Semiconductor package structure and method of the same

Abstract

The disclosure provides a semiconductor package structure, including a substrate having a front side and a back side, a first insulating layer disposed on the front side of the substrate, and a die disposed on the first insulating layer; wherein the die includes a first die pad and a second die pad, the first die pad coupled to a first portion of a metal layer, the second die pad coupled to a second portion of the metal layer, and the first portion of the metal layer and the second portion of the metal layer spaced apart by a second insulating layer. An associated semiconductor packaging method and another semiconductor package structure are also disclosed.

What is claimed is: 
     
         1 . A semiconductor package structure, comprising:
 an insulating substrate in the absence of metal members, comprising a front side and a back side;   a first insulating layer disposed on the front side of the substrate; and   a die disposed on the first insulating layer;   wherein the die comprises a first die pad and a second die pad, the first die pad is coupled to a first portion of a metal layer, the second die pad is coupled to a second portion of the metal layer, and the first portion of the metal layer and the second portion of the metal layer are spaced apart by a second insulating layer.   
     
     
         2 . The semiconductor package structure of  claim 1 , further comprising a protection layer disposed on the back side of the substrate. 
     
     
         3 . The semiconductor package structure of  claim 1 , wherein the metal layer is selected from at least one of palladium, aluminum, chromium, nickel, titanium, gold, copper and platinum. 
     
     
         4 . The semiconductor package structure of  claim 1 , wherein the first insulating layer and the second insulating layer are photosensitive dry films comprising constituents selected from at least one of polyimide, epoxy resin, benzocyclobutene resin and polymer. 
     
     
         5 . The semiconductor package structure of  claim 1 , wherein at least a portion of the metal layer above two terminals of the substrate is exposed. 
     
     
         6 . The semiconductor package structure of  claim 5 , wherein the semiconductor package structure comprises a first metal terminal disposed on a terminal of the substrate and coupled to the first portion of the metal layer, and the semiconductor package structure comprises a second metal terminal disposed on another terminal of the substrate and coupled to the second portion of the metal layer. 
     
     
         7 . The semiconductor package structure of  claim 6 , wherein the first metal terminal and the second metal terminal are selected from at least one of silver and copper. 
     
     
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         18 . A semiconductor package structure, comprising:
 an insulating substrate in the absence of metal members, comprising a front side and a back side;   a first insulating layer disposed on the front side of the substrate; and   a die disposed on the first insulating layer;   wherein the die comprises a first die pad and a second die pad, the first die pad is coupled to a first portion of a metal layer, the second die pad is coupled to a second portion of the metal layer, and the first portion of the metal layer and the second portion of the metal layer are spaced apart by a second insulating layer;   wherein the die has an upper surface and a bottom surface, the first die pad and the second die pad are disposed on the upper surface, and the second surface is attached to the first insulating layer.   
     
     
         19 . A semiconductor package structure, comprising:
 an insulating substrate in the absence of metal members, comprising a front side and a back side;   a first insulating layer disposed on the front side of the substrate; and   a die disposed on the first insulating layer;   wherein the die comprises a first die pad and a second die pad, the first die pad is coupled to a first portion of a metal layer, the second die pad is coupled to a second portion of the metal layer, and the first portion of the metal layer and the second portion of the metal layer are spaced apart by a second insulating layer;   wherein the die has an upper surface and a bottom surface, the first die pad and the second die pad are disposed on the upper surface, and the second surface is attached to the first insulating layer;   wherein the metal layer is disposed above the upper surface of the die.