Semiconductor device and method comprising redistribution layers

Abstract

A method of making a semiconductor package can include placing a single layer dielectric film on a temporary carrier substrate. A plurality of semiconductor die can be placed directly on the first surface of the single layer dielectric film. The single layer dielectric film can be cured to lock the plurality of semiconductor die in place on the single layer dielectric film. The plurality of semiconductor die can be encapsulated while directly on the single layer dielectric film with an encapsulant. The single layer dielectric film can be patterned utilizing a mask-less patterning technique to form a via hole after removing the temporary carrier substrate. A conductive layer can be formed directly on, substantially parallel to, and extending across, the second surface of the patterned single layer dielectric film, within the vial hole, and over the plurality of semiconductor die.

What is claimed is: 
     
         1 . A method of making a semiconductor package, comprising:
 placing a single layer dielectric film comprising a first surface and a second surface opposite the first surface directly on a temporary carrier substrate, wherein the first surface and the second surface of the single layer dielectric film are substantially parallel;   placing a plurality of semiconductor die face down directly on the first surface of the single layer dielectric film opposite the second surface of the dielectric film attached to the temporary carrier substrate, wherein the plurality of semiconductor die is disposed over the temporary carrier substrate;   curing the single layer dielectric film after placing the plurality of semiconductor die on the first surface of the single layer dielectric film to lock the plurality of semiconductor die in place on the single layer dielectric film and render the single layer dielectric film non-photoimageable;   encapsulating the plurality of semiconductor die on the cured single layer dielectric film with an encapsulant while the temporary carrier substrate supports the single layer dielectric film and the plurality of semiconductor die;   releasing the temporary carrier substrate from the cured single layer dielectric film after encapsulating the plurality of semiconductor die on the cured single layer dielectric film, and prior to patterning the cured single layer dielectric film;   patterning the cured single layer dielectric film utilizing a mask-less patterning technique to form redistribution layer (RDL) trace pattern openings and to form a via hole that extends from the first surface of the cured single layer dielectric film to the second surface of the cured single layer dielectric film after having removed the temporary carrier substrate;   forming a thick conductive layer comprising a thickness greater than 8 micrometers (μm) that extends over the plurality of semiconductor die and directly contacts the second surface of the patterned cured single layer dielectric film and the via hole, the conductive layer being substantially parallel to, and extending across, the second surface of the patterned cured single layer dielectric film; and   singulating the plurality of semiconductor die by cutting through the encapsulant and the cured single layer dielectric film to form individual packages.   
     
     
         2 . The method of  claim 1 , wherein placing the plurality of semiconductor die on the first surface of the single layer dielectric film comprises placing the plurality of semiconductor die on a surface of a B-stage cured epoxy. 
     
     
         3 . The method of  claim 1 , further comprising using laser ablation to form both the via holes and the RDL trace pattern openings within the single layer dielectric film, the RDL trace pattern openings intersecting with the via holes in the single layer dielectric film in a stair step fashion. 
     
     
         4 . The method of  claim 1 , further comprising:
 applying a photoimageable polymer layer over the patterned cured single layer dielectric film;   forming a plurality of openings in the photoimageable polymer layer using a photolithographic patterning technique; and   cutting through the cured single layer dielectric film and the encapsulant without cutting through the photoimageable polymer layer to singulate the plurality of semiconductor die.   
     
     
         5 . The method of  claim 1 , further comprising forming the thick conductive layer comprising a thickness greater than or equal to 20 μm. 
     
     
         6 . The method of  claim 1 , wherein a composition of the encapsulant is the same as a composition of the dielectric film. 
     
     
         7 . The method of  claim 1 , wherein the single layer dielectric film comprises a thickness in a range of 5-50 micrometers, a glass transition temperature (Tg) in a range of 140-190° C., and further comprises 50-90% of ceramic filler or silica filler by weight. 
     
     
         8 . The method of  claim 1 , further comprising placing an active surface of the plurality of semiconductor die on the first surface of the single layer dielectric film. 
     
     
         9 . A method of making a semiconductor package, comprising:
 placing a single layer dielectric film on temporary carrier substrate, the single layer dielectric film comprising a first surface and a second surface opposite the first surface;   placing a plurality of semiconductor die directly on the first surface of the single layer dielectric film opposite the second surface of the single layer dielectric film attached to the temporary carrier substrate;   curing the single layer dielectric film after placing the plurality of semiconductor die on the first surface of the single layer dielectric film to lock the plurality of semiconductor die in place on the single layer dielectric film;   encapsulating the plurality of semiconductor die directly on the single layer dielectric film with an encapsulant;   patterning the single layer dielectric film utilizing a mask-less patterning technique to form a via hole that extends from the first surface of the cured single layer dielectric film to the second surface of the cured single layer dielectric film after removing the temporary carrier substrate; and   forming a conductive layer directly on, substantially parallel to, and extending across, the second surface of the patterned single layer dielectric film, within the vial hole, and over the plurality of semiconductor die.   
     
     
         10 . The method of  claim 9 , further comprising placing an active surface of the plurality of semiconductor die on the first surface of the single layer dielectric film. 
     
     
         11 . The method of  claim 9 , further comprising:
 laminating the single layer dielectric film to the temporary carrier substrate at a temperature in a range of 100-130° C., wherein the single layer dielectric film comprises a thickness in a range of 5-50 micrometers, a glass transition temperature (Tg) in a range of 140-190° C., and further comprises 50-90% of ceramic filler or silica filler by weight; and   after laminating the single layer dielectric film to the temporary carrier, placing the plurality of semiconductor die directly on the first surface of the single layer dielectric film, and curing the single layer dielectric film at a temperature greater than the glass transition temperature (Tg) of the single layer dielectric film.   
     
     
         12 . The method of  claim 9 , further comprising using laser ablation to form the via hole comprising a first depth and redistribution layer (RDL) trace pattern openings comprising a second depth less than the first depth to intersect with the via hole in the single layer dielectric film. 
     
     
         13 . The method of  claim 9 , further comprising forming the conductive layer as a thick redistributions layer (RDL) trace comprising a thickness greater than or equal to 20 μm. 
     
     
         14 . The method of  claim 9 , further comprising:
 forming the plurality of semiconductor die with thick RDL traces formed while the plurality of semiconductor die is part of a native wafer; and   placing the plurality of semiconductor die directly on the first surface of the single layer dielectric film with the thick RDLs directly contacting the first surface of the single layer dielectric film.   
     
     
         15 . A method of making a semiconductor package, comprising:
 placing a single layer dielectric film on a temporary carrier substrate, the single layer dielectric film comprising a first surface and a second surface opposite the first surface;   placing a plurality of semiconductor die directly on the first surface of the single layer dielectric film with the plurality of semiconductor die disposed over the temporary carrier substrate;   curing the single layer dielectric film after placing the plurality of semiconductor die on the surface of the single layer dielectric film;   encapsulating the plurality of semiconductor die on the single layer dielectric film with an encapsulant while the temporary carrier substrate supports the single layer dielectric film and the plurality of semiconductor die;   patterning the single layer dielectric film and leaving a portion of the single layer dielectric film disposed over an active surface of the plurality of semiconductor die; and   forming a conductive layer directly on, and extending across, the second surface of the patterned single layer dielectric film and over the plurality of semiconductor die.   
     
     
         16 . The method of  claim 15 , wherein a composition of the encapsulant is the same as a composition of the single layer dielectric film. 
     
     
         17 . The method of  claim 15 , further comprising forming a conductive layer directly on a surface of the patterned single layer dielectric film. 
     
     
         18 . The method of  claim 15 , wherein the single layer dielectric film comprises a thickness in a range of 5-50 micrometers, a glass transition temperature (Tg) in a range of 140-190° C., and further comprises 50-90% of ceramic filler or silica filler by weight. 
     
     
         19 . The method of  claim 15 , further comprising using laser ablation to form both vias and a redistribution layer trace pattern openings in within the single layer dielectric film, the RDL trace pattern intersecting with the vias in the single layer dielectric film in a stair step fashion. 
     
     
         20 . The method of  claim 15 , wherein the conductive layer comprises a thick redistribution layer comprising a thickness greater than or equal to 20 μm.