Inductor structure and manufacturing method thereof

Abstract

A manufacturing method of an inductor structure includes the following steps. A protection layer is formed on a substrate, such that bond pads of the substrate are respectively exposed form protection layer openings of the protection layer. A conductive layer is formed on the bond pads and the protection layer. A patterned first photoresist layer is formed on the conductive layer. Copper bumps are respectively formed on the conductive layer located in the first photoresist layer openings. A patterned second photoresist layer is formed on the first photoresist layer, such that at least one of the copper bumps is exposed through second photoresist layer opening and the corresponding first photoresist layer opening. A diffusion barrier layer and an oxidation barrier layer are formed on the copper bump. The first and second photoresist layers, and the conductive layer not covered by the copper bumps are removed.

What is claimed is: 
     
         1 . A manufacturing method of an inductor structure comprising:
 (a) providing a substrate having a plurality of bond pads;   (b) forming a protection layer having a plurality of protection layer openings on the substrate and the bond pads, such that the bond pads are respectively exposed through the protection layer openings;   (c) forming a conductive layer on the bond pads and the protection layer;   (d) forming a patterned first photoresist layer on the conductive layer, such that the conductive layer adjacent to the protection layer openings is exposed through a plurality of first photoresist layer openings of the first photoresist layer;   (e) forming a plurality of copper bumps on the conductive layer that is in the first photoresist layer openings;   (f) forming a patterned second photoresist layer on the first photoresist layer, wherein a second photoresist layer opening of the second photoresist layer is aligned with at least one of the copper bumps, such that at least one of the copper bumps is exposed through the second photoresist layer opening and the corresponding first photoresist layer opening;   (g) forming a diffusion barrier layer and an oxidation barrier layer in sequence on the copper bump that is exposed through the second photoresist layer opening; and   (h) removing the first and second photoresist layers, and the conductive layer that is not covered by the copper bumps.   
     
     
         2 . The manufacturing method of the inductor structure of  claim 1 , further comprising:
 forming a nonmetal passivation layer on the protection layer, the copper bumps, the diffusion barrier layer, and the oxidation barrier layer; and   pattering the nonmetal passivation layer, such that the oxidation barrier layer is exposed through a nonmetal passivation layer opening of the nonmetal passivation layer.   
     
     
         3 . The manufacturing method of the inductor structure of  claim 1 , further comprising:
 forming a metal division layer to cover surfaces of the copper bumps, the diffusion barrier layer, and the oxidation barrier layer.   
     
     
         4 . The manufacturing method of the inductor structure of  claim 3 , wherein forming the metal division layer on the surfaces of the copper bumps, the diffusion barrier layer, and the oxidation barrier layer comprises:
 performing a chemical plating treatment to form the metal division layer on the surfaces of the copper bumps, the diffusion barrier layer, and the oxidation barrier layer.   
     
     
         5 . The manufacturing method of the inductor structure of  claim 1 , wherein step (b) comprises:
 patterning the protection layer, such that the protection layer has the protection layer openings.   
     
     
         6 . The manufacturing method of the inductor structure of  claim 1 , wherein step (e) comprises:
 performing an electrolytic deposition treatment to form the copper bumps on the conductive layer that is in the first photoresist layer openings.   
     
     
         7 . The manufacturing method of the inductor structure of  claim 1 , wherein step (g) comprises:
 performing electrolytic deposition treatments to form the diffusion barrier layer and the oxidation barrier layer in sequence on the copper bump that is exposed through the second photoresist layer opening.   
     
     
         8 . The manufacturing method of the inductor structure of  claim 1 , wherein step (h) comprises:
 etching the conductive layer that is not covered by the copper bumps.