US2017017151A1PendingUtilityA1

Reflective mask cleaning apparatus and reflective mask cleaning method

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Assignee: SHIBAURA MECHATRONICS CORPPriority: Mar 11, 2014Filed: Feb 19, 2015Published: Jan 19, 2017
Est. expiryMar 11, 2034(~7.7 yrs left)· nominal 20-yr term from priority
G03F 1/82G03F 1/24B08B 7/0035G03F 7/70925G03F 7/0045G03F 7/422
48
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Claims

Abstract

A reflective mask cleaning apparatus according to an embodiment comprises a first supply section configured to supply a first solution containing at least one of an organic solvent and a surfactant to a ruthenium-containing capping layer provided in a reflective mask; and a second supply section configured to supply at least one of a reducing solution and an oxygen-free solution to the capping layer. A reflective mask cleaning apparatus according to an alternative embodiment comprises a third supply section configured to supply a plasma product produced from a reducing gas to a ruthenium-containing capping layer provided in a reflective mask; and a second supply section configured to supply at least one of a reducing solution and an oxygen-free solution to the capping layer.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 - 14 . (canceled) 
     
     
         15 . A reflective mask cleaning apparatus comprising:
 a first supply section configured to supply a first solution containing at least one of an organic solvent and a surfactant to a ruthenium-containing capping layer provided in a reflective mask; and   a second supply section configured to supply at least one of a reducing solution and an oxygen-free solution to the capping layer.   
     
     
         16 . A reflective mask cleaning apparatus comprising:
 a third supply section configured to supply a plasma product produced from a reducing gas to a ruthenium-containing capping layer provided in a reflective mask; and   a second supply section configured to supply at least one of a reducing solution and an oxygen-free solution to the capping layer.   
     
     
         17 . The apparatus according to  claim 15 , wherein the first supply section supplies the first solution to the reflective mask having a surface to which organic matter is attached. 
     
     
         18 . The apparatus according to  claim 16 , wherein the third supply section supplies the plasma product to the reflective mask having a surface to which organic matter is attached. 
     
     
         19 . The apparatus according to  claim 15 , wherein
 the capping layer further contains ruthenium oxide, and   the second supply section reduces the ruthenium oxide by supplying at least one of the reducing solution and the oxygen-free solution to decrease ratio of the ruthenium oxide in the capping layer.   
     
     
         20 . The apparatus according to  claim 16 , wherein
 the capping layer further contains ruthenium oxide, and   the second supply section reduces the ruthenium oxide by supplying at least one of the reducing solution and the oxygen-free solution to decrease ratio of the ruthenium oxide in the capping layer.   
     
     
         21 . The apparatus according to  claim 15 , wherein the reflective mask includes a pattern region and a light shielding region provided so as to surround the pattern region, and the capping layer is exposed in the pattern region. 
     
     
         22 . The apparatus according to  claim 16 , wherein the reflective mask includes a pattern region and a light shielding region provided so as to surround the pattern region, and the capping layer is exposed in the pattern region. 
     
     
         23 . The apparatus according to  claim 16 , wherein the reducing gas contains ammonia or hydrogen. 
     
     
         24 . The apparatus according to  claim 15 , wherein the organic solvent is isopropyl alcohol or acetone. 
     
     
         25 . A reflective mask cleaning method comprising:
 supplying a first solution containing at least one of an organic solvent and a surfactant to a ruthenium-containing capping layer provided in a reflective mask; and   supplying at least one of a reducing solution and an oxygen-free solution to the capping layer.   
     
     
         26 . A reflective mask cleaning method comprising:
 supplying a plasma product produced from a reducing gas to a ruthenium-containing capping layer provided in a reflective mask; and   supplying at least one of a reducing solution and an oxygen-free solution to the capping layer.   
     
     
         27 . The method according to  claim 25 , wherein the supplying a first solution includes supplying the first solution to the reflective mask having a surface to which organic matter is attached. 
     
     
         28 . The method according to  claim 26 , wherein the supplying a plasma product produced from a reducing gas includes supplying the plasma product to the reflective mask having a surface to which organic matter is attached. 
     
     
         29 . The method according to  claim 25 , wherein the reflective mask includes a pattern region and a light shielding region provided so as to surround the pattern region, and the capping layer is exposed in the pattern region. 
     
     
         30 . The method according to  claim 26 , wherein the reflective mask includes a pattern region and a light shielding region provided so as to surround the pattern region, and the capping layer is exposed in the pattern region. 
     
     
         31 . The method according to  claim 25 , wherein
 the capping layer further contains ruthenium oxide, and   the supplying at least one of a reducing solution and an oxygen-free solution includes reducing the ruthenium oxide by supplying at least one of the reducing solution and the oxygen-free solution to decrease ratio of the ruthenium oxide in the capping layer.   
     
     
         32 . The method according to  claim 26 , wherein
 the capping layer further contains ruthenium oxide, and   the supplying at least one of a reducing solution and an oxygen-free solution includes reducing the ruthenium oxide by supplying at least one of the reducing solution and the oxygen-free solution to decrease ratio of the ruthenium oxide in the capping layer.

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