US2022115296A1PendingUtilityA1
Semiconductor device, manufacturing method for semiconductor device, electronic component, circuit substrate, and electronic apparatus
Assignee: ADVANCED INTERCONNECT SYSTEMS LTDPriority: Jun 8, 2005Filed: Dec 20, 2021Published: Apr 14, 2022
Est. expiryJun 8, 2025(expired)· nominal 20-yr term from priority
H10W 72/9415H10W 72/9226H10W 72/07251H10W 72/953H10W 72/952H10W 72/942H10W 72/923H10W 72/922H10W 72/20H10W 72/00H10W 20/484H10W 20/40H10W 20/0234H10W 20/0242H10W 72/9445H10W 70/655H10W 20/20H10W 76/10H03H 9/0552H03H 9/1071H03H 9/0547H01L 2924/01019H01L 2224/05655H01L 2224/05671H01L 2224/05548H01L 2224/05686H01L 2224/05624H01L 2224/05666H01L 23/50H01L 2224/05001H01L 2224/05025H01L 2224/05184H01L 2224/05144H01L 2224/05124H01L 2224/05022H01L 23/4824H01L 2224/05155H01L 2224/05171H01L 2924/12042H01L 2224/05644H01L 23/481H01L 2224/05664H01L 2224/05166H01L 24/12H01L 2224/05684H01L 2224/05186H01L 2224/05027H01L 2224/05147H01L 2224/05009H01L 2224/05647H01L 2224/05164H01L 23/522
79
PatentIndex Score
0
Cited by
0
References
0
Claims
Abstract
A semiconductor device includes an integrated circuit that is disposed at a first face side of a semiconductor substrate, the semiconductor substrate having a first face and a second face, the second face opposing the first face, the semiconductor substrate having a through hole from the first face to the second face; an external connection terminal that is disposed at the first face side; a conductive portion that is disposed in the through hole, the conductive portion being electrically connected to the external connection terminal; and an electronic element that is disposed at a second face side.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A device comprising:
a silicon substrate including a first face and a second face on a side opposite to the first face; a first electrode formed on the first face of the silicon substrate; a second electrode formed on the first face of the silicon substrate; an integrated circuit being electrically connected to the first electrode and the second electrode; a rear face electrode formed on the second face of the silicon substrate; a groove portion formed in the silicon substrate; an insulating film formed on side walls of the groove portion; a conductive portion formed inside the groove portion on the insulating portion, the conductive portion being electrically connected to the second electrode and the rear face electrode; a second silicon substrate including a second silicon substrate first face and a second silicon substrate second face on a side opposite to the second semiconductor first face; and an electronic element formed on the first face of the second silicon substrate, the electronic element being electrically connected to the rear face electrode; wherein the integrated circuit is configured to apply a voltage to the electronic element via the second electrode and conductive portion; and wherein the first electrode, the integrated circuit, the second electrode, the conductive portion, the rear face electrode and the electronic element are electrically connected in that order.Cited by (0)
No later patents cite this yet.
References (0)
No backward citations on record.