Reflective mask cleaning apparatus and reflective mask cleaning method
Abstract
A reflective mask cleaning apparatus according to an embodiment comprises a first supply section configured to supply a first solution containing at least one of an organic solvent and a surfactant to a ruthenium-containing capping layer provided in a reflective mask; and a second supply section configured to supply at least one of a reducing solution and an oxygen-free solution to the capping layer. A reflective mask cleaning apparatus according to an alternative embodiment comprises a third supply section configured to supply a plasma product produced from a reducing gas to a ruthenium-containing capping layer provided in a reflective mask; and a second supply section configured to supply at least one of a reducing solution and an oxygen-free solution to the capping layer.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 - 14 . (canceled)
15 . A reflective mask cleaning apparatus comprising:
a first supply section configured to supply a first solution containing at least one of an organic solvent and a surfactant to a ruthenium-containing capping layer provided in a reflective mask; and a second supply section configured to supply at least one of a reducing solution and an oxygen-free solution to the capping layer.
16 . A reflective mask cleaning apparatus comprising:
a third supply section configured to supply a plasma product produced from a reducing gas to a ruthenium-containing capping layer provided in a reflective mask; and a second supply section configured to supply at least one of a reducing solution and an oxygen-free solution to the capping layer.
17 . The apparatus according to claim 15 , wherein the first supply section supplies the first solution to the reflective mask having a surface to which organic matter is attached.
18 . The apparatus according to claim 16 , wherein the third supply section supplies the plasma product to the reflective mask having a surface to which organic matter is attached.
19 . The apparatus according to claim 15 , wherein
the capping layer further contains ruthenium oxide, and the second supply section reduces the ruthenium oxide by supplying at least one of the reducing solution and the oxygen-free solution to decrease ratio of the ruthenium oxide in the capping layer.
20 . The apparatus according to claim 16 , wherein
the capping layer further contains ruthenium oxide, and the second supply section reduces the ruthenium oxide by supplying at least one of the reducing solution and the oxygen-free solution to decrease ratio of the ruthenium oxide in the capping layer.
21 . The apparatus according to claim 15 , wherein the reflective mask includes a pattern region and a light shielding region provided so as to surround the pattern region, and the capping layer is exposed in the pattern region.
22 . The apparatus according to claim 16 , wherein the reflective mask includes a pattern region and a light shielding region provided so as to surround the pattern region, and the capping layer is exposed in the pattern region.
23 . The apparatus according to claim 16 , wherein the reducing gas contains ammonia or hydrogen.
24 . The apparatus according to claim 15 , wherein the organic solvent is isopropyl alcohol or acetone.
25 . A reflective mask cleaning method comprising:
supplying a first solution containing at least one of an organic solvent and a surfactant to a ruthenium-containing capping layer provided in a reflective mask; and supplying at least one of a reducing solution and an oxygen-free solution to the capping layer.
26 . A reflective mask cleaning method comprising:
supplying a plasma product produced from a reducing gas to a ruthenium-containing capping layer provided in a reflective mask; and supplying at least one of a reducing solution and an oxygen-free solution to the capping layer.
27 . The method according to claim 25 , wherein the supplying a first solution includes supplying the first solution to the reflective mask having a surface to which organic matter is attached.
28 . The method according to claim 26 , wherein the supplying a plasma product produced from a reducing gas includes supplying the plasma product to the reflective mask having a surface to which organic matter is attached.
29 . The method according to claim 25 , wherein the reflective mask includes a pattern region and a light shielding region provided so as to surround the pattern region, and the capping layer is exposed in the pattern region.
30 . The method according to claim 26 , wherein the reflective mask includes a pattern region and a light shielding region provided so as to surround the pattern region, and the capping layer is exposed in the pattern region.
31 . The method according to claim 25 , wherein
the capping layer further contains ruthenium oxide, and the supplying at least one of a reducing solution and an oxygen-free solution includes reducing the ruthenium oxide by supplying at least one of the reducing solution and the oxygen-free solution to decrease ratio of the ruthenium oxide in the capping layer.
32 . The method according to claim 26 , wherein
the capping layer further contains ruthenium oxide, and the supplying at least one of a reducing solution and an oxygen-free solution includes reducing the ruthenium oxide by supplying at least one of the reducing solution and the oxygen-free solution to decrease ratio of the ruthenium oxide in the capping layer.Cited by (0)
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