US2019139762A1PendingUtilityA1

Epitaxial growth of defect-free, wafer-scale single-layer graphene on thin films of cobalt

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Assignee: GLOBALWAFERS CO LTDPriority: Oct 1, 2015Filed: Dec 28, 2018Published: May 9, 2019
Est. expiryOct 1, 2035(~9.2 yrs left)· nominal 20-yr term from priority
Inventors:Vikas BerrySanjay BehuraPhong NguyenMichael R. Seacrist
H10P 14/3248H10P 14/3241H10P 14/3238H10P 14/2921H10P 14/2911H10P 14/2909H10P 14/2908H10P 14/2905H10P 14/2904H10P 14/36H10P 14/24H10P 14/3406C01B 32/184C30B 29/02C30B 25/183C30B 25/18H01L 21/02658H01L 21/02502H01L 21/02488H01L 21/0262H01L 21/02392H01L 21/02395H01L 21/02527H01L 21/02378H01L 21/02491H01L 21/02381H01L 29/1606H01L 21/0242H01L 21/02389H10D 62/882
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Claims

Abstract

A method for depositing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate is provided. Due to the strong adhesion of graphene and cobalt to a semiconductor substrate, the layer of graphene is epitaxially deposited.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A multilayer structure comprising:
 a silicon wafer, the silicon wafer comprising a front wafer surface, a back wafer surface, and a circumferential wafer edge joining the front wafer surface and the back wafer surface;   a dielectric layer in contact with the front wafer surface of the silicon wafer;   a layer comprising single crystalline cobalt in contact with the dielectric layer, the layer comprising single crystalline cobalt comprising a front cobalt layer surface, a back cobalt layer surface, and a bulk cobalt layer region between the front cobalt layer surface and the back cobalt layer surface, wherein the back layer cobalt surface is in contact with the dielectric layer; and   a graphene layer in contact with the front cobalt layer surface of the layer comprising single crystalline cobalt.   
     
     
         2 . The multilayer structure of  claim 1  wherein the silicon wafer comprises a dopant selected from the group consisting of boron (p type), gallium (p type), phosphorus (n type), antimony (n type), and arsenic (n type), and any combination thereof. 
     
     
         3 . The multilayer structure of  claim 1  wherein the silicon wafer comprises boron (p type) dopant. 
     
     
         4 . The multilayer structure of  claim 1  wherein the silicon wafer comprises phosphorus (n type) dopant. 
     
     
         5 . The multilayer structure of  claim 1  wherein the silicon wafer comprises arsenic (n type) dopant. 
     
     
         6 . The multilayer structure of  claim 1  wherein the dielectric layer is selected from the group consisting of a silicon dioxide layer, a silicon nitride layer, a silicon oxynitride layer, and any combination thereof. 
     
     
         7 . The multilayer structure of  claim 1  wherein the dielectric layer is a multilayer comprising at least two of a silicon dioxide layer, a silicon nitride layer, and a silicon oxynitride layer. 
     
     
         8 . The multilayer structure of  claim 1  wherein the dielectric layer is between about 10 nanometers and about 1000 nanometers thick. 
     
     
         9 . The multilayer structure of  claim 1  wherein the dielectric layer is between about 50 nanometers and about 300 nanometers thick. 
     
     
         10 . The multilayer structure of  claim 1  wherein the layer comprising single crystalline cobalt is between about 50 nanometers and about 20 micrometers thick. 
     
     
         11 . The multilayer structure of  claim 1  wherein the layer comprising single crystalline cobalt is between about 50 nanometers and about 10 micrometers thick. 
     
     
         12 . The multilayer structure of  claim 1  wherein the layer comprising single crystalline cobalt is between about 50 nanometers and about 1 micrometer thick. 
     
     
         13 . The multilayer structure of  claim 1  wherein the graphene layer has a single mono-atomic thickness. 
     
     
         14 . The multilayer structure of  claim 1  wherein the graphene layer has a quality factor of at least about 4. 
     
     
         15 . The multilayer structure of  claim 1  wherein the graphene layer has a quality factor of at least about 7. 
     
     
         16 . The multilayer structure of  claim 1  wherein the graphene layer has a quality factor of at least about 7.5.

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