Plasma etching apparatus and method of manufacturing a semiconductor device using the same

Abstract

Disclosed are a plasma etching apparatus and a method of manufacturing semiconductor devices using the same. The plasma etching apparatus includes a process chamber. A source supplier is positioned at an upper portion of the process chamber. The source supplier is configured to supply source gases for an etching process. A substrate holder is positioned at a lower portion of the process chamber opposite to the source supplier. The substrate holder is configured to support a substrate. A first power source is configured to apply a high frequency power to capacitively couple the source gases into a capacitively coupled plasma (CCP) in the process chamber. A second power source is configured to apply a low frequency pulse power at a low duty ratio of less than or equal to about 0.5:1. The low frequency pulse power is configured to guide the CCP toward the substrate supported by the substrate holder.

What is claimed is: 
     
         1 . A plasma etching apparatus comprising:
 a process chamber;   a source supplier positioned at an upper portion of the process chamber, wherein the source supplier is configured to supply source gases for an etching process into the process chamber;   a substrate holder positioned at a lower portion of the process chamber opposite to the source supplier, wherein the substrate holder is configured to support a substrate;   a first power source configured to apply a high frequency power to capacitively couple the source gases into a capacitively coupled plasma (CCP) in the process chamber; and   a second power source configured to apply a low frequency pulse power at a low duty ratio of less than or equal to about 0.5:1, wherein the low frequency pulse power is configured to guide the CCP toward the substrate supported by the substrate holder.   
     
     
         2 . The plasma etching apparatus of  claim 1 , wherein the high frequency power is applied to the source supplier and the low frequency power is applied to the substrate holder. 
     
     
         3 . The plasma etching apparatus of  claim 2 , wherein the second power source includes a power generator configured to generate the low frequency power as a pulse type power. 
     
     
         4 . The plasma etching apparatus of  claim 3 , wherein the low frequency power includes a radio frequency (RF) power having a frequency of from about 1 MHz to about 10 MHz and an electric power of from about 20 KW to about 100 KW at a low duty ratio of from about 0.01:1 to about 0.5:1. 
     
     
         5 . The plasma etching apparatus of  claim 4 , wherein the low frequency power includes a ramped power in which an electric power increases from a minimal power to a maximal power. 
     
     
         6 . The plasma etching apparatus of  claim 2 , wherein the second power source includes a high power source having a high power generator configured to generate a high-powered low frequency pulse power and a low power source having a low power generator configured to generate a low-powered low frequency power, and wherein an electric power of the high-powered low frequency pulse power is greater than that of the low-powered low frequency power. 
     
     
         7 . The plasma etching apparatus of  claim 6 , wherein the high-powered low frequency pulse power has an electric power of from about 20 KW to about 100 KW and a frequency of from about 1 MHz to about 10 MHz at a low duty ratio of from about 0.01:1 to about 0.5:1, and wherein the low-powered low frequency power includes a pulse power having an electric power of from about 5 KW to about 15 KW and a frequency of from about 1 MHz to about 10 MHz at a high duty ratio of from about 0.6:1 to about 1.2:1. 
     
     
         8 . The plasma etching apparatus of  claim 6 , wherein the high-powered low frequency pulse power has an electric power of from about 20 KW to about 100 KW and a frequency of from about 1 MHz to about 10 MHz at a low duty ratio of from about 0.01:1 to about 0.5:1, and wherein the low-powered low frequency power includes a continuous power having an electric power of from about 5 KW to about 15 KW. 
     
     
         9 . The plasma etching apparatus of  claim 6 , further comprising a controller configured to control the second power source such that the low power generator is operated and the low-powered low frequency power is generated during a first half portion of the etching process, wherein the low power generator is stopped and the high power generator is operated and the high-powered low frequency power is generated in place of the low-powered low frequency power during a second half portion of the etching process. 
     
     
         10 . The plasma etching apparatus of  claim 9 , wherein an etching depth etched during the first half portion of the etching process is smaller than a preset depth of the etching process and an etching depth etched during the second half portion of the etching process is greater than the preset depth of the etching process. 
     
     
         11 . A method of manufacturing semiconductor devices, comprising:
 positioning a substrate having a layered structure on a substrate holder in a process chamber;   supplying source gases for an etching process into the process chamber;   generating a capacitively coupled plasma (CCP) of the source gases in the process chamber;   guiding the CCP onto the substrate by applying a low frequency power at a low duty ratio less than or equal to about 0.5:1; and   etching the layered structure in the process chamber using the CCP.   
     
     
         12 . The method of  claim 11 , wherein the low-frequency power includes a radio frequency (RF) power having a frequency of from about 1 MHz to about 10 MHz and a power of from about 20 KW to about 100 KW at a low duty ratio of from about 0.01:1 to about 0.5:1. 
     
     
         13 . The method of  claim 11 , wherein applying the low-frequency power to the CCP includes:
 applying a low-powered low-frequency pulsed power to the CCP at a high duty ratio of from about 0.6:1 to about 1.2:1 in an electric power range of from about 5 KW to about 15 KW; and   applying a high-powered low-frequency pulsed power to the CCP at a low duty ratio of from about 0.01:1 to about 0.5:1 in an electric power range of from about 20 KW to about 100 KW and a wavelength range of from about 1 MHz to about 10 MHz.   
     
     
         14 . The method of  claim 11 , wherein applying the low-frequency power to the CCP includes:
 applying a low-powered low-frequency continuous power to the CCP in an electric power range of from about 5 KW to about 15 KW; and   applying a high-powered low-frequency pulsed power to the CCP at a low duty ratio of from about 0.01:1 to about 0.5:1 in an electric power range of from about 20 KW to about 100 KW and a wavelength range of from about 1 MHz to about 10 MHz.   
     
     
         15 . The method of  claim 11 , wherein the layered structure on the substrate includes a pattern structure comprising a hole, and wherein the hole has an aspect ratio of from about 50:1 to about 100:1. 
     
     
         16 . A plasma etching apparatus comprising:
 a process chamber;   a substrate holder positioned in the process chamber and configured to support a substrate;   a source supplier positioned in the process chamber, wherein the source supplier is configured to supply at least one source gas;   at least one first power source, wherein the at least one first power source is configured to apply a power converting the at least one source gas into a capacitively coupled plasma (CCP); and   at least one second power source, wherein the at least one second power source is configured to apply a bias power having an electric power of from about 20 KW to about 100 KW and a duty ratio of from about 0.01:1 to about 0.5:1 to the CCP.   
     
     
         17 . The plasma etching apparatus of  claim 16 , wherein the electric power includes a radio frequency (RF) power having a frequency of from about 1 MHz to about 10 MHz. 
     
     
         18 . The plasma etching apparatus of  claim 16 , further comprising a source reservoir coupled to a controller, and a source tube connecting the source reservoir to the process chamber. 
     
     
         19 . The plasma etching apparatus of  claim 16 , wherein the substrate comprises a layered structure formed on the substrate; 
     
     
         20 . The plasma etching apparatus of  claim 19 , wherein the layered structure comprises a contact hole or a via structure having an aspect ratio of from about 50:1 to about 100:1.