Mask and method for fabricating the same

Abstract

Present disclosure provides a mask and a method for fabricating a semiconductor device, the mask includes a target pattern having consecutive edges, a first scattering bar and a second scattering bar extending along a primary direction and adjacent to consecutive edges of the target pattern, wherein the first scattering bar and the second scattering bar partially overlaps in the primary direction, and a connecting segment connecting between a first end of the first scattering bar and a first end of the second scattering bar, wherein the first scattering bar is not parallel to the connecting segment.

What is claimed is: 
     
         1 . A mask, comprising:
 a target pattern having consecutive edges;   a first scattering bar and a second scattering bar extending along a primary direction and adjacent to consecutive edges of the target pattern, wherein the first scattering bar and the second scattering bar partially overlaps in the primary direction; and   a connecting segment connecting between a first end of the first scattering bar and a first end of the second scattering bar, wherein the first scattering bar is not parallel to the connecting segment.   
     
     
         2 . The mask of  claim 1 , wherein a total length of the connecting segment is shorter than a total length the first scattering bar. 
     
     
         3 . The mask of  claim 1 , wherein the second scattering bar is not parallel to the connecting segment. 
     
     
         4 . The mask of  claim 1 , wherein a second end of the first scattering bar opposite to the first end has a rounded corner. 
     
     
         5 . The mask of  claim 1 , wherein an upper angle is between the first scattering bar and the connecting segment, the upper angle is greater than 180 degree. 
     
     
         6 . The mask of  claim 1 , wherein a lower angle is between the first scattering bar and the connecting segment, the lower angle is less than 180 degree. 
     
     
         7 . The mask of  claim 1 , further comprising a third scattering bar connected to the second scattering bar, wherein the third scattering bar and the second scattering bar partially overlaps in the primary direction. 
     
     
         8 . The mask of  claim 1 , wherein a total area of the target pattern is greater than a total area of the first scattering bar. 
     
     
         9 . A mask, comprising:
 a target pattern having consecutive edges;   a first scattering bar and a second scattering bar extending along a primary direction and adjacent to consecutive edges of the target pattern, wherein a first edge of the first scattering bar and a second edge of the second scattering bar are not aligned in the primary direction; and   a connecting segment, wherein the first scattering bar is not parallel to the connecting segment.   
     
     
         10 . The mask of  claim 9 , wherein a total length of the connecting segment is shorter than a total length the first scattering bar. 
     
     
         11 . The mask of  claim 9 , wherein the second scattering bar is not parallel to the connecting segment. 
     
     
         9 . mask of  claim 9 , wherein a first end of the first scattering bar has a rounded corner. 
     
     
         13 . The mask of  claim 9 , wherein an upper angle is between the first scattering bar and the connecting segment, the upper angle is greater than 180 degree. 
     
     
         14 . The mask of  claim 9 , wherein a lower angle is between the first scattering bar and the connecting segment, the lower angle is less than 180 degree. 
     
     
         15 . The mask of  claim 9 , further comprising a third scattering bar connected to the second scattering bar, wherein the third scattering bar and the second scattering bar partially overlaps in the primary direction. 
     
     
         16 . The mask of  claim 9 , wherein a total area of the target pattern is greater than a total area of the first scattering bar, 
     
     
         17 . A method for fabricating a semiconductor device, the method comprising:
 forming a photo resist layer over a substrate;   exposing the photo resist layer with actinic radiation through a mask by using an optical lithography tool; and   developing the exposed photo resist layer to form a resist pattern, wherein the mask comprises:
 a target pattern having consecutive edges; 
 a first scattering bar and a second scattering bar extending along a primary direction and adjacent to consecutive edges of the target pattern, wherein the first scattering bar and the second scattering bar partially overlaps in the primary direction; and 
 a connecting segment connecting between the first scattering bar and the second. scattering bar, wherein the first scattering bar is not parallel to the connecting segment. 
   
     
     
         18 . The method of  claim 17 , wherein a total length of the connecting segment is shorter than a total length the first scattering bar. 
     
     
         17 . The method of  claim 17 , wherein the second scattering bar is not parallel to the connecting segment. 
     
     
         20 . The method of  claim 17 , wherein an upper angle is between the first scattering bar and the connecting segment, wherein the upper angle is greater than 180 degree.