Film forming method and method of manufacturing semiconductor device

Abstract

A film forming method of forming a gallium oxide film doped with fluorine on a base body includes supplying a mist of a solution in which a gallium compound and a fluorine compound are dissolved to a surface of the base body while heating the base body. In this film forming method, the gallium oxide film doped with fluorine is generated on the surface of the base body. In this film forming method, the gallium oxide film doped with fluorine can be suitably formed on the surface of the base body.

What is claimed is: 
     
         1 . A film forming method of forming a gallium oxide film doped with fluorine on a base body, the film forming method comprising supplying a mist of a solution in which a gallium compound and a fluorine compound are dissolved to a surface of the base body while heating the base body. 
     
     
         2 . The film forming method according to  claim 1 , wherein the supplying of the mist of the solution in which the gallium compound and the fluorine compound are dissolved to the surface of the base body includes
 generating the mist from the solution in which both the gallium compound and the fluorine compound are dissolved, and   supplying the mist of the solution in which both the gallium compound and the fluorine compound are dissolved to the surface of the base body.   
     
     
         3 . The film forming method according to  claim 1 , wherein the supplying of the mist of the solution in which the gallium compound and the fluorine compound are dissolved to the surface of the base body includes
 generating a mist from a solution in which the gallium compound is dissolved,   generating a mist from a solution in which the fluorine compound is dissolved, and   supplying the mist of the solution in which the gallium compound is dissolved and the mist of the solution in which the fluorine compound is dissolved to the surface of the base body.   
     
     
         4 . The film forming method according to  claim 1 , wherein the gallium oxide film is a single crystal film. 
     
     
         5 . The film forming method according to  claim 1 , wherein the fluorine compound is a compound containing fluorine and hydrogen. 
     
     
         6 . The film forming method according to  claim 5 , wherein the fluorine compound is hydrofluoric acid. 
     
     
         7 . The film forming method according to  claim 5 , wherein the fluorine compound is an ammonium compound. 
     
     
         8 . The film forming method according to  claim 7 , wherein the fluorine compound is ammonium fluoride. 
     
     
         9 . The film forming method according to  claim 7 , wherein the fluorine compound is ammonium hydrogen fluoride. 
     
     
         10 . The film forming method according to  claim 1 , wherein the gallium compound is an organic material. 
     
     
         11 . The film forming method according to  claim 10 , wherein the gallium compound is a metal complex. 
     
     
         12 . The film forming method according to  claim 11 , wherein the gallium compound is gallium acetylacetonate. 
     
     
         13 . The film forming method according to  claim 1 , wherein the gallium compound is a halide. 
     
     
         14 . The film forming method according to  claim 13 , wherein the gallium compound is gallium chloride. 
     
     
         15 . The film forming method according to  claim 1 , wherein the number of fluorine atoms dissolved in the solution is no more than 10 times the number of gallium atoms dissolved in the solution. 
     
     
         16 . The film forming method according to  claim 1 , wherein the base body is formed of gallium oxide. 
     
     
         17 . The film forming method according to  claim 16 , wherein the base body is formed of β-Ga 2 O 3 . 
     
     
         18 . The film forming method according to  claim 16 , wherein the base body is formed of α-Ga 2 O 3 . 
     
     
         19 . The film forming method according to  claim 1 , wherein the base body is formed of α-Al 2 O 3 . 
     
     
         20 . The film forming method according to  claim 1 , wherein the gallium oxide film is formed of β-Ga 2 O 3 . 
     
     
         21 . The film forming method according to  claim 1 , wherein the base body is heated to 400° C. to 1000° C. in a case of forming the gallium oxide film. 
     
     
         22 . A method of manufacturing a semiconductor device, the method comprising forming the gallium oxide film according to the film forming method according to  claim 1 .