Plasma etching system

Abstract

Disclosed is a plasma etching system, comprising a reaction chamber, a base located in the reaction chamber and used for bearing a workpiece, and a dielectric window located on the reaction chamber. Flat plate type electrodes and coil electrodes are provided on the outer surface of the dielectric window; the flat plate type electrodes are located right over the base, and the coil electrodes are arranged in the peripheral regions of the flat plate type electrodes in a surrounding manner; a Faraday shielding layer is further provided between the coil electrodes and the outer surface of the dielectric window.

1 . A plasma etching system, comprising a reaction chamber, a base located in the reaction chamber and used for bearing a workpiece, and a dielectric window located on the reaction chamber, wherein flat plate electrodes and coil electrodes are provided on an outer surface of the dielectric window; the flat plate electrodes are located right over the base; the coil electrodes are arranged in a peripheral region of the flat plate electrodes in a surrounding manner; and a Faraday shielding layer is further provided between the coil electrodes and the outer surface of the dielectric window. 
     
     
         2 . The plasma etching system according to  claim 1 , wherein a size of the flat plate electrode is ½ to 1 of a size of the workpiece. 
     
     
         3 . The plasma etching system according to  claim 1 , wherein the coil electrode is a vertical conical coil. 
     
     
         4 . The plasma etching system according to  claim 3 , wherein the coil electrode consists of a plurality of coupled vertical conical coils. 
     
     
         5 . The plasma etching system according to  claim 1 , further comprising a radio frequency power supply, a radio frequency matcher, and a radio frequency power distribution box; and radio frequency power of the radio frequency power supply is distributed and connected to the flat plate electrode and the coil electrode by the radio frequency power distribution box through the radio frequency matcher. 
     
     
         6 . The plasma etching system according to  claim 1 , wherein the plasma etching system further comprises a coil radio frequency power supply and a coil radio frequency matcher; and radio frequency power of the coil radio frequency power supply is connected to the coil electrode through the coil radio frequency matcher; and
 the plasma etching system further comprises a flat plate radio frequency power supply and a flat plate radio frequency matcher; and radio frequency power of the flat plate radio frequency power supply is connected to the flat plate electrode through the flat plate radio frequency matcher.