Method for manufacturing high photoelectric conversion efficiency solar cell and high photoelectric conversion efficiency solar cell

Abstract

The present invention provides a method for manufacturing a solar cell including: preparing a semiconductor silicon substrate which has an electrode, which is formed by baking an electrode precursor on at least one main surface, has a PN junction, and is less than 100° C.; and performing an annealing treatment to the semiconductor silicon substrate at 100° C. or more and 450° C. or less. Consequently, there is provided the method for manufacturing a solar cell which suppresses a degradation phenomenon that an output of the solar cell is lowered when the solar cell is left as it stands at a room temperature in the atmosphere.

1 - 14 . (canceled) 
     
     
         15 . A method for manufacturing a solar cell comprising:
 preparing a semiconductor silicon substrate which has an electrode, which is formed by baking an electrode precursor on at least one main surface, has a PN junction, and is less than 100° C.; and   performing an annealing treatment to the semiconductor silicon substrate at 100° C. or more and 450° C. or less.   
     
     
         16 . The method for manufacturing a solar cell according to  claim 15 ,
 wherein the annealing treatment is performed for a time of 0.5 minute or more.   
     
     
         17 . The method for manufacturing a solar cell according to  claim 15 ,
 wherein, in the baking of the electrode precursor, a temperature drop rate from a maximum temperature to 450° C. is set to 50° C./second or more.   
     
     
         18 . The method for manufacturing a solar cell according to  claim 16 ,
 wherein, in the baking of the electrode precursor, a temperature drop rate from a maximum temperature to 450° C. is set to 50° C./second or more.   
     
     
         19 . The method for manufacturing a solar cell according to  claim 15 ,
 wherein the maximum temperature in the baking of the electrode precursor is set to 500° C. or more and 1100° C. or less.   
     
     
         20 . The method for manufacturing a solar cell according to  claim 15 ,
 wherein, after preparing the semiconductor silicon substrate, a low-temperature curing conductive material, which is curable in a range of 100° C. or more and 450° C. or less, is applied to the main surface of the semiconductor substrate in a pattern shape, and   then, at the time of performing the annealing treatment, the low-temperature curing conductive material is cured at the same time to form a conductor section.   
     
     
         21 . The method for manufacturing a solar cell according to  claim 17 ,
 wherein, after preparing the semiconductor silicon substrate, a low-temperature curing conductive material, which is curable in a range of 100° C. or more and 450° C. or less, is applied to the main surface of the semiconductor substrate in a pattern shape, and   then, at the time of performing the annealing treatment, the low-temperature curing conductive material is cured at the same time to form a conductor section.   
     
     
         22 . The method for manufacturing a solar cell according to  claim 15 ,
 wherein, after preparing the semiconductor silicon substrate, an insulating material, which is curable in a range of 100° C. or more and 450° C. or less, is applied to the main surface of the semiconductor silicon substrate in a pattern shape, and   then, at the time of performing the annealing treatment, the insulating material is cured at the same time to form an insulator film.   
     
     
         23 . The method for manufacturing a solar cell according to  claim 17 ,
 wherein, after preparing the semiconductor silicon substrate, an insulating material, which is curable in a range of 100° C. or more and 450° C. or less, is applied to the main surface of the semiconductor silicon substrate in a pattern shape, and   then, at the time of performing the annealing treatment, the insulating material is cured at the same time to form an insulator film.   
     
     
         24 . The method for manufacturing a solar cell according to  claim 20 ,
 wherein, after preparing the semiconductor silicon substrate, an insulating material, which is curable in a range of 100° C. or more and 450° C. or less, is applied to the main surface of the semiconductor silicon substrate in a pattern shape, and   then, at the time of performing the annealing treatment, the insulating material is cured at the same time to form an insulator film.   
     
     
         25 . The method for manufacturing a solar cell according to  claim 21 ,
 wherein, after preparing the semiconductor silicon substrate, an insulating material, which is curable in a range of 100° C. or more and 450° C. or less, is applied to the main surface of the semiconductor silicon substrate in a pattern shape, and   then, at the time of performing the annealing treatment, the insulating material is cured at the same time to form an insulator film.   
     
     
         26 . The method for manufacturing a solar cell according to  claim 15 ,
 wherein the semiconductor silicon substrate is an N-type semiconductor silicon substrate.   
     
     
         27 . A solar cell comprising a semiconductor silicon substrate which has an electrode formed by baking an electrode precursor on at least one main surface, has a PN junction, and is less than 100° C., the semiconductor silicon substrate being subjected to an annealing treatment at 100° C. or more and 450° C. or less. 
     
     
         28 . A solar cell according to  claim 27 ,
 wherein a value A of an initial short-circuit current measured within one day after the annealing treatment and a value B of a short-circuit current measured after storing the solar cell at a room temperature for one week from the measurement of the initial short-circuit current meet a relationship of B/A≥0.98.   
     
     
         29 . A photovoltaic module comprising the solar cell according to  claim 27  built-in. 
     
     
         30 . A photovoltaic power generation system comprising the photovoltaic module according to  claim 29 . 
     
     
         31 . A solar cell manufacturing apparatus comprising:
 a baking furnace in which a semiconductor silicon substrate having an electrode precursor formed on at least one main surface is heated, and then the electrode precursor is baked to form an electrode on the semiconductor silicon substrate by decreasing a temperature to be less than 100° C.; and   an annealing furnace in which the semiconductor silicon substrate treated with the use of the baking furnace is annealed at 100° C. or more and 450° C. or less.   
     
     
         32 . The solar cell manufacturing apparatus according to  claim 31 ,
 wherein the baking furnace is mechanically connected to the annealing furnace, and the semiconductor silicon substrate carried out of the baking furnace is automatically accommodated in the annealing furnace.   
     
     
         33 . A solar cell comprising a semiconductor silicon substrate having a PN junction, and an electrode formed by baking an electrode precursor on at least one main surface of the semiconductor silicon substrate,
 wherein a value A of an initial short-circuit current measured within one day after completion of the solar cell and a value B of a short-circuit current measured after storing the solar cell at a room temperature for one week from the measurement of the initial short-circuit meet a relationship of B/A≥0.98.