US2021005431A1PendingUtilityA1

Plasma Processing Apparatus With Post Plasma Gas Injection

Assignee: MATTSON TECH INCPriority: Jun 9, 2017Filed: Sep 21, 2020Published: Jan 7, 2021
Est. expiryJun 9, 2037(~10.9 yrs left)· nominal 20-yr term from priority
H10P 72/0406H10P 70/20H10P 50/287H01J 37/32009H01J 37/32715H01J 37/3244H01J 37/32422B08B 7/0035H01J 2237/002H01L 21/67028H01L 21/31138H01L 21/02057
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Claims

Abstract

Plasma processing with post plasma gas injection is provided. In one example implementation, a plasma processing apparatus includes a plasma chamber. The apparatus includes a processing chamber separated from the plasma chamber. The processing chamber includes a substrate holder operable to support a workpiece. The apparatus includes a plasma source configured to generate a plasma in the plasma chamber. The apparatus includes a separation grid separating the plasma chamber from the processing chamber. The separation grid can be configured to filter one or more ions generated in the plasma and allow the passage of neutral particles from the plasma chamber to the processing chamber. The apparatus can include at least one gas port configured to inject a gas into neutral particles passing through the separation grid.

Claims

exact text as granted — not AI-modified
1 . A plasma processing apparatus comprising:
 a plasma chamber;   a processing chamber separated from the plasma chamber, the processing chamber comprising a substrate holder operable to support a substrate;   a plasma source configured to generate a plasma in the plasma chamber;   a separation grid separating the plasma chamber and the processing chamber, the separation grid configured to filter one or more ions generated in the plasma and allow the passage of neutral particles from the plasma chamber to the processing chamber; and   at least one gas port configured to inject a gas into neutral particles passing through the separation grid.   
     
     
         2 . The plasma processing apparatus of  claim 1 , wherein the at least one gas port comprises a first gas port operable to inject a gas into neutral particles at a first portion of the separation grid and a second gas port operable to inject a gas into neutral particles at a second portion of the separation grid. 
     
     
         3 . The plasma processing apparatus of  claim 2 , wherein the first portion is a peripheral portion of the separation grid and the second portion is a center portion of the separation grid. 
     
     
         4 . The plasma processing apparatus of  claim 1 , wherein the separation grid comprises a first grid plate and a second grid plate disposed in spaced parallel relationship. 
     
     
         5 . The plasma processing apparatus of  claim 2 , wherein the gas port is configured to inject a gas between the first grid plate and the second grid plate. 
     
     
         6 . The plasma processing apparatus of  claim 6 , wherein the separation grid comprises a third grid plate disposed in spaced parallel relationship with the first grid plate and the second grid plate. 
     
     
         7 . The plasma processing apparatus of  claim 6 , wherein the gas port is configured to inject a gas between the second grid plate and the third grid plate. 
     
     
         8 . The plasma processing apparatus of  claim 1 , wherein the at least one gas port is configured to inject a gas beneath a bottom surface of the separation grid in one or more of a horizontal direction, vertical direction, or oblique direction. 
     
     
         9 . The plasma processing apparatus of  claim 4 , wherein the at least one gas port comprises:
 a first gas port configured to inject a gas between the first grid plate and the second grid plate; and   a second gas port configured to inject a gas between the second grid plate and the third grid plate.   
     
     
         10 . The plasma processing apparatus of  claim 2 , wherein one or more of the first grid plate and the second grid plate are electrically conductive and grounded. 
     
     
         11 . A separation grid for a plasma processing apparatus, the separation grid comprising:
 a first grid plate comprising a plurality of holes arranged in a first pattern;   a second grid plate disposed in spaced parallel relation with the first grid plate, the second grid plate having a plurality of holes arranged in a second pattern; and   at least one gas port configured to inject a gas into the separation grid.   
     
     
         12 . The separation grid of  claim 11 , wherein the at least on gas port is configured to inject a gas between the first grid plate and the second grid plate. 
     
     
         13 . The separation grid of  claim 11 , wherein one or more of the first grid plate and the second grid plate are electrically conductive and operable to be grounded. 
     
     
         14 . The separation grid of  claim 11 , wherein the at least one gas port comprises a first gas port operable to inject a gas at a first portion of the separation grid and a second gas port operable to inject a gas at a second portion of the separation grid. 
     
     
         15 . The separation grid of  claim 11 , wherein the separation grid further comprises a third grid plate disposed in spaced parallel relationship with the second grid plate. 
     
     
         16 . The separation grid of  claim 15 , wherein the at least one gas port is configured to inject a gas between the second grid plate and the third grid plate. 
     
     
         17 . (canceled) 
     
     
         18 . (canceled) 
     
     
         19 . (canceled) 
     
     
         20 . (canceled)

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