Inventor · disambiguated record
Fabio Pellizzer
Also filed as: PELLIZZER FABIO
289 granted patents·50 pending applications·1,984 citations·filing 2002–2025
99Inventor score
Files withMICRON TECHNOLOGY INC243PELLIZZER FABIO32ST MICROELECTRONICS SRL17INTEL CORP13OVONYX INC11
Top patents by PatentIndex Score
339 records- 0198US11139016B1Read refresh operationMICRON TECHNOLOGY INC·Filed 2020·Granted Oct 5, 2021·8 cites·25 claims
- 0298US11043277B1Two multi-level memory cells sensed to determine multiple data valuesMICRON TECHNOLOGY INC·Filed 2020·Granted Jun 22, 2021·8 cites·20 claims
- 0398US10269442B1Drift mitigation with embedded refreshMICRON TECHNOLOGY INC·Filed 2017·Granted Apr 23, 2019·26 cites·20 claims
- 0498US9978810B2Three-dimensional memory apparatuses and methods of useMICRON TECHNOLOGY INC·Filed 2015·Granted May 22, 2018·30 cites·26 claims
- 0598US9136307B2Memory cells and memory cell formation methods using sealing materialPELLIZZER FABIO·Filed 2012·Granted Sep 15, 2015·43 cites·26 claims
- 0697US11615854B2Identify the programming mode of memory cells during reading of the memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 28, 2023·7 cites·18 claims
- 0797US11018190B2Three-dimensional memory apparatuses and methods of useMICRON TECHNOLOGY INC·Filed 2020·Granted May 25, 2021·4 cites·20 claims
- 0897US10490602B2Three dimensional memory arraysMICRON TECHNOLOGY INC·Filed 2017·Granted Nov 26, 2019·11 cites·17 claims
- 0997US10283703B2Cross-point memory and methods for forming of the sameMICRON TECHNOLOGY INC·Filed 2017·Granted May 7, 2019·22 cites·20 claims
- 1097US9673393B2Methods of forming memory arraysMICRON TECHNOLOGY INC·Filed 2016·Granted Jun 6, 2017·17 cites·20 claims
- 1197US9275730B2Apparatuses and methods of reading memory cells based on response to a test pulseMICRON TECHNOLOGY INC·Filed 2014·Granted Mar 1, 2016·27 cites·23 claims
- 1297US7534625B2Phase change memory with damascene memory elementKARPOV ILYA V·Filed 2006·Granted May 19, 2009·86 cites·9 claims
- 1397US7391642B2Multilevel programming of phase change memory cellsINTEL CORP·Filed 2005·Granted Jun 24, 2008·64 cites·17 claims
- 1497US6972430B2Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereofOVONYX INC·Filed 2003·Granted Dec 6, 2005·158 cites·16 claims
- 1596US11514983B2Identify the programming mode of memory cells based on cell statistics obtained during reading of the memory cellsMICRON TECHNOLOGY INC·Filed 2021·Granted Nov 29, 2022·5 cites·20 claims
- 1696US11342382B1Capacitive pillar architecture for a memory arrayMICRON TECHNOLOGY INC·Filed 2020·Granted May 24, 2022·4 cites·25 claims
- 1796US10593399B2Self-selecting memory array with horizontal bit linesMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 17, 2020·22 cites·34 claims
- 1896US10424374B2Programming enhancement in self-selecting memoryMICRON TECHNOLOGY INC·Filed 2017·Granted Sep 24, 2019·17 cites·18 claims
- 1996US9748311B2Cross-point memory and methods for fabrication of sameMICRON TECHNOLOGY INC·Filed 2014·Granted Aug 29, 2017·26 cites·29 claims
- 2096US9627052B1Apparatuses and methods for current limitation in threshold switching memoriesMICRON TECHNOLOGY INC·Filed 2015·Granted Apr 18, 2017·18 cites·20 claims
- 2196US7422926B2Self-aligned process for manufacturing phase change memory cellsST MICROELECTRONICS SRL·Filed 2006·Granted Sep 9, 2008·65 cites·18 claims
- 2295US11587606B2Decoding architecture for memory devicesMICRON TECHNOLOGY INC·Filed 2021·Granted Feb 21, 2023·2 cites·35 claims
- 2395US11482284B1Parallel drift cancellationMICRON TECHNOLOGY INC·Filed 2021·Granted Oct 25, 2022·3 cites·25 claims
- 2495US11133062B1Two memory cells sensed to determine one data valueMICRON TECHNOLOGY INC·Filed 2020·Granted Sep 28, 2021·4 cites·25 claims
- 2595US10868248B2Tapered memory cell profilesMICRON TECHNOLOGY INC·Filed 2019·Granted Dec 15, 2020·6 cites·18 claims
- 2695US10546632B2Multi-level self-selecting memory deviceMICRON TECHNOLOGY INC·Filed 2017·Granted Jan 28, 2020·13 cites·12 claims
- 2795US10424730B2Tapered memory cell profilesMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 24, 2019·15 cites·20 claims
- 2895US10381075B2Techniques to access a self-selecting memory deviceMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 13, 2019·28 cites·16 claims
- 2995US10163506B2Apparatuses including memory cells and methods of operation of sameMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 25, 2018·15 cites·18 claims
- 3095US10096655B1Three dimensional memory arrayMICRON TECHNOLOGY INC·Filed 2017·Granted Oct 9, 2018·12 cites·25 claims
- 3195US9806129B2Cross-point memory and methods for fabrication of sameMICRON TECHNOLOGY INC·Filed 2014·Granted Oct 31, 2017·14 cites·22 claims
- 3295US9768378B2Cross-point memory and methods for fabrication of sameMICRON TECHNOLOGY INC·Filed 2014·Granted Sep 19, 2017·11 cites·12 claims
- 3395US9299747B1Electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniquesINTEL CORP·Filed 2014·Granted Mar 29, 2016·19 cites·16 claims
- 3495US9224635B2Connections for memory electrode linesMICRON TECHNOLOGY INC·Filed 2013·Granted Dec 29, 2015·19 cites·22 claims
- 3595US8546231B2Memory arrays and methods of forming memory cellsPELLIZZER FABIO·Filed 2011·Granted Oct 1, 2013·21 cites·31 claims
- 3695US7135696B2Phase change memory with damascene memory elementINTEL CORP·Filed 2004·Granted Nov 14, 2006·67 cites·27 claims
- 3795US7122824B2Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereofOVONYX INC·Filed 2004·Granted Oct 17, 2006·136 cites·29 claims
- 3894US11664073B2Adaptively programming memory cells in different modes to optimize performanceMICRON TECHNOLOGY INC·Filed 2021·Granted May 30, 2023·3 cites·17 claims
- 3994US9460784B1Reference voltage generation apparatuses and methodsMICRON TECHNOLOGY INC·Filed 2015·Granted Oct 4, 2016·18 cites·21 claims
- 4094US8988926B2Method, system and device for phase change memory with shuntMICRON TECHNOLOGY INC·Filed 2013·Granted Mar 24, 2015·19 cites·32 claims
- 4194US7515460B2Multilevel programming of phase change memory cellsINTEL CORP·Filed 2006·Granted Apr 7, 2009·31 cites·9 claims
- 4293US11430509B2Varying-polarity read operations for polarity-written memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 30, 2022·3 cites·18 claims
- 4393US10803939B2Techniques for programming a memory cellMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 13, 2020·9 cites·18 claims
- 4493US10157670B2Apparatuses including memory cells and methods of operation of sameMICRON TECHNOLOGY INC·Filed 2016·Granted Dec 18, 2018·12 cites·28 claims
- 4593US9343506B2Memory arrays with polygonal memory cells having specific sidewall orientationsMICRON TECHNOLOGY INC·Filed 2014·Granted May 17, 2016·7 cites·15 claims
- 4693US8975148B2Memory arrays and methods of forming memory cellsMICRON TECHNOLOGY INC·Filed 2013·Granted Mar 10, 2015·8 cites·20 claims
- 4793US6816404B2Architecture of a phase-change nonvolatile memory arrayST MICROELECTRONICS SRL·Filed 2002·Granted Nov 9, 2004·91 cites·14 claims
- 4892US11729999B2Capacitive pillar architecture for a memory arrayMICRON TECHNOLOGY INC·Filed 2022·Granted Aug 15, 2023·1 cites·19 claims
- 4992US10446226B2Apparatuses including multi-level memory cells and methods of operation of sameMICRON TECHNOLOGY INC·Filed 2016·Granted Oct 15, 2019·11 cites·20 claims
- 5092US10263039B2Memory cells having resistors and formation of the sameMICRON TECHNOLOGY INC·Filed 2017·Granted Apr 16, 2019·6 cites·13 claims
Showing the top 50 of 339 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →