US2016332873A1PendingUtilityA1

Devices with thinned wafer

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Assignee: INFINEON TECHNOLOGIES AGPriority: Mar 3, 2014Filed: Jul 29, 2016Published: Nov 17, 2016
Est. expiryMar 3, 2034(~7.7 yrs left)· nominal 20-yr term from priority
B81C 99/001B81C 2201/053B81C 2900/00B81C 2201/0111B81C 2203/031B81C 2201/0136B81C 1/00619B81C 1/0015B32B 38/08B81C 99/0005B81C 2203/0109B81B 7/008B81C 1/00357Y10T156/15B81C 2203/0735B81C 2201/014B32B 37/0046B81C 1/00238B81C 1/00492B32B 38/10B32B 2457/14
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Claims

Abstract

Methods, apparatuses and devices are described where a main wafer is irreversibly bonded to a carrier wafer and thinned to reduce a thickness of the main wafer, for example down to a thickness of 300 μm or below.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . An apparatus, comprising:
 a carrier wafer bonding device configured to irreversibly bond a carrier wafer to a main wafer at a front side of the main wafer,   a thinning device configured to thin the main wafer from a back side thereof, and   a material removal device configured to selectively remove material from the back side of the main wafer, the second material removal device being downstream of the thinning device.   
     
     
         2 . The apparatus of  claim 1 , further comprising a further material removal device upstream of the carrier wafer bonding device, the further material removal device configured to remove material at a front side of the wafer at a location where a hole through the main wafer is to be formed. 
     
     
         3 . The apparatus of  claim 1 , further comprising a filling device configured to fill gaps generated by the material removal of the further material removal device with a filling material. 
     
     
         4 . The apparatus of  claim 1 , wherein the apparatus is configured to manufacture a micro-electro-mechanical system. 
     
     
         5 . A micro-electro-mechanical system, comprising:
 a main wafer with micro-electro-mechanical structures formed therein, a thickness of the main wafer being less than 300 μm, and   a carrier wafer irreversibly bonded to a front side of the main wafer.   
     
     
         6 . The device of  claim 5 , wherein a thickness of the main wafer is less than 100 μm. 
     
     
         7 . The device of  claim 5 , wherein the main wafer comprises at least one of an acceleration sensor or a pressure sensor. 
     
     
         8 . The device of  claim 5 , wherein the carrier wafer comprises a structured glass wafer. 
     
     
         9 . The device of  claim 5 , further comprising:
 an application specific integrated circuit mounted on top of the carrier wafer and the main wafer, and   a package packaging the application specific integrated circuit, the main wafer and the carrier wafer.

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