Methods for depositing thin films comprising indium nitride by atomic layer deposition

Abstract

Atomic layer deposition (ALD) processes for forming thin films comprising InN are provided. The thin films may find use, for example, in light-emitting diodes.

We claim: 
     
         1 . A method for depositing a thin film comprising InN on a substrate in a reaction space by an atomic layer deposition (ALD) process comprising a plurality of InN deposition cycles comprising:
 contacting the substrate with a vapor phase In precursor such that In precursor adsorbs on the substrate surface; and   contacting the substrate with a vapor phase nitrogen reactant, such that the nitrogen reactant reacts with the adsorbed In precursor to form InN.   
     
     
         2 . The method of  claim 1 , wherein the deposited film is an epitaxial or single-crystal film. 
     
     
         3 . The method of  claim 1 , wherein the InN is deposited at a growth rate of less than 1.5 Å/deposition cycle. 
     
     
         4 . The method of  claim 1 , wherein the deposition cycle additionally comprises contacting the substrate with a plasma pulse to provide heat for crystallization. 
     
     
         5 . The method of  claim 1 , wherein the In precursor comprises an organic In compound. 
     
     
         6 . The method of  claim 5 , wherein the organic In compound is cyclopentadienylindium (InCp), dimethylethylindium (DMEI), trimethylindium (TMI) or triethylindium (TEI). 
     
     
         7 . The method of  claim 6 , wherein the organic In compound has a formula InR 3 , wherein the R is selected from substituted, branched, linear or cyclic C1-C10 hydrocarbons. 
     
     
         8 . The method of  claim 1 , wherein the In precursor comprises an indium halide. 
     
     
         9 . The method of  claim 8 , wherein the In precursor is InCl 3  or InI 3 . 
     
     
         10 . The method of  claim 1 , wherein the nitrogen reactant does not comprise an activated compound. 
     
     
         11 . The method of  claim 1 , wherein the nitrogen reactant comprises nitrogen plasma. 
     
     
         12 . The method of  claim 11 , wherein the nitrogen plasma is formed remotely. 
     
     
         13 . The method of  claim 11 , wherein the nitrogen plasma is formed in situ. 
     
     
         14 . The method of  claim 11 , wherein the nitrogen plasma does not have substantial amount of N ions when it contacts the substrate. 
     
     
         15 . The method of  claim 11 , wherein the nitrogen reactant further comprises hydrogen plasma. 
     
     
         16 . The method of  claim 11 , wherein the InN thin film is deposited at a temperature below 200° C. 
     
     
         17 . The method of  claim 1 , further comprising a GaN deposition cycle thereby depositing a GaInN film. 
     
     
         18 . The method of  claim 1 , wherein the ALD process is a thermal ALD process. 
     
     
         19 . The method of  claim 1 , wherein the thin film is deposited at a temperature below 400° C. 
     
     
         20 . The method of  claim 1 , wherein the reaction chamber is part of a flow-type reactor.