Method of producing a semiconductor body

Abstract

A method of producing a semiconductor body includes providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer includes a layer sequence, an outermost layer of which has at least within the separating region a transmissive layer transmissive to electromagnetic radiation, carrying out at least one of removing the transmissive layer within the separating region before starting a separation process with help of a laser, applying an absorbent layer within the separating region, wherein the absorbent layer remains in the separation region during a subsequent separation process with help of a laser, and increasing the absorption coefficient of the transmissive layer within the separating region, and subsequently separating the chip regions along the separating regions by a laser.

What is claimed is: 
     
         1 . A method of producing a semiconductor body comprising:
 providing a semiconductor wafer having at least two chip regions and at least one separating region arranged between the chip regions, wherein the semiconductor wafer comprises a layer sequence, an outermost layer of which has, at least within the separating region a transmissive layer transmissive to electromagnetic radiation, and   carrying out:
 increasing an absorption coefficient of the transmissive layer within the separating region, and 
 subsequently separating the chip regions along the separating regions by a laser. 
   
     
     
         2 . The method according to  claim 1 , wherein the absorption coefficient of the transmissive layer is increased within the separating region by one of: introducing scattering centers into the transmissive layer, implanting dopants into the transmissive layer, and wet-chemical modification. 
     
     
         3 . The method according to  claim 1 , wherein
 the layer sequence has, within the chip regions, an active zone that generates electromagnetic radiation, and   the separating region completely penetrates through the active zone.   
     
     
         4 . The method according to  claim 1 , wherein the transmissive layer is a passivation layer. 
     
     
         5 . The method according to  claim 1 , wherein the transmissive layer comprises one of oxides or nitrides. 
     
     
         6 . The method according to  claim 1 , wherein the thickness of the transmissive layer is 3 nm to 500 nm. 
     
     
         7 . The method according to  claim 1 , wherein the transmissive layer completely covers the side faces of the chip regions. 
     
     
         8 . The method according to  claim 1 , wherein each chip region has an optoelectronic thin-film semiconductor body. 
     
     
         9 . The method according to  claim 1 , wherein the separating region is a sawing trench.