Semiconductor device

Abstract

A semiconductor device is provided which includes a first fin-type pattern including a first side surface and a second side surface opposite to each other, a first trench of a first depth adjacent to the first side surface, a second trench of a second depth adjacent to the second side surface. The second depth differs from the first depth, and a first field insulating film partially fills the first trench and a second field insulating film partially fills the second trench. The first fin-type pattern has a lower portion, and an upper portion having a narrower width than the lower portion, and has a first stepped portion on a boundary between the upper portion and the lower portion. The first field insulating film includes a first lower field insulating film in contact with the lower portion, and a first upper field insulating film in contact with the upper portion.

1 . A semiconductor device, comprising:
 a first fin-type pattern comprising a first side surface and a second, opposite side surface;   a first trench of a first depth in contact with the first side surface;   a second trench of a second depth in contact with the second side surface, wherein the second depth is different from the first depth;   a first field insulating film partially filling the first trench; and   a second field insulating film partially filling the second trench,   wherein the first fin-type pattern comprises a lower portion, and an upper portion having a narrower width than the lower portion, and has a first stepped portion on a boundary between the upper portion and the lower portion, and   the first field insulating film comprises a first lower field insulating film in contact with the lower portion, and a first upper field insulating film in contact with the upper portion.   
     
     
         2 . The semiconductor device of  claim 1 , wherein a width of the first trench is smaller than a width of the second trench. 
     
     
         3 . The semiconductor device of  claim 1 , wherein the second field insulating film comprises:
 a second lower field insulating film in contact with the lower portion; and   a second upper field insulating film in contact with the upper portion.   
     
     
         4 . The semiconductor device of  claim 1 , wherein a stress characteristic of the first lower field insulating film and a stress characteristic of the first upper field insulating film are different from each other. 
     
     
         5 . The semiconductor device of  claim 1 , wherein the first lower field insulating film has a tensile stress characteristic, and
 the first upper field insulating film has a compressive stress characteristic.   
     
     
         6 . The semiconductor device of  claim 1 , wherein the first fin-type pattern is inclined toward the first side surface. 
     
     
         7 . The semiconductor device of  claim 1 , wherein a stress characteristic of the second field insulating film is same as any one of the first lower field insulating film or the first upper field insulating film. 
     
     
         8 . The semiconductor device of  claim 7 , wherein the second field insulating film has a tensile stress characteristic, and
 the first fin-type pattern is inclined toward the second side surface.   
     
     
         9 . The semiconductor device of  claim 7 , wherein the second field insulating film has a compressive stress characteristic, and
 the first fin-type pattern is inclined toward the first side surface.   
     
     
         10 . The semiconductor device of  claim 1 , wherein the first lower field insulating film and the second upper field insulating film comprise a same material as each other. 
     
     
         11 . (canceled) 
     
     
         12 . The semiconductor device of  claim 1 , wherein the upper portion of the fin-type pattern comprises a first upper portion, and a second upper portion on the first upper portion having a narrower width than the first upper portion, and has a second stepped portion at a boundary between the first upper portion and the second upper portion. 
     
     
         13 . The semiconductor device of  claim 12 , wherein the first field insulating film surrounds the first upper portion, while exposing the second upper portion. 
     
     
         14 . The semiconductor device of  claim 1 , wherein a height of the first stepped portion on the first side surface and a height of the first stepped portion on the second side surface are different from each other. 
     
     
         15 . A semiconductor device, comprising:
 a first fin-type pattern protruding from a substrate and comprising a first side surface and a second side surface opposed to each other, wherein a distance between the substrate and an upper surface of the first fin-type pattern is a first distance;   a second fin-type pattern protruding from the substrate and comprising a third side surface and a fourth side surface opposed to each other, wherein a distance between the substrate and an upper surface of the second fin-type pattern is a second distance;   a first trench being in contact with the first side surface and having a first width and a first depth; and   a second trench being in contact with the second side surface and the third side surface between the first fin-type pattern and the second fin-type pattern, and having a second width and a second depth,   wherein at least one of the first width or the second width, and at least one of the first depth or the second depth are different from each other.   
     
     
         16 . The semiconductor device of  claim 15 , wherein at least one of the first fin-type pattern or the second fin-type pattern is inclined with respect to a vertical direction perpendicular to a surface of the substrate. 
     
     
         17 . The semiconductor device of  claim 15 , wherein the second fin-type pattern is inclined in a direction toward the first fin-type pattern. 
     
     
         18 . The semiconductor device of  claim 17 , further comprising a gate electrode formed on the first fin-type pattern and the second fin-type pattern in a direction of intersecting the first fin-type pattern and the second fin-type pattern. 
     
     
         19 . The semiconductor device of  claim 18 , wherein the gate electrode comprises an end closer to the second fin-type pattern than to the first fin-type pattern. 
     
     
         20 . The semiconductor device of  claim 18 , comprising:
 a first source/drain region formed on the first fin-type pattern and on both sides of the gate electrode; and   a second source/drain region formed on the second fin-type pattern and on both sides of the gate electrode.   
     
     
         21 . A semiconductor device, comprising:
 a first fin-type pattern comprising a first side surface and a second opposite side surface;   a second fin-type pattern comprising a third side surface and a fourth opposite side surface, and inclined toward the third side surface;   a first trench in contact with the first side surface and having a first width and a first depth;   a second trench in contact with the second side surface and the third side surface, respectively, between the first fin-type pattern and the second fin-type pattern, and having a second width and a second depth;   a third trench in contact with the fourth side surface and having a third width and a third depth;   a first field insulating film partially filling the first trench;   a second field insulating layer partially filling the second trench; and   a third field insulating film partially filling the third trench,   wherein the second field insulating film comprises a second lower field insulating film and a second upper field insulating film formed on the second lower field insulating film.   
     
     
         22 - 36 . (canceled)