Method of manufacturing semiconductor device

Abstract

To provide a semiconductor device capable of having improved adhesion between a plating film and a wiring layer. A method of manufacturing the semiconductor device includes a step of forming a wiring layer having a surface covered with an oxide film, a step of removing a portion of the oxide film by dry etching to form, in the oxide film, a first opening f exposing a portion of the wiring layer, a step of forming a passivation film covering the wiring layer, is provided with a second opening communicated with the first opening, and is made of an insulating resin material, and a step of growing a plating film on the wiring layer exposed from the first and second openings.

What is claimed is: 
     
         1 . A method of manufacturing a semiconductor device comprising:
 forming a wiring layer having a surface covered with an oxide film over a semiconductor substrate;   removing a portion of the oxide film by dry etching to form, in the oxide film, a first opening for exposing a portion of the wiring layer;   forming a passivation film covering the wiring layer, provided with a second opening communicated with the first opening, and comprising an insulating resin material; and   growing a plating film over the wiring layer exposed from the first opening and the second opening.   
     
     
         2 . The method of manufacturing a semiconductor device according to  claim 1 ,
 wherein the resin material is photosensitive, and   wherein the second opening is formed by photolithography.   
     
     
         3 . The method of manufacturing a semiconductor device according to  claim 2 ,
 wherein the resin material is a polyimide.   
     
     
         4 . The method of manufacturing a semiconductor device according to  claim 1 ,
 wherein the wiring layer is formed by sputtering at a temperature of 150° C. or more.   
     
     
         5 . The method of manufacturing a semiconductor device according to  claim 4 , further comprising:
 forming an interlayer insulating film provided with a contact hole over the semiconductor substrate; and   forming, in the contact hole, a contact plug electrically coupling the wiring layer to the semiconductor substrate,   wherein the forming the contact plug comprises removing a contact plug configuring material protruded from the contact hole.   
     
     
         6 . The method of manufacturing a semiconductor device according to  claim 5 ,
 wherein the removing a contact plug configuring material protruded from the contact hole is performed by etch back.   
     
     
         7 . The method of manufacturing a semiconductor device according to  claim 4 ,
 wherein a proportion, in crystal grains at the surface of the wiring layer, of those having crystal orientation deviated by 5° or less from a <111> plane is 40% or more.   
     
     
         8 . The method of manufacturing a semiconductor device according to  claim 4 ,
 wherein the dry etching is performed for 20 minutes or more to 40 minutes or less.   
     
     
         9 . The method of manufacturing a semiconductor device according to  claim 1 ,
 wherein a proportion, in crystal grains at the surface of the wiring layer, of those having crystal orientation deviated by 5° or less from a <111> plane is 70% or more.   
     
     
         10 . The method of manufacturing a semiconductor device according to  claim 1 ,
 wherein the wiring layer has a thickness of 1 μm or more.   
     
     
         11 . The method of manufacturing a semiconductor device according to  claim 1 ,
 wherein the plating film is an electroless plating film.   
     
     
         12 . The method of manufacturing a semiconductor device according to  claim 1 ,
 wherein the plating film is an electroless nickel plating film.   
     
     
         13 . The method of manufacturing a semiconductor device according to  claim 1 ,
 wherein the first opening is formed by etching with an insulating film comprised of an inorganic material as a mask.