Semiconductor Device

Abstract

A semiconductor device includes a semiconductor layer of a first conductivity type and a semiconductor layer of a second conductivity type formed thereon. The semiconductor device also includes a body layer extending a first predetermined distance into the semiconductor layer of the second conductivity type and a pair of trenches extending a second predetermined distance into the semiconductor layer of the second conductivity type. Each of the pair of trenches consists essentially of a dielectric material disposed therein and a concentration of doping impurities present in the semiconductor layer of the second conductivity type and a distance between the pair of trenches define an electrical characteristic of the semiconductor device. The semiconductor device further includes a control gate coupled to the semiconductor layer of the second conductivity type and a source region coupled to the semiconductor layer of the second conductivity type.

1 . A semiconductor device comprising:
 a semiconductor layer of a first conductivity type;   a semiconductor layer of a second conductivity type formed on the semiconductor layer of the first conductivity type, wherein the semiconductor layer of the second conductivity type is characterized by a first thickness;   a body layer extending a first predetermined distance into the semiconductor layer of the second conductivity type;   a pair of trenches extending a second predetermined distance into the semiconductor layer of the second conductivity type, wherein each of the pair of trenches is characterized by a width and consists essentially of a dielectric material disposed therein, wherein a concentration of doping impurities present in the semiconductor layer of the second conductivity type and a distance between the pair of trenches define an electrical characteristic of the semiconductor device that is independent of the width of each of the pair of trenches;   a control gate coupled to the semiconductor layer of the second conductivity type; and   a source region coupled to the semiconductor layer of the second conductivity type.   
     
     
         2 . The semiconductor device of  claim 1  wherein the electrical characteristic of the semiconductor device comprises a breakdown voltage. 
     
     
         3 . The semiconductor device of  claim 1  wherein an integrated charge density of a dopant measured along a line perpendicular to the first thickness between the pair of trenches ranges from about q*1×10 12 /cm 2  to about q*5×10 12 /cm 2 . 
     
     
         4 . A semiconductor device comprising:
 a semiconductor layer of a first conductivity type;   a semiconductor layer of a second conductivity type formed on the semiconductor layer of the first conductivity type, wherein the semiconductor layer of the second conductivity type is characterized by a first thickness;   a body layer extending a first predetermined distance into the semiconductor layer of the second conductivity type;   a pair of trenches extending a second predetermined distance into the semiconductor layer of the second conductivity type, wherein each of the pair of trenches is characterized by a width and consists essentially of a dielectric material disposed therein, wherein a concentration of doping impurities present in the semiconductor layer of the second conductivity type and a distance between the pair of trenches define an electrical characteristic of the semiconductor device that is independent of the width of each of the pair of trenches;   a control gate coupled to the semiconductor layer of the second conductivity type; and   a source region coupled to the semiconductor layer of the second conductivity type;   wherein the control gate comprises a control gate trench extending a third predetermined distance toward the semiconductor layer of the first conductivity type.   
     
     
         5 . The semiconductor device of  claim 4  wherein the control gate trench further comprises a polysilicon material disposed interior to the dielectric material. 
     
     
         6 . The semiconductor device of  claim 4  wherein the pair of trenches further comprises a second material disposed interior to the dielectric material. 
     
     
         7 . The semiconductor device of  claim 6  wherein the second material comprises aluminum fluoride. 
     
     
         8 . The semiconductor device of  claim 6  further comprising a second dielectric material disposed interior to the second material. 
     
     
         9 . The semiconductor device of  claim 8  wherein the dielectric material and the second dielectric material are a same material. 
     
     
         10 . The semiconductor device of  claim 4  wherein a thickness of the dielectric material measured along the third predetermined distance is greater than a thickness of the dielectric material measured perpendicular to the third predetermined distance. 
     
     
         11 . The semiconductor device of  claim 4  wherein the second predetermined distance and the third predetermined distance are substantially equal. 
     
     
         12 . The semiconductor device of  claim 1  wherein the control gate comprises a gate material disposed as a planar structure on the semiconductor layer of the second conductivity type. 
     
     
         13 . The semiconductor device of  claim 1  wherein the second predetermined distance extends to the semiconductor layer of the first conductivity type. 
     
     
         14 . The semiconductor device of  claim 1  wherein a diffused region is formed adjacent to the pair of trenches and extends farther than the first predetermined distance. 
     
     
         15 . The semiconductor device of  claim 1  wherein the dielectric material comprises a silicon oxide material. 
     
     
         16 . The semiconductor device of  claim 1  wherein the first conductivity type and the second conductivity type are a same conductivity type. 
     
     
         17 . The semiconductor device of  claim 1  further comprising a third dielectric material disposed on the pair of trenches. 
     
     
         18 . The semiconductor device of  claim 1  further comprising at least one termination trench extending through the body layer and the semiconductor layer of the second conductivity type. 
     
     
         19 - 25 . (canceled) 
     
     
         26 . A semiconductor device comprising:
 a semiconductor layer of a first conductivity type; a semiconductor layer of a second conductivity type formed on the semiconductor layer of the first conductivity type, wherein the semiconductor layer of the second conductivity type is characterized by a first thickness;   a body layer extending a first predetermined distance into the semiconductor layer of the second conductivity type;   a plurality of trenches extending a second predetermined distance into the semiconductor layer of the second conductivity type, wherein each of the plurality of trenches comprises a first dielectric material disposed therein, the first dielectric material including an intentionally introduced charge;   a plurality of control gates coupled to the semiconductor layer of the second conductivity type; and   a plurality of source regions coupled to the semiconductor layer of the second conductivity type;   wherein the intentionally introduced charge comprises a net positive charge associated with cesium ions.   
     
     
         27 - 37 . (canceled)