Methods and apparatus for maintaining low non-uniformity over target life

Abstract

Embodiments of improved apparatus for maintaining low non-uniformity over the life of a target are provided herein. In some embodiments, an apparatus includes a substrate support within a volume of a chamber body, opposite a target assembly of a lid atop the chamber body, with a surface; a shield disposed within the chamber body comprising one or more sidewalls surrounding the volume, the shield extending downward to below a top surface of the substrate support, radially inward, and returning upward forming an extending lip; and a first ring having (i) a first portion comprising an opening having a ceramic isolator, disposed therein, resting on top of the extending lip, and (ii) a second portion extending away from the first portion toward the surface, wherein the substrate support, over a life of the target, is configured to raise and lower, relative to the first ring, a substrate disposed on the surface.

1 . A physical vapor deposition chamber, comprising:
 a chamber body having a first volume;   a chamber lid comprising a target assembly, the target assembly comprising a target, disposed atop the chamber body;   a substrate support disposed within the first volume, opposite the target assembly, and having a substrate supporting surface;   a shield disposed within the chamber body comprising one or more sidewalls configured to surround the first volume, wherein the shield extends downward to below a top surface of the substrate support, radially inward, and then returns upward to form an upwardly extending lip;   a first ring having a first portion and a second portion, wherein the first portion comprises an opening having a ceramic isolator disposed therein, wherein the ceramic isolator rests on the top of the upwardly extending lip of the shield, and wherein the second portion extends away from the first portion toward the substrate supporting surface, and wherein the substrate support, over a course of a life of the target, is configured to raise and lower, relative to the first ring, a substrate disposed on the substrate supporting surface; and   a second ring disposed about a peripheral edge of the substrate support and adjacent to the substrate supporting surface.   
     
     
         2 . The physical vapor deposition chamber of  claim 1 , wherein an edge of the second portion of the first ring is a distance of about 2.5 mm to about 3.5 mm from the substrate. 
     
     
         3 . The physical vapor deposition chamber of  claim 1 , wherein the substrate support comprises an electrostatic chuck. 
     
     
         4 . The physical vapor deposition chamber of  claim 1 , wherein the target assembly comprises a source material and a backing plate to support the source material. 
     
     
         5 . The physical vapor deposition chamber of  claim 4 , wherein the source material is copper. 
     
     
         6 . The physical vapor deposition chamber of  claim 4 , wherein the backing plate comprises a conductive material. 
     
     
         7 . The physical vapor deposition chamber of  claim 1 , wherein the first ring is electrically isolated. 
     
     
         8 . The physical vapor deposition chamber of  claim 1 , wherein the substrate support is configured to raise to an upper position, and, when the substrate support is in the upper position, the ceramic isolator supports the first ring on the top of the upwardly extending lip of the shield and the second portion of the first ring rests on the second ring at the outer periphery of the substrate support. 
     
     
         9 . The physical vapor deposition chamber of  claim 8 , wherein, when the substrate support is in the upper position, the first ring surrounds the substrate support such that an upper surface of the substrate is positioned at a first distance above an upper surface of the first ring. 
     
     
         10 . The physical vapor deposition chamber of  claim 9 , wherein the first distance is about 3 mm above the upper surface of the first ring. 
     
     
         11 . An apparatus for processing a substrate in a physical vapor deposition chamber, comprising:
 a substrate support disposed within a first volume of a chamber body, opposite a target assembly that comprises a target and is part of a chamber lid disposed atop the chamber body, and having a substrate supporting surface;   a shield disposed within the chamber body comprising one or more sidewalls configured to surround the first volume, wherein the shield extends downward to below a top surface of the substrate support, radially inward, and then returns upward to form an upwardly extending lip; and   a first ring having a first portion and a second portion, wherein the first portion comprises an opening having a ceramic isolator disposed therein, wherein the ceramic isolator rests on the top of the upwardly extending lip of the shield, and wherein the second portion extends away from the first portion toward the substrate supporting surface, and wherein the substrate support, over a course of a life of the target, is configured to raise and lower, relative to the first ring, a substrate disposed on the substrate supporting surface.   
     
     
         12 . The apparatus of  claim 11 , wherein an edge of the second portion of the first ring is a distance of about 2.5 mm to about 3.5 mm from the substrate. 
     
     
         13 . The apparatus of  claim 11 , wherein the substrate support comprises an electrostatic chuck. 
     
     
         14 . The apparatus of  claim 11 , wherein the target assembly comprises a source material and a backing plate to support the source material. 
     
     
         15 . The apparatus of  claim 14 , wherein the source material is copper. 
     
     
         16 . The apparatus of  claim 11 , further comprising a second ring disposed about a peripheral edge of the substrate support and adjacent to the substrate supporting surface 
     
     
         17 . The apparatus of  claim 11 , wherein the first ring is electrically isolated. 
     
     
         18 . The apparatus of  claim 16 , wherein the substrate support is configured to raise to an upper position, and, when the substrate support is in the upper position, the ceramic isolator supports the first ring on the top of the upwardly extending lip of the shield and the second portion of the first ring rests on the second ring at the outer periphery of the substrate support. 
     
     
         19 . The apparatus of  claim 18 , wherein, when the substrate support is in the upper position, the first ring surrounds the substrate support such that an upper surface of the substrate is positioned at a first distance above an upper surface of the first ring. 
     
     
         20 . The apparatus of  claim 19 , wherein the first distance is about 3 mm above the upper surface of the first ring.