Designed asperity contactors, including nanospikes, for semiconductor test, and associated systems and methods

Abstract

Nanospike contactors suitable for semiconductor device test, and associated systems and methods are disclosed. A representative apparatus includes a package having a wafer side positioned to face toward a device under test and an inquiry side facing away from the wafer side. A plurality of wafer side sites are carried at the wafer side of the package. The nanospikes can be attached to nanospike sites on a wafer side of the package. Because of their small size, multiple nanospikes make contact with a single pad/solderball on the semiconductor device. In some embodiments, after detecting that the device under test passes the test, the device under the test can be packaged to create a known good die in a package.

1 - 25 . (canceled) 
     
     
         26 . An apparatus for testing semiconductor dies, comprising:
 a translator having a wafer side positioned to face toward a device under test, and an inquiry side facing away from the wafer side;   a plurality of wafer-side sites carried by the translator at the wafer side of the translator; and   a plurality of nanospikes carried by at least one wafer-side site.   
     
     
         27 . The apparatus of  claim 26 , wherein the nanospikes are made of a material selected from a group consisting of tantalum nitride, tungsten carbide, hafnium carbide, titanium carbide, titanium diboride, molybdenum carbide, rhenium diboride, and a combination thereof. 
     
     
         28 . The apparatus of  claim 26 , wherein a cross-section of the nanospikes is selected from a group consisting of generally concave, triangular, convex, and a combination thereof. 
     
     
         29 . The apparatus of  claim 26 , wherein a shape of the nanospikes is selected from a group consisting of a star, a blade, a cross, a spike, and a combination thereof. 
     
     
         30 . The apparatus of  claim 26 , wherein the nanospikes comprise a cover material. 
     
     
         31 . The apparatus of  claim 26 , wherein the nanospikes are approximately 0.3-2 μm long. 
     
     
         32 . The apparatus of  claim 26 , wherein the nanospikes are arranged in a grid with a spacing of approximately 0.3-2 μm from one nanospike to another. 
     
     
         33 . The apparatus of  claim 26 , wherein the nanospikes are generally perpendicular to the at least one wafer-side contact pad. 
     
     
         34 . The apparatus of  claim 26 , further comprising:
 a plurality of inquiry side contact sites on the inquiry side of the translator; and   an interposer having a plurality of interposer contacts in electrical contact with the inquiry side contact sites.   
     
     
         35 . The apparatus of  claim 34 , further comprising:
 a device interface board aligned with the interposer and in electrical contact with the interposer.   
     
     
         36 . The apparatus of  claim 34 , wherein the inquiry side contact sites of the translator are larger than the contact sites at the wafer-side of the translator. 
     
     
         37 . A method for manufacturing a translator having a wafer side configured to face toward a device under test, and an inquiry side facing away from the wafer side, comprising:
 applying a photoresist material over a first surface of a metal carrier;   patterning the photoresist material to create apertures exposing portions of the first surface of the metal carrier;   disposing nanospike material in the apertures of the photoresist material to form the nano spikes;   removing the photoresist material, at least in part, from the first surface of the metal carrier; and   attaching the nanospikes to the wafer side of the translator.   
     
     
         38 . The method of  claim 37 , further comprising thinning the metal carrier by removing a portion of the metal carrier facing away from the nanospikes. 
     
     
         39 . The method of  claim 37 , further comprising rotating the metal carrier to shape the nanospikes by controlling the disposing of the nanospike material in the apertures of the photoresist material. 
     
     
         40 . The method of  claim 37 , wherein the nanospikes include a material selected from a group consisting of tantalum nitride, tungsten carbide, hafnium carbide, titanium carbide, titanium diboride, molybdenum carbide, alumina, rhenium diboride, and a combination thereof. 
     
     
         41 . The method of  claim 37 , wherein the apertures in the photoresist materials have a shape selected from a group consisting of a circle, a star, a blade, and a combination thereof. 
     
     
         42 . The method of  claim 37 , wherein attaching the nanospikes to the wafer-side of the translator comprises attaching the nano spikes carried by the metal carrier. 
     
     
         43 . The method of  claim 37 , further comprising separating the nanospikes from the metal carrier prior to attaching the nanospikes to the wafer-side of the translator. 
     
     
         44 . The method of  claim 37 , further comprising:
 applying an intermediate material over wafer-side contact sites on the translator; and   distributing the nanospikes over the intermediate material of the wafer-side contact pad, wherein joining the nanospikes with a wafer-side contact pad includes heating the nanospikes, the wafer-side contact pad, or both.