Plasma processing apparatus and method of manufacturing semiconductor device using the same

Abstract

A plasma processing apparatus includes a process chamber, a substrate support chuck configured to support a substrate in the process chamber, the substrate support chuck including an upper cooling channel and a lower cooling channel that are symmetrically separated from each other, and a support chuck temperature controller configured to supply a first coolant to the upper cooling channel and to supply a second coolant to the lower cooling channel.

1 . A plasma processing apparatus comprising:
 a process chamber;   a substrate support chuck configured to support a substrate in the process chamber, the substrate support chuck comprising an upper cooling channel and a lower cooling channel that are symmetrically separated from each other; and   a support chuck temperature controller configured to supply a first coolant to the upper cooling channel and to supply a second coolant to the lower cooling channel.   
     
     
         2 . The plasma processing apparatus of  claim 1 , wherein the support chuck temperature controller is configured to control the first coolant and the second coolant to flow in directions opposite to each other. 
     
     
         3 . The plasma processing apparatus of  claim 1 , wherein the support chuck temperature controller is configured to control the first coolant and the second coolant to flow in the same direction. 
     
     
         4 . The plasma processing apparatus of  claim 1 , wherein:
 the upper cooling channel extends in a spiral direction from a first end adjacent to a center of the substrate support chuck to a second end adjacent to an edge of the substrate support chuck; and   the lower cooling channel extends in a spiral direction from a third end adjacent to the center of the substrate support chuck to a fourth end adjacent to the edge of the substrate support chuck.   
     
     
         5 . The plasma processing apparatus of  claim 4 , wherein the support chuck temperature controller is configured to control the first coolant and the second coolant to flow in opposite directions from each other such that:
 when the first coolant is introduced into the upper cooling channel through the first end of the upper cooling channel adjacent to the center of the substrate support chuck, the second coolant is introduced into the lower cooling channel through the fourth end of the lower cooling channel adjacent to the edge of the substrate support chuck; and   when the first coolant is introduced into the upper cooling channel through the second end of the upper cooling channel adjacent to the edge of the substrate support chuck, and the second coolant is introduced into the lower cooling channel through the third end of the lower cooling channel adjacent to the center of the substrate support chuck.   
     
     
         6 . The plasma processing apparatus of  claim 5 , wherein the support chuck temperature controller is further configured to equally adjust the flow rate of the first coolant and the flow rate of the second coolant. 
     
     
         7 . The plasma processing apparatus of  claim 4 , wherein the support chuck temperature controller is configured to control the first coolant and the second coolant to flow in the same direction as each other such that:
 when the first coolant is introduced into the upper cooling channel through the first end of the upper cooling channel adjacent to the center of the substrate support chuck, the second coolant is configured to be introduced into the lower cooling channel through the third end of the lower cooling channel adjacent to the center of the substrate support chuck; and   when the first coolant is introduced into the upper cooling channel through the second end of the upper cooling channel adjacent to the edge of the substrate support chuck, the second coolant is introduced into the lower cooling channel through the fourth end of the lower cooling channel adjacent to the edge of the substrate support chuck.   
     
     
         8 . The plasma processing apparatus of  claim 1 , wherein the support chuck temperature controller comprises:
 a splitter configured to adjust a flow rate of the first coolant supplied to the upper cooling channel and a flow rate of the second coolant supplied to the lower cooling channel;   a merger in which the first coolant flowing out of the upper cooling channel and the second coolant flowing out of the lower cooling channel are merged; and   a coolant temperature controller configured to adjust the temperature of the coolant merged at the merger.   
     
     
         9 - 10 . (canceled) 
     
     
         11 . The plasma processing apparatus of  claim 1 , wherein the substrate support chuck comprises:
 a center plate provided with the upper cooling channel and the lower cooling channel;   an upper cover plate attached to an upper surface of the center plate to cover the upper cooling channel; and   a lower cover plate attached to a lower surface of the center plate opposite to the upper surface of the center plate to cover the lower cooling channel.   
     
     
         12 . The plasma processing apparatus of  claim 1 , further comprising:
 a first fin protruding from an inner wall of the upper cooling channel; and   a second fin protruding from an inner wall of the lower cooling channel.   
     
     
         13 . The plasma processing apparatus of  claim 12 , wherein:
 the first fin extends along an extending direction of the upper cooling channel; and   the second fin extends along an extending direction of the lower cooling channel.   
     
     
         14 . The plasma processing apparatus of  claim 12 , wherein:
 the first fin comprises a plurality of fin portions extending parallel to each other; and   the second fin comprises a plurality of fin portions extending parallel to each other.   
     
     
         15 . A plasma processing apparatus comprising:
 a process chamber;   a substrate support chuck configured to support a substrate in the process chamber, the substrate support chuck comprising an upper cooling channel and a lower cooling channel symmetrical to each other with respect to a plane horizontally traversing to the substrate support chuck; and   a support chuck temperature controller configured to supply a first coolant to the upper cooling channel and to supply a second coolant to the lower cooling channel and configured to determine a flow direction of the first coolant and a flow direction of the second coolant.   
     
     
         16 . The plasma processing apparatus of  claim 15 , wherein:
 the upper cooling channel extends in a spiral direction from a first end adjacent to the center of the substrate support chuck to a second end adjacent to an edge of the substrate support chuck;   the lower cooling channel extends in a spiral direction from a third end adjacent to the center of the substrate support chuck to a fourth end adjacent to the edge of the substrate support chuck; and   the support chuck temperature controller is further configured to control the first coolant and the second coolant to flow in directions opposite to each other.   
     
     
         17 . The plasma processing apparatus of  claim 15 , wherein:
 the upper cooling channel extends in a spiral direction from a first end adjacent to the center of the substrate support chuck to a second end adjacent to an edge of the substrate support chuck;   the lower cooling channel extends in a spiral direction from a third end adjacent to the center of the substrate support chuck to a fourth end adjacent to the edge of the substrate support chuck; and   the support chuck temperature controller is further configured to control the first coolant and the second coolant to flow in the same direction.   
     
     
         18 - 20 . (canceled) 
     
     
         21 . A plasma processing apparatus comprising:
 a process chamber; and   a substrate support chuck configured to support a substrate in the process chamber, the substrate support chuck comprising a cooling channel configured to flow a coolant and a fin protruding from an inner wall of the cooling channel.   
     
     
         22 . The plasma processing apparatus of  claim 21 , wherein:
 the cooling channel comprises an upper cooling channel and a lower cooling channel symmetrical to each other with respect to a plane horizontally transverse to the substrate support chuck; and   the fin comprises a first fin portion protruding from an inner wall of the upper cooling channel and a second fin portion protruding from an inner wall of the lower cooling channel.   
     
     
         23 . The plasma processing apparatus of  claim 22 , wherein:
 the upper cooling channel extends in a spiral direction from a first end adjacent to a center of the substrate support chuck to a second end adjacent to an edge of the substrate support chuck;   the lower cooling channel extends in a spiral direction from a third end adjacent to the center of the substrate support chuck to a fourth end adjacent to the edge of the substrate support chuck; and   the plasma processing apparatus is configured such that a flow direction of a first coolant flowing along the upper cooling channel and a flow direction of a second coolant flowing along the lower cooling channel are opposite to each other.   
     
     
         24 . The plasma processing apparatus of  claim 22 , wherein:
 the upper cooling channel extends in a spiral direction from a first end adjacent to a center of the substrate support chuck to a second end adjacent to an edge of the substrate support chuck;   the lower cooling channel extends in a spiral direction from a third end adjacent to the center of the substrate support chuck to a fourth end adjacent to the edge of the substrate support chuck; and   the plasma processing apparatus is configured such that a flow direction of a first coolant flowing along the upper cooling channel and a flow direction of a second coolant flowing along the lower cooling channel are the same.   
     
     
         25 . The plasma processing apparatus of  claim 21 , wherein the fin comprises a plurality of fin portions extending parallel to each other in an extending direction of the cooling channel. 
     
     
         26 . (canceled)