Structure of a semiconductor array

Abstract

A structure of a semiconductor array comprises multiple a backplane driver, wherein the backplane driver having a first surface and a second surface; a plurality of compound semiconductor light emitting unit disposed in an array on the first surface of the backplane driver having a gap between any two adjacent ones, wherein the each compound semiconductor light emitting unit having a first surface and a second surface, wherein the second surface of the each compound semiconductor light emitting unit having a cathode and an anode, wherein the cathode and the anode of the each compound semiconductor light emitting unit electrically connected to the first surface of the backplane driver, and wherein the cathode and the anode of the each compound semiconductor light emitting unit are separated from each other from the adjacent electrodes of the adjacent compound semiconductor light emitting units; and a polymer layer disposed above the first surface of the each compound semiconductor light emitting unit.

What is claimed is: 
     
         1 . A semiconductor array comprising:
 a backplane driver,   wherein the backplane driver having a first surface and a second surface;   a plurality of compound semiconductor light emitting unit disposed in an array on the first surface of the backplane driver having a gap between any two adjacent ones,   wherein the each compound semiconductor light emitting unit having a first surface and a second surface,   wherein the second surface of the each compound semiconductor light emitting unit having a cathode and an anode,   wherein the cathode and the anode of the each compound semiconductor light emitting unit electrically connected to the first surface of the backplane driver, and   wherein the cathode and the anode of the each compound semiconductor light emitting unit are separated from each other from the adjacent electrodes of the adjacent compound semiconductor light emitting units; and   a polymer layer disposed above the first surface of the each compound semiconductor light emitting unit.   
     
     
         2 . The semiconductor array according to  claim 1 , wherein the polymer is selected from the group consisting of gels, sol-gels, epoxy, silicone, polyimide, parylene, cohesive gels, silicone gels, PMMA, photosensitive photoresist, UV cure able glues, thermal cure able glues and dyeing polymer. 
     
     
         3 . The semiconductor array according to  claim 2 , wherein the polymer is mixed with powders including TiO 2 , Al 2 O 3 , SiO 2 , ZnO and Si. 
     
     
         4 . The semiconductor array according to  claim 1 , wherein a wavelength conversion material is placed on top of the compound semiconductor light emitting unit to convert an original color from the compound semiconductor light emitting unit to a target color. 
     
     
         5 . The semiconductor array according to  claim 4 , wherein the wavelength conversion material is at least one of a phosphor or a quantum dots. 
     
     
         6 . The semiconductor array according to  claim 1 , wherein a dam array aligned over the gap, wherein the dam array has openings located above the first surface of the each compound semiconductor light emitting unit, and wherein the each opening is aligned to the each compound semiconductor light emitting unit. 
     
     
         7 . The semiconductor array according to  claim 6 , wherein the dam array is filled with a wavelength conversion material. 
     
     
         8 . The semiconductor array according to  claim 7 , wherein the wavelength conversion material is at least one of a phosphor or a quantum dots.