Light emitting devices and arrays with n-layer pockets

Abstract

Techniques, devices, and systems are disclosed and include LEDs with a first flat region, at a first height from an LED base and including a plurality of epitaxial layers including a first n-layer, a first active layer, and a first p-layer. A second flat region is provided, at a second height from the LED base and parallel to the first flat region, and includes at least a second n-layer. A sloped sidewall connecting the first flat region and the second flat region is provided and includes at least a third n-layer, the first n-layer being thicker than at least a portion of third n-layer. A p-contact is formed on the first p-layer and an n-contact formed on the second n-layer.

What is claimed is: 
     
         1 . A light emitting diode (LED) device comprising:
 a pocket defined by surfaces of an n-layer comprising a primary n-layer flat region and an n-layer sloped region, a thickness of the n-layer sloped region being less than a thickness of the primary n-layer flat region;   an active layer adjacent to n-layer;   a p-layer adjacent to the active layer;   a p-contact in contact with a primary p-layer flat region of the p-layer; and   an n-contact in contact with the n-layer and isolated from the p-contact.   
     
     
         2 . The LED device of  claim 1 , wherein the pocket is exposed upon removal of a growth substrate. 
     
     
         3 . The LED device of  claim 1 , wherein surfaces of the pocket comprise submicron patterning. 
     
     
         4 . The LED device of  claim 1 , wherein the thickness of the n-layer sloped region is less than 80% of the thickness of the primary n-layer flat region. 
     
     
         5 . The LED device of  claim 1 , wherein the active layer comprises a thickness adjacent to the n-layer sloped region that is less than 80% of a thickness adjacent to the primary n-layer flat region. 
     
     
         6 . The LED device of  claim 1 , wherein the p-layer comprises a thickness adjacent to the n-layer sloped region that is less than 80% of a thickness adjacent to the primary n-layer flat region. 
     
     
         7 . The LED device of  claim 1  further comprising a light-converting phosphor material in the pocket. 
     
     
         8 . The LED device of  claim 1  further comprising a high-refractive index material in the pocket. 
     
     
         9 . The LED device of  claim 1 , wherein the n-layer further comprises a secondary n-layer flat region such that the n-layer sloped region extends from the primary n-layer flat region to the secondary n-layer flat region. 
     
     
         10 . The LED device of  claim 1  having at least one characteristic dimension of less than 100 micrometers, the character dimension being selected from the group consisting of: height, width, depth, thickness, and combinations thereof. 
     
     
         11 . An array of light emitting diodes (LEDs) comprising: a plurality of LED devices according to  claim 1  attached to a backplane. 
     
     
         12 . The array  claim 11 , wherein the backplane is a thin film transistor (TFT) backplane. 
     
     
         13 . The array of  claim 11 , wherein the backplane is configured to individually address each of the plurality of LED devices. 
     
     
         14 . The array of  claim 11 , wherein at least one of the following is adjustable: a color temperature, an intensity, or a source pattern. 
     
     
         15 . The array of  claim 11  effective as a thin film flip chip (TFFC) array. 
     
     
         16 . The array of  claim 11  effective as a vertical injection thin film (VTF) array. 
     
     
         17 . A method of preparing an array comprising a plurality of light emitting diode (LED) devices, the method comprising:
 epitaxially forming a continuous n-layer on a growth substrate, the n-layer having a primary n-layer flat region and an n-layer sloped region, a thickness of the n-layer sloped region being less than a thickness of the primary n-layer flat region;   epitaxially forming a continuous active layer adjacent to a portion of the n-layer,   epitaxially forming a continuous p-layer adjacent to a portion of active layer,   preparing a plurality of n-contacts in contact with the n-layer;   preparing a plurality of p-contacts in contact with the p-layer;   isolating the n-contacts from the p-contacts; and   removing the growth substrate to form a plurality of pockets defined by surfaces of the primary n-layer flat region and the n-layer sloped region.   
     
     
         18 . The method of  claim 17  further comprising patterning surfaces of the pockets. 
     
     
         19 . The method of  claim 17  further comprising depositing a light-converting phosphor material or a high-refractive index material in the pockets. 
     
     
         20 . The method of  claim 17 , wherein the LED devices have at least one characteristic dimension of less than 100 micrometers, the character dimension being selected from the group consisting of: height, width, depth, thickness, and combinations thereof.