Semiconductor device and a method for forming a semiconductor device

Abstract

A method for forming a semiconductor device comprises forming an insulation trench structure comprising insulation material extending into the semiconductor substrate from a surface of the semiconductor substrate. The insulation trench structure laterally surrounds a portion of the semiconductor substrate. The method further comprises modifying the laterally surrounded portion of the semiconductor substrate to form a vertical electrically conductive structure comprising an alloy material. The alloy material is an alloy of the semiconductor substrate material and at least one metal.

1 - 16 . (canceled) 
     
     
         17 . A semiconductor device, comprising:
 a vertical electrically conductive structure extending from a first surface of a semiconductor substrate to a second surface of the semiconductor substrate;   wherein the vertical electrically conductive structure comprises an alloy material of a metal and a semiconductor substrate material of the semiconductor substrate,   wherein an atomic percentage content of the semiconductor substrate material is greater than 30% of the alloy material.   
     
     
         18 . The semiconductor device according to  claim 17 , wherein the at least one metal comprises at least one material selected from the group of materials comprising gold, aluminum, platinum and titanium. 
     
     
         19 . The semiconductor device according to  claim 17 , wherein an insulation material is located between the semiconductor substrate and the vertical electrically conductive structure. 
     
     
         20 . The semiconductor device according to  claim 17 , wherein a vertical height of the vertical electrically conductive structure is at least 30 μm. 
     
     
         21 . The semiconductor device according to  claim 17 , wherein a minimum lateral dimension of the vertical electrically conductive structure is at least 500 nm.