Method, system, and device for phase change memory switch wall cell with approximately horizontal electrode contact

Abstract

Embodiments disclosed herein may include depositing a storage component material over and/or in a trench in a dielectric material, including depositing the storage component material on approximately vertical walls of the trench and a bottom of the trench. Embodiments may also include etching the storage component material so that at least a portion of the storage component material remains on the approximately vertical walls and the bottom of the trench, wherein the trench is contacting an electrode and a selector such that storage component material on the bottom of the trench contacts the electrode.

1 . A method, comprising:
 forming a first dielectric layer;   forming a second dielectric layer; and   forming one or more storage components of a memory array over a selector layer such that the one or more storage components at least partially enclose the first dielectric layer and the second dielectric layer.   
     
     
         2 . The method of  claim 1 , wherein at least one of the one or more storage components comprises:
 a first portion in contact with a first electrode line; and   a second portion extending from the first portion and in contact with a second electrode line.   
     
     
         3 . The method of  claim 2 , wherein the selector layer is formed in contact with the first electrode line. 
     
     
         4 . The method of  claim 2 , further comprising:
 forming a bit line electrode in contact with the second electrode line.   
     
     
         5 . The method of  claim 4 , further comprising:
 forming a third electrode line in contact with a word line electrode that is orthogonal to the bit line electrode.   
     
     
         6 . The method of  claim 2 , wherein the first dielectric layer is formed in contact with the first portion and the second dielectric layer is formed in contact with the second portion. 
     
     
         7 . The method of  claim 2 , wherein the one or more storage components are formed within a trench in the first dielectric layer. 
     
     
         8 . The method of  claim 7 , wherein the trench at least partially contacts the first electrode line. 
     
     
         9 . The method of  claim 1 , further comprising:
 forming one or more selectors from the selector layer; and   electrically connecting the one or more selectors with an associated storage component of the one or more storage components via an associated portion of an electrode line.   
     
     
         10 . The method of  claim 9 , wherein the one or more selectors comprise a different material than the one or more storage components. 
     
     
         11 . A method, comprising:
 forming a first dielectric layer;   forming a second dielectric layer; and   forming a storage component material over one or more selectors such that the storage component material at least partially encloses the first dielectric layer and the second dielectric layer.   
     
     
         12 . The method of  claim 11 , wherein the storage component material comprises:
 a first portion in contact with a first electrode line; and   a second portion extending from the first portion and in contact with a second electrode line.   
     
     
         13 . The method of  claim 12 , further comprising:
 electrically connecting a selector of the one or more selectors with the storage component material via the first portion of the first electrode line.   
     
     
         14 . The method of  claim 13 , further comprising:
 forming the selector of the one or more selectors in a selector layer.   
     
     
         15 . The method of  claim 13 , wherein the selector comprises a different material than the storage component material. 
     
     
         16 . The method of  claim 12 , further comprising:
 forming a bit line electrode in contact with the second electrode line.   
     
     
         17 . The method of  claim 16 , further comprising:
 forming a third electrode line in contact with a word line electrode that is orthogonal to the bit line electrode.   
     
     
         18 . The method of  claim 12 , wherein the first dielectric layer is formed in contact with the first portion and the second dielectric layer is formed in contact with the second portion. 
     
     
         19 . A method, comprising:
 forming a first dielectric layer;   forming a second dielectric layer; and   forming a storage component material over one or more selectors and within a trench in the first dielectric layer such that the storage component material at least partially encloses the first dielectric layer and the second dielectric layer.   
     
     
         20 . The method of  claim 19 , wherein the storage component material is formed such that:
 the trench at least partially contacts a first electrode line in contact with a first portion of the storage component material; and   a second portion of the storage component material extends from the first portion and is in contact with a second electrode line.