US2019355623A1PendingUtilityA1

Method to form hybrid sige fin

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Assignee: SEMICONDUCTOR MFG INT SHANGHAI CORPPriority: Mar 21, 2017Filed: Jul 18, 2019Published: Nov 21, 2019
Est. expiryMar 21, 2037(~10.6 yrs left)· nominal 20-yr term from priority
Inventors:Hao DengJianhua XuFeng ZhouXiaojun Yang
H01L 21/823412H01L 21/823431H01L 27/0886H10D 30/62H10D 30/024H10D 84/834H10D 84/0128H10D 84/0158H10D 84/038
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Claims

Abstract

A semiconductor device includes a semiconductor substrate, a first SiGe semiconductor fin on the semiconductor substrate, and a dielectric layer on the semiconductor substrate and side surfaces of the first SiGe semiconductor fin. The first SiGe semiconductor fin has a Ge content that gradually changes from bottom to top. The dielectric layer has an upper surface lower than an upper surface of the first SiGe semiconductor fin.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a semiconductor substrate;   a first SiGe semiconductor fin on the semiconductor substrate, the first SiGe semiconductor fin having a Ge content that gradually changes from bottom to top; and   a dielectric layer on the semiconductor substrate and side surfaces of the first SiGe semiconductor fin, the dielectric layer having an upper surface lower than an upper surface of the first SiGe semiconductor fin.   
     
     
         2 . The semiconductor device of  claim 1 , further comprising:
 a second SiGe semiconductor fin on the semiconductor substrate and having an upper surface higher than the upper surface of the dielectric layer.   
     
     
         3 . The semiconductor device of  claim 2 , wherein the Ge content of the first SiGe semiconductor fin gradually increases from bottom to top, and the Ge content of the second SiGe semiconductor fin gradually decreases from bottom to top. 
     
     
         4 . The semiconductor device of  claim 2 , wherein the Ge content of the first SiGe semiconductor fin gradually decreases from bottom to top, and the Ge content of the second SiGe semiconductor fin gradually increases from bottom to top.

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