Vapor phase growth apparatus

Abstract

A vapor phase growth apparatus according to an embodiment includes a reaction chamber, a ring-shaped holder provided in the reaction chamber, the ring-shaped holder configured to hold a substrate, the ring-shaped holder including an outer portion, and an inner portion on which a ring-shaped protrusion is provided and surrounded by the outer portion, the ring-shaped protrusion being separated from the outer portion, an upper surface of the outer portion being higher than an upper surface of the ring-shaped protrusion, and a heater provided below the ring-shaped holder.

1 - 12 . (canceled) 
     
     
         13 . A vapor phase growth apparatus comprising:
 a reaction chamber configured to process a substrate having a predetermined diameter;   a ring-shaped holder provided in the reaction chamber, the ring-shaped holder configured to hold the substrate, the ring-shaped holder including an inner portion and an outer portion, each having a ring shape, the inner portion being surrounded by the outer portion, the inner portion including a ring-shaped protrusion and a ring-shaped recess portion, each having a predetermined width, the ring-shaped protrusion being surrounded by the ring-shaped recess portion, an upper surface of the outer portion being higher than an upper surface of the ring-shaped protrusion, a diameter of an inner circumference of the outer portion being larger than the predetermined diameter of the substrate, the substrate being placed inside the outer portion, the substrate being placed on the ring-shaped protrusion, a whole part of the upper surface of the ring-shaped protrusion configured to contact the substrate, the ring-shaped recess portion configured not to contact the substrate even when the substrate moves horizontally inside the outer portion, and the diameter of the inner circumference of the outer portion minus the predetermined width of the ring-shaped recess portion being less than the diameter of the substrate; and   a heater provided below the ring-shaped holder.   
     
     
         14 . The vapor phase growth apparatus according to  claim 13 ,
 wherein, at least a part of an outer end of the upper surface of the ring-shaped protrusion contacts to the substrate at a position distant from a circumference of the substrate.   
     
     
         15 . The vapor phase growth apparatus according to  claim 13 ,
 wherein, at least a part of a back surface of the substrate has a portion that does not contact with the upper surface of the ring-shaped protrusion between a region of the back surface of the substrate contacting the upper surface of the ring-shaped protrusion and a circumference of the substrate.   
     
     
         16 . The vapor phase growth apparatus according to  claim 13  further comprising:
 a rotating unit having a cylindrical shape and surrounding the heater, the ring-shaped holder being placed on a top of the rotating unit, the rotating unit configured to isolate atmosphere of a backside of the substrate from atmosphere of a front side of the substrate. 
 
     
     
         17 . The vapor phase growth apparatus according to  claim 16  further comprising:
 a shower plate provided in an upper part of the reaction chamber, the shower plate having a plurality of gas ejection holes supplying process gas to the reaction chamber, 
 wherein, the rotating unit is configured to prevent an intrusion of the process gas to the backside of the substrate. 
 
     
     
         18 . The vapor phase growth apparatus according to  claim 13 ,
 wherein an inside diameter of the inner portion is equal to or greater than 90% of the predetermined diameter of the substrate.   
     
     
         19 . A vapor phase growth apparatus comprising:
 a reaction chamber configured to process a substrate having a predetermined diameter;   a ring-shaped holder provided in the reaction chamber, the ring-shaped holder configured to hold the substrate, the ring-shaped holder including an inner portion and an outer portion, each having a ring shape, the inner portion being surrounded by the outer portion, the inner portion including a top surface and a recess portion, each having a ring shape and each having a predetermined width, the top surface being surrounded by the recess portion, an upper surface of the outer portion being higher than the top surface, a diameter of an inner circumference of the outer portion being larger than the predetermined diameter of the substrate, the substrate being placed inside the outer portion, the substrate being placed on the top surface, a whole part of the top surface configured to contact the substrate, the recess portion configured not to contact the substrate even when the substrate moves horizontally inside the outer portion, and the diameter of the inner circumference of the outer portion minus the predetermined width of the recess portion being less than the diameter of the substrate; and   a heater provided below the ring-shaped holder.