Inventor · disambiguated record
Michael R. Seacrist
Also filed as: SEACRIST MICHAEL R · SEACRIST MICHAEL ROBBIN
21 granted patents·8 pending applications·106 citations·filing 1989–2024
93Inventor score
Files withGLOBALWAFERS CO LTD13MEMC ELECTRONIC MATERIALS6SEACRIST MICHAEL R4SUNEDISON SEMICONDUCTOR LTD UEN201334164H4SUNEDISON SEMICONDUCTOR LTD1
Top patents by PatentIndex Score
29 records- 0195US8884310B2Direct formation of graphene on semiconductor substratesMEMC ELECTRONIC MATERIALS·Filed 2012·Granted Nov 11, 2014·22 cites·13 claims
- 0293US9029228B2Direct and sequential formation of monolayers of boron nitride and graphene on substratesMEMC ELECTRONIC MATERIALS·Filed 2013·Granted May 12, 2015·24 cites·42 claims
- 0391US9355842B2Direct and sequential formation of monolayers of boron nitride and graphene on substratesSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2015·Granted May 31, 2016·9 cites·23 claims
- 0487US11532501B2Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturabilityGLOBALWAFERS CO LTD·Filed 2021·Granted Dec 20, 2022·1 cites·52 claims
- 0587US9343533B2Direct formation of graphene on semiconductor substratesSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2014·Granted May 17, 2016·6 cites·48 claims
- 0686US10943813B2Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturabilityGLOBALWAFERS CO LTD·Filed 2019·Granted Mar 9, 2021·2 cites·33 claims
- 0783US11942360B2Radio frequency silicon on insulator structure with superior performance, stability, and manufacturabilityGLOBALWAFERS CO LTD·Filed 2023·Granted Mar 26, 2024·0 cites·31 claims
- 0882US11887885B2Radio frequency silicon on insulator wafer platform with superior performance, stability, and manufacturabilityGLOBALWAFERS CO LTD·Filed 2022·Granted Jan 30, 2024·0 cites·40 claims
- 0981US10573517B2Epitaxial growth of defect-free, wafer-scale single-layer graphene on thin films of cobaltSUNEDISON SEMICONDUCTOR LTD UEN201334164H·Filed 2016·Granted Feb 25, 2020·3 cites·19 claims
- 1078US10262855B2Manufacture of Group IIIA-nitride layers on semiconductor on insulator structuresSUNEDISON SEMICONDUCTOR LTD·Filed 2015·Granted Apr 16, 2019·2 cites·45 claims
- 1176US11626318B2Radio frequency silicon on insulator structure with superior performance, stability, and manufacturabilityGLOBALWAFERS CO LTD·Filed 2021·Granted Apr 11, 2023·0 cites·35 claims
- 1275US10796905B2Manufacture of group IIIA-nitride layers on semiconductor on insulator structuresGLOBALWAFERS CO LTD·Filed 2019·Granted Oct 6, 2020·1 cites·14 claims
- 1374US11289577B2Direct formation of hexagonal boron nitride on silicon based dielectricsGLOBALWAFERS CO LTD·Filed 2019·Granted Mar 29, 2022·1 cites·13 claims
- 1472US10658472B2Direct formation of hexagonal boron nitride on silicon based dielectricsGLOBALWAFERS CO LTD·Filed 2017·Granted May 19, 2020·1 cites·22 claims
- 1568US4939099AProcess for fabricating isolated vertical bipolar and JFET transistorsTEXAS INSTRUMENTS INC·Filed 1989·Granted Jul 3, 1990·34 cites·24 claims
- 1666US11075109B2Radio frequency silicon on insulator structure with superior performance, stability, and manufacturabilityGLOBALWAFERS CO LTD·Filed 2019·Granted Jul 27, 2021·0 cites·31 claims
- 1764US11276759B2Direct formation of hexagonal boron nitride on silicon based dielectricsGLOBALWAFERS CO LTD·Filed 2019·Granted Mar 15, 2022·0 cites·19 claims
- 1860US2025293073A1Reclaimable donor substrates for use in preparing multiple silicon-on-insulator structuresGLOBALWAFERS CO LTD·Filed 2024·Application pending·0 cites
- 1960US2023112094A1Modeling thermal donor formation and target resistivity for single crystal silicon ingot productionGLOBALWAFERS CO LTD·Filed 2022·Application pending·0 cites
- 2055US8080482B2Methods for preparing a semiconductor structure for use in backside illumination applicationsSEACRIST MICHAEL R·Filed 2009·Granted Dec 20, 2011·0 cites·20 claims
- 2152US2019139762A1Epitaxial growth of defect-free, wafer-scale single-layer graphene on thin films of cobaltGLOBALWAFERS CO LTD·Filed 2018·Application pending·0 cites
- 2250US2016233305A1Direct formation of graphene on semiconductor substrates and structures prepared therebySUNEDISON SEMICONDUCTOR LTD (UEN201334164H)·Filed 2016·Application pending·0 cites
- 2349US8865601B2Methods for preparing a semiconductor wafer with high thermal conductivitySEACRIST MICHAEL R·Filed 2011·Granted Oct 21, 2014·0 cites·13 claims
- 2449US2007176238A1Semiconductor wafer with high thermal conductivitySEACRIST MICHAEL R·Filed 2007·Application pending·0 cites
- 2546US9029854B2Bulk silicon wafer product useful in the manufacture of three dimensional multigate MOSFETsSEACRIST MICHAEL R·Filed 2009·Granted May 12, 2015·0 cites·8 claims
- 2643US7566951B2Silicon structures with improved resistance to radiation eventsMEMC ELECTRONIC MATERIALS·Filed 2006·Granted Jul 28, 2009·0 cites·49 claims
- 2742US2007117350A1Strained silicon on insulator (ssoi) with layer transfer from oxidized donorMEMC ELECTRONIC MATERIALS·Filed 2006·Application pending·0 cites
- 2842US2007042566A1Strained silicon on insulator (ssoi) structure with improved crystallinity in the strained silicon layerMEMC ELECTRONIC MATERIALS·Filed 2006·Application pending·0 cites
- 2941US2006138601A1Internally gettered heteroepitaxial semiconductor wafers and methods of manufacturing such wafersMEMC ELECTRONIC MATERIALS·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →