Silicon carbide ingot manufacturing method and silicon carbide ingot manufactured thereby

Abstract

A silicon carbide ingot manufacturing method and a silicon carbide ingot manufacturing system are provided. The silicon carbide ingot manufacturing method and the silicon carbide ingot manufacturing system may change a temperature gradient depending on the growth of an ingot by implementing a guide which has a tilted angle to an external direction from the interior of a reactor, in an operation to grow an ingot during a silicon carbide ingot manufacturing process.

What is claimed is: 
     
         1 . A silicon carbide ingot, comprising:
 a front region and a rear region which is an opposite surface of the front region,   wherein the rear region is a surface cut from a silicon carbide seed crystal,   wherein the silicon carbide ingot comprises a maximum height equal to or greater than 15 mm in a direction perpendicular to the rear region,   wherein the silicon carbide ingot has a ratio, Df/Db, of 0.95 to 1.17, wherein Db is a diameter of the rear region and Df is a diameter of a circumference of the front region,   wherein the silicon carbide ingot has an angle of −4° to 50° between a line perpendicular to the rear region from one side of the circumference of the rear region, and an edge line linking one side of the front region, which is close to the one side of the circumference of the rear region, from a plane comprising the line perpendicular to the rear region from one side of the circumference of the rear region and the diameter of the rear region.   
     
     
         2 . The silicon carbide ingot of  claim 1 , wherein the silicon carbide ingot manufactured by the silicon carbide ingot manufacturing device comprises a front region and a rear region which is an opposite surface front region,
 wherein the rear region is a surface cut from a silicon carbide seed crystal,   wherein the silicon carbide ingot has a maximum height equal to or greater than 15 mm in a perpendicular direction to the rear region,   wherein the silicon carbide ingot has a ratio, Df/Db, of 0.95 to 1.17, wherein Db is a diameter of the rear region, and the Df is a diameter of the circumference of the front region, and   wherein the silicon carbide ingot has an angle of −4° to 50° between a line perpendicular to the rear region from one side of the circumference of the rear region, and an edge line linking one side of the front region which is close to the one side of the circumference of the rear region from a plane comprising the line perpendicular to the rear region from one side of the circumference of the rear region and a diameter of the rear region.   
     
     
         3 . The silicon carbide ingot of  claim 1 , wherein the angle of inclination of the guide is 4° to 25°. 
     
     
         4 . The silicon carbide ingot of  claim 1 , wherein the guide that surrounds the circumferential surface of the silicon carbide seed crystal has a height equal to or greater that 30 mm, based on a direction connecting one side of the silicon carbide seed crystal and the silicon carbide raw material in a shortest distance.