Dicing A Wafer

Abstract

A method for dicing a wafer includes scribing perforations in a wafer. The wafer has a monocrystalline structure and the perforations have a polycrystalline structures The method also includes adhering the wafer to a top surface of a dicing tape and applying a downward force on a periphery of the dicing tape. The downward force causes a bottom surface of the dicing tape to deform around a contour of a dome shaped chuck, breaking the perforations in the wafer.

1 . A method for dicing a wafer comprising:
 scribing perforations in a wafer;   adhering the wafer to a top surface of a dicing tape; and   applying a downward force on a periphery of the dicing tape, wherein the downward force causes a bottom surface of the dicing tape to deform around a contour of a dome-shaped chuck, breaking the perforations in the wafer.   
     
     
         2 . The method of  claim 1 , wherein the dicing tape is affixed to a flex frame. 
     
     
         3 . The method of  claim 1 , wherein the scribing is executed by a laser that lases the wafer in two dimensions. 
     
     
         4 . The method of  claim 1 , further comprising returning the dicing tape to the first position after the application of the downward force. 
     
     
         5 . The method of  claim 1 , wherein the flex frame has a circular shape. 
     
     
         6 . The method of  claim 1 , wherein the wafer comprises a plurality of dies for integrated circuit (IC) chips, wherein the plurality of dies are separated by the perforations in the wafer. 
     
     
         7 . The method of  claim 1 , wherein the dicing tape is formed of an elastic material. 
     
     
         8 . The method of  claim 1 , wherein the dome-shaped chuck has a diameter larger than a largest dimension of the wafer and the diameter of the dome-shaped chuck is less than an inner diameter of the flex frame. 
     
     
         9 . A method for forming an integrated circuit (IC) chip, the method comprising:
 adhering a wafer to dicing tape, the wafer comprising:
 a given die forming a discrete circuit; and 
 a plurality of perforations, wherein the given die is circumscribed by a set of the plurality of perforations of the wafer; 
   applying transverse forces to a surface of the dicing tape opposite the wafer that cause the plurality of perforations in the wafer to break; and   packaging the given die of the plurality of dies in an IC chip.   
     
     
         10 . The method of  claim 9 , wherein the transverse forces induce non-uniform lateral forces across a thickness of the wafer. 
     
     
         11 . The method of  claim 9 , wherein the wafer has a monocrystalline structure and the plurality of perforations have a polycrystalline structure. 
     
     
         12 . The method of  claim 9 , wherein the plurality of perforations are formed with a lasing process. 
     
     
         13 . The method of  claim 9 , wherein the transverse forces result in application of more lateral force to a top region of the dies than to a bottom region. 
     
     
         14 . A method for forming a plurality of integrated circuit (IC) chips, the method comprising:
 adhering a wafer comprising perforations between dies of the wafer to a dicing tape;   applying transverse forces to a surface of the dicing tape opposite the wafer that cause the perforations in the wafer to break; and   packaging the dies of the wafer in integrated circuit (IC) chips.   
     
     
         15 . The method of  claim 14 , wherein the transverse forces induce non-uniform lateral forces across a thickness of the wafer. 
     
     
         16 . The method of  claim 14 , wherein the breaking of the perforations causes the dies of the wafer to separate. 
     
     
         17 . The method of  claim 14 , wherein the wafer has a monocrystalline structure and the perforations have a polycrystalline structure. 
     
     
         18 . The method of  claim 14 , wherein the perforations are formed with a lasing process. 
     
     
         19 . The method of  claim 14 , wherein the wafer is formed of silicon. 
     
     
         20 . The method of  claim 14 , wherein the transverse forces result in application of more lateral force to a top region of the dies than to a bottom region.