Metal-oxide semiconductor (mos) device with thick oxide

Abstract

Certain aspects of the present disclosure generally relate to a semiconductor device and techniques for fabricating a semiconductor device. In certain aspects, the semiconductor device includes a fin, a first non-insulative region disposed adjacent to a first side of the fin, and a second non-insulative region disposed adjacent to a second side of the fin. In certain aspects, the first non-insulative region and the second non-insulative region are separated by a trench, at least a portion of the trench being filled with a dielectric material disposed around the fin.

What is claimed is: 
     
         1 . A method for fabricating a semiconductor device, comprising:
 forming a semiconductor region comprising a fin;   forming a first non-insulative region and a second non-insulative region adjacent to a first side and a second side of the fin, respectively, such that a trench is created around the fin; and   filling at least a portion of the trench with a dielectric material.   
     
     
         2 . The method of  claim 1 , further comprising:
 forming a first dielectric layer between the first non-insulative region and the first side of the fin; and   forming a second dielectric layer between the second non-insulative region and the second side of the fin.   
     
     
         3 . The method of  claim 2 , wherein:
 the first and second dielectric layers comprise high-k (HK) dielectrics; and   the first and second non-insulative regions comprise metal gates (MG).   
     
     
         4 . The method of  claim 1 , wherein the dielectric material comprises nitride. 
     
     
         5 . The method of  claim 1 , further comprising forming a first insulative region and a second insulative region, wherein the first non-insulative region is formed above the first insulative region, wherein the second non-insulative region is formed above the second insulative region, and wherein the first insulative region and the second insulative region are separated by the fin. 
     
     
         6 . The method of  claim 5 , further comprising forming a first contact and a second contact, wherein the first contact is coupled to the first non-insulative region and wherein the second contact is coupled to the second non-insulative region. 
     
     
         7 . The method of  claim 1 , wherein:
 the semiconductor region comprises another fin;   the second non-insulative region is disposed adjacent to a first side of the other fin; and   the method further comprises:
 forming a third non-insulative region adjacent to a second side of the other fin such that another trench is created around the other fin; and 
 filling at least a portion of the other trench with another dielectric material. 
   
     
     
         8 . The method of  claim 7 , further comprising forming an insulative layer spanning from the second side of the fin to the first side of the other fin before forming the first non-insulative region and the second non-insulative region. 
     
     
         9 . The method of  claim 1 , further comprising:
 forming a third non-insulative region adjacent to a first edge of the fin; and   forming a fourth non-insulative region adjacent to a second edge of the fin.   
     
     
         10 . The method of  claim 9 , wherein:
 the third non-insulative region comprises an n-doped region; and   the fourth non-insulative region comprises a p-doped region.   
     
     
         11 . The method of  claim 9 , wherein:
 the third and fourth non-insulative regions comprise n-doped regions or p-doped regions; and   the semiconductor device is configured as a fin field-effect transistor (FinFET).   
     
     
         12 . The method of  claim 9 , further comprising shorting the third and fourth non-insulative regions together, wherein the semiconductor device is configured as a capacitor. 
     
     
         13 . The method of  claim 1 , wherein the dielectric material forms a notch above the fin. 
     
     
         14 . The method of  claim 13 , further comprising forming a dielectric region above the first non-insulative region, the second non-insulative region, and the fin, wherein a portion of the dielectric region is disposed in the notch above the fin formed by the dielectric material.