US2017243840A1PendingUtilityA1

Semiconductor device and method of manufacturing same

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Assignee: RENESAS ELECTRONICS CORPPriority: Aug 26, 2015Filed: May 8, 2017Published: Aug 24, 2017
Est. expiryAug 26, 2035(~9 yrs left)· nominal 20-yr term from priority
Inventors:Hiroaki Sekikawa
H10W 74/47H10W 72/9223H10W 72/5525H10W 72/5522H10W 72/983H10W 72/981H10W 72/952H10W 72/923H10W 72/922H10W 72/541H10W 72/536H10W 72/075H10W 72/59H10W 70/69H10W 70/66H10W 70/65H10W 70/60H10W 70/05H10W 20/425H10W 20/063H10W 20/039H10W 74/147H10W 72/90H10W 72/019H10W 20/498H10W 20/435H10W 20/49H10W 20/43H10W 70/655H10W 70/68H10W 20/40H01L 2224/0235H01L 2924/01046H01L 2924/3511H01L 2224/0239H01L 2224/05124H01L 2224/04042H01L 2224/05008H01L 24/45H01L 2224/024H01L 2224/02331H01L 2224/4502H01L 24/02H01L 2224/45147H01L 2924/35121H01L 2924/01022H01L 2924/01029H01L 24/05H01L 2224/02373H01L 2924/07025
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Claims

Abstract

To provide a semiconductor device having improved reliability. The semiconductor device is equipped with a first polyimide film, rewirings formed over the first polyimide film, first and second dummy patterns formed over the first polyimide film, a second polyimide film that covers the rewirings and the dummy patterns, and an opening portion that exposes a portion of the rewirings in the second polyimide film. The first dummy pattern is, in plan view, comprised of a closed pattern surrounding the rewirings while having a space therebetween.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A semiconductor device, comprising
 a first polyimide film;   a wiring formed over the first polyimide film;   a conductor pattern formed over the first polyimide film;   a second polyimide film that covers the wiring and the conductor pattern; and   an opening portion that exposes a portion of the wiring in the second polyimide film,   wherein, in plan view, the conductor pattern is comprised of a closed pattern surrounding the wiring, while having a space therebetween.

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