Assignee
MAXPOWER SEMICONDUCTOR INC
US·64 granted patents·21 pending applications·373 citations·filing 2007–2025
Top patents by PatentIndex Score
85 records- 0198US7964913B2Power MOS transistor incorporating fixed charges that balance the charge in the drift regionMAXPOWER SEMICONDUCTOR INC·Filed 2008·Granted Jun 21, 2011·56 cites·22 claims
- 0298US7843004B2Power MOSFET with recessed field plateMAXPOWER SEMICONDUCTOR INC·Filed 2007·Granted Nov 30, 2010·56 cites·27 claims
- 0397US9093522B1Vertical power MOSFET with planar channel and vertical field plateMAXPOWER SEMICONDUCTOR INC·Filed 2014·Granted Jul 28, 2015·60 cites·24 claims
- 0495US9852910B2Vertical power transistor with dual buffer regionsMAXPOWER SEMICONDUCTOR INC·Filed 2017·Granted Dec 26, 2017·7 cites·13 claims
- 0595US8354711B2Power MOSFET and its edge terminationMAXPOWER SEMICONDUCTOR INC·Filed 2010·Granted Jan 15, 2013·23 cites·20 claims
- 0694US9024379B2Trench transistors and methods with low-voltage-drop shunt to body diodeMAXPOWER SEMICONDUCTOR INC·Filed 2013·Granted May 5, 2015·11 cites·20 claims
- 0793US8344451B2Semiconductor deviceMAXPOWER SEMICONDUCTOR INC·Filed 2008·Granted Jan 1, 2013·11 cites·9 claims
- 0893US7910439B2Super self-aligned trench MOSFET devices, methods, and systemsMAXPOWER SEMICONDUCTOR INC·Filed 2009·Granted Mar 22, 2011·27 cites·20 claims
- 0991US9825128B2Vertical power transistor with thin bottom emitter layer and dopants implanted in trenches in shield area and termination ringsMAXPOWER SEMICONDUCTOR INC·Filed 2016·Granted Nov 21, 2017·4 cites·10 claims
- 1089US11316021B2High density power device with selectively shielded recessed field plateMAXPOWER SEMICONDUCTOR INC·Filed 2020·Granted Apr 26, 2022·2 cites·17 claims
- 1189US9842917B2Methods of operating power semiconductor devices and structuresMAXPOWER SEMICONDUCTOR INC·Filed 2016·Granted Dec 12, 2017·4 cites·20 claims
- 1289US9761702B2Power MOSFET having planar channel, vertical current path, and top drain electrodeMAXPOWER SEMICONDUCTOR INC·Filed 2016·Granted Sep 12, 2017·6 cites·20 claims
- 1389US9461127B2Vertical power MOSFET having planar channel and its method of fabricationMAXPOWER SEMICONDUCTOR INC·Filed 2015·Granted Oct 4, 2016·6 cites·32 claims
- 1489US7989293B2Trench device structure and fabricationMAXPOWER SEMICONDUCTOR INC·Filed 2009·Granted Aug 2, 2011·13 cites·13 claims
- 1588US10720511B2Trench transistors and methods with low-voltage-drop shunt to body diodeMAXPOWER SEMICONDUCTOR INC·Filed 2018·Granted Jul 21, 2020·2 cites·20 claims
- 1688US9224855B2Trench gated power device with multiple trench width and its fabrication processMAXPOWER SEMICONDUCTOR INC·Filed 2014·Granted Dec 29, 2015·7 cites·9 claims
- 1788US9184248B2Vertical power MOSFET having planar channel and its method of fabricationMAXPOWER SEMICONDUCTOR INC·Filed 2015·Granted Nov 10, 2015·6 cites·21 claims
- 1888US7923804B2Edge termination with improved breakdown voltageMAXPOWER SEMICONDUCTOR INC·Filed 2009·Granted Apr 12, 2011·13 cites·20 claims
- 1985US9978831B2Vertical power transistor with termination area having doped trenches with variable pitchesMAXPOWER SEMICONDUCTOR INC·Filed 2017·Granted May 22, 2018·2 cites·16 claims
- 2085US8378416B2MOS-gated power devices, methods, and integrated circuitsMAXPOWER SEMICONDUCTOR INC·Filed 2009·Granted Feb 19, 2013·7 cites·23 claims
- 2184US9859400B2Trench transistors and methods with low-voltage-drop shunt to body diodeMAXPOWER SEMICONDUCTOR INC·Filed 2015·Granted Jan 2, 2018·2 cites·20 claims
- 2284US7960783B2Devices containing permanent chargeMAXPOWER SEMICONDUCTOR INC·Filed 2009·Granted Jun 14, 2011·14 cites·19 claims
- 2383US9076861B2Schottky and MOSFET+Schottky structures, devices, and methodsMAXPOWER SEMICONDUCTOR INC·Filed 2014·Granted Jul 7, 2015·5 cites·19 claims
- 2483US8907412B2Semiconductor deviceMAXPOWER SEMICONDUCTOR INC·Filed 2013·Granted Dec 9, 2014·2 cites·17 claims
- 2582US10157983B2Vertical power MOS-gated device with high dopant concentration N-well below P-well and with floating P-islandsMAXPOWER SEMICONDUCTOR INC·Filed 2018·Granted Dec 18, 2018·4 cites·20 claims
- 2682US9419085B2Lateral devices containing permanent chargeMAXPOWER SEMICONDUCTOR INC·Filed 2015·Granted Aug 16, 2016·2 cites·18 claims
- 2781US10720510B2Lateral transistors and methods with low-voltage-drop shunt to body diodeMAXPOWER SEMICONDUCTOR INC·Filed 2018·Granted Jul 21, 2020·1 cites·10 claims
- 2881US10128353B2Trench transistors and methods with low-voltage-drop shunt to body diodeMAXPOWER SEMICONDUCTOR INC·Filed 2017·Granted Nov 13, 2018·1 cites·12 claims
- 2978US10396150B2Vertical power transistor die with etched beveled edges for increasing breakdown voltageMAXPOWER SEMICONDUCTOR INC·Filed 2017·Granted Aug 27, 2019·1 cites·8 claims
- 3078US10325980B2Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent chargesMAXPOWER SEMICONDUCTOR INC·Filed 2018·Granted Jun 18, 2019·1 cites·20 claims
- 3178US9947779B2Power MOSFET having lateral channel, vertical current path, and P-region under gate for increasing breakdown voltageMAXPOWER SEMICONDUCTOR INC·Filed 2017·Granted Apr 17, 2018·2 cites·16 claims
- 3277US8946769B2Lateral devices containing permanent chargeMAXPOWER SEMICONDUCTOR INC·Filed 2014·Granted Feb 3, 2015·2 cites·20 claims
- 3376US11888047B2Lateral transistors and methods with low-voltage-drop shunt to body diodeMAXPOWER SEMICONDUCTOR INC·Filed 2020·Granted Jan 30, 2024·0 cites·19 claims
- 3476US8847307B2Power semiconductor devices, methods, and structures with embedded dielectric layers containing permanent chargesMAXPOWER SEMICONDUCTOR INC·Filed 2012·Granted Sep 30, 2014·2 cites·19 claims
- 3575US7911021B2Edge termination for semiconductor devicesMAXPOWER SEMICONDUCTOR INC·Filed 2009·Granted Mar 22, 2011·5 cites·19 claims
- 3673US9048118B2Lateral transistors with low-voltage-drop shunt to body diodeMAXPOWER SEMICONDUCTOR INC·Filed 2013·Granted Jun 2, 2015·1 cites·18 claims
- 3771US10593813B2Vertical rectifier with added intermediate regionMAXPOWER SEMICONDUCTOR INC·Filed 2018·Granted Mar 17, 2020·1 cites·17 claims
- 3871US9419084B2Devices, components and methods combining trench field plates with immobile electrostatic chargeMAXPOWER SEMICONDUCTOR INC·Filed 2015·Granted Aug 16, 2016·1 cites·5 claims
- 3970US9812548B2Power device having a polysilicon-filled trench with a tapered oxide thicknessMAXPOWER SEMICONDUCTOR INC·Filed 2016·Granted Nov 7, 2017·1 cites·18 claims
- 4068US9385227B2Power devices, structures, components, and methods using lateral drift, fixed net charge, and shieldMAXPOWER SEMICONDUCTOR INC·Filed 2013·Granted Jul 5, 2016·1 cites·16 claims
- 4167US9129936B2Devices, components and methods combining trench field plates with immobile electrostatic chargeMAXPOWER SEMICONDUCTOR INC·Filed 2013·Granted Sep 8, 2015·1 cites·20 claims
- 4265US2019051743A1Semiconductor DeviceMAXPOWER SEMICONDUCTOR INC·Filed 2017·Application pending·0 cites
- 4364US9590075B2Semiconductor deviceMAXPOWER SEMICONDUCTOR INC·Filed 2014·Granted Mar 7, 2017·0 cites·15 claims
- 4464US8962426B2Method of manufacture for a semiconductor deviceMAXPOWER SEMICONDUCTOR INC·Filed 2013·Granted Feb 24, 2015·0 cites·7 claims
- 4564US2025241037A1Self-aligned source contact for sic switch utilizing oxidation rate difference between poly-si and sicMAXPOWER SEMICONDUCTOR INC·Filed 2024·Application pending·0 cites
- 4663US2020098856A1Power Semiconductor Devices, Methods, and Structures with Embedded Dielectric Layers Containing Permanent ChargesMAXPOWER SEMICONDUCTOR INC·Filed 2019·Application pending·0 cites
- 4763US2014183625A1Semiconductor DeviceMAXPOWER SEMICONDUCTOR INC·Filed 2013·Application pending·0 cites
- 4862US9941351B2Vertical power transistor with deep trenches and deep regions surrounding cell arrayMAXPOWER SEMICONDUCTOR INC·Filed 2017·Granted Apr 10, 2018·0 cites·19 claims
- 4962US9805933B2Vertical power transistor with deep floating termination regionsMAXPOWER SEMICONDUCTOR INC·Filed 2017·Granted Oct 31, 2017·0 cites·15 claims
- 5062US8629493B2Semiconductor deviceMAXPOWER SEMICONDUCTOR INC·Filed 2012·Granted Jan 14, 2014·0 cites·17 claims
Showing the top 50 of 85 patent records by PatentIndex Score.
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