SEED WAFER FOR GaN THICKENING USING GAS- OR LIQUID-PHASE EPITAXY

Abstract

Embodiments relate to fabricating a wafer including a thin, high-quality single crystal GaN layer serving as a template for formation of additional GaN material. A bulk ingot of GaN material is subjected to implantation to form a subsurface cleave region. The implanted bulk material is bonded to a substrate having lattice and/or Coefficient of Thermal Expansion (CTE) properties compatible with GaN. Examples of such substrate materials can include but are not limited to AlN and Mullite. The GaN seed layer is transferred by a controlled cleaving process from the implanted bulk material to the substrate surface. The resulting combination of the substrate and the GaN seed layer, can form a template for subsequent growth of overlying high quality GaN. Growth of high-quality GaN can take place utilizing techniques such as Liquid Phase Epitaxy (LPE) or gas phase epitaxy, e.g., Metallo-Organic Chemical Vapor Deposition (MOCVD) or Hydride Vapor Phase Epitaxy (HVPE).

1 . (canceled) 
     
     
         2 . A method comprising:
 providing a donor comprising GaN and having a cleave region formed by implanted particles wherein a GaN seed layer is above the cleave region;   bonding the donor to a substrate;   separating the donor along the cleave region to produce the substrate bearing the GaN seed layer;   forming additional GaN over the GaN seed layer utilizing an epitaxial growth technique.   
     
     
         3 . A method as in  claim 2  wherein the epitaxial growth technique comprises Liquid Phase Epitaxy (LPE). 
     
     
         4 . A method as in  claim 2  wherein the epitaxial growth technique comprises vapor phase epitaxy. 
     
     
         5 . A method as in  claim 4  wherein the vapor phase growth technique comprises hydride vapor phase epitaxy (HVPE). 
     
     
         6 . A method as in  claim 4  wherein the vapor phase growth technique comprises Metallo-Organic Chemical Vapor Deposition (MOCVD). 
     
     
         7 . A method as in  claim 2  wherein the substrate comprises AlN. 
     
     
         8 . A method as in  claim 2  wherein the substrate comprises Mullite. 
     
     
         9 . A method as in  claim 2  wherein the substrate comprises Molybdenum. 
     
     
         10 . A method as in  claim 2  wherein the substrate comprises Tungsten. 
     
     
         11 . A method as in  claim 2  further comprising incorporating the additional GaN into an optoelectronic device. 
     
     
         12 . A method as in  claim 2  wherein the seed layer has a thickness of between about 100-5000 nm, and the additional GaN has a thickness of between about 0.2-10 cm. 
     
     
         13 . A method as in  claim 2  wherein the seed layer has a thickness of between about 0.5-2 um, and the additional GaN has a thickness of between about 0.5-2 cm. 
     
     
         14 . A method as in  claim 2  wherein the seed layer has a thickness of between about 0.5-1 um, and the additional GaN has a thickness of between about 0.5-1 cm. 
     
     
         15 . A method as in  claim 2  wherein the GaN seed layer comprises non-polar GaN. 
     
     
         16 . A method as in  claim 2  wherein the GaN seed layer comprises semi-polar GaN. 
     
     
         17 . A method as in  claim 2  wherein the GaN seed layer comprises polar GaN. 
     
     
         18 . A method as in  claim 17  wherein the additional GaN is grown from a Ga face of the polar GaN. 
     
     
         19 . A method as in  claim 17  wherein the additional GaN is grown from an N face of the polar GaN. 
     
     
         20 . A method as in  claim 2  wherein the bonding is accomplished utilizing a bonding layer. 
     
     
         21 . A method as in  claim 20  wherein the bonding layer comprises spin-on-glass.