B32B 38/10B32B 2457/14
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Claims
Abstract
Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 μm or below.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . An apparatus, comprising:
a carrier wafer bonding device configured to irreversibly bond a carrier wafer to a main wafer at a front side of the main wafer, a thinning device configured to thin the main wafer from a back side thereof, and a material removal device configured to selectively remove material from the back side of the main wafer, the second material removal device being downstream of the thinning device.
2 . The apparatus of claim 1 , further comprising a further material removal device upstream of the carrier wafer bonding device, the further material removal device configured to remove material at a front side of the wafer at a location where a hole through the main wafer is to be formed.
3 . The apparatus of claim 1 , further comprising a filling device configured to fill gaps generated by the material removal of the further material removal device with a filling material.
4 . The apparatus of claim 1 , wherein the apparatus is configured to manufacture a micro-electro-mechanical system.
5 . A micro-electro-mechanical system, comprising:
a main wafer with micro-electro-mechanical structures formed therein, a thickness of the main wafer being less than 300 μm, and a carrier wafer irreversibly bonded to a front side of the main wafer.
6 . The device of claim 5 , wherein a thickness of the main wafer is less than 100 μm.
7 . The device of claim 5 , wherein the main wafer comprises at least one of an acceleration sensor or a pressure sensor.
8 . The device of claim 5 , wherein the carrier wafer comprises a structured glass wafer.
9 . The device of claim 5 , further comprising:
an application specific integrated circuit mounted on top of the carrier wafer and the main wafer, and a package packaging the application specific integrated circuit, the main wafer and the carrier wafer.Cited by (0)
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