Inventor · disambiguated record
Sungsoo Yi
Also filed as: YI SUNGSOO
28 granted patents·21 pending applications·176 citations·filing 2004–2025
95Inventor score
Top patents by PatentIndex Score
49 records- 0198US9281442B2III-nitride nanowire LED with strain modified surface active region and method of making thereofGLO AB·Filed 2014·Granted Mar 8, 2016·46 cites·54 claims
- 0297US10964845B2Micro light emitting devicesLUMILEDS LLC·Filed 2019·Granted Mar 30, 2021·21 cites·23 claims
- 0397US10811460B2Micrometer scale light emitting diode displays on patterned templates and substratesLUMILEDS HOLDING BV·Filed 2018·Granted Oct 20, 2020·18 cites·20 claims
- 0496US11404604B2Pixel of micro display having vertically stacked sub-pixels and common electrodeSUNDIODE KOREA·Filed 2020·Granted Aug 2, 2022·3 cites·24 claims
- 0593US10923628B2Micrometer scale light emitting diode displays on patterned templates and substratesLUMILEDS LLC·Filed 2019·Granted Feb 16, 2021·12 cites·23 claims
- 0693US7357018B2Method for performing a measurement inside a specimen using an insertable nanoscale FET probeAGILENT TECHNOLOGIES INC·Filed 2006·Granted Apr 15, 2008·27 cites·8 claims
- 0789US11437544B2Pixel for micro display and method of manufacturing the sameSUNDIODE KOREA·Filed 2020·Granted Sep 6, 2022·2 cites·22 claims
- 0888US9035278B2Coalesced nanowire structures with interstitial voids and method for manufacturing the sameGLO AB·Filed 2012·Granted May 19, 2015·8 cites·4 claims
- 0986US11611016B2Pixel of micro display having inclined sideSUNDIODE KOREA·Filed 2021·Granted Mar 21, 2023·1 cites·10 claims
- 1085US9570651B2Coalesced nanowire structures with interstitial voids and method for manufacturing the sameGLO AB·Filed 2015·Granted Feb 14, 2017·4 cites·6 claims
- 1184US9761757B2III-nitride nanowire LED with strain modified surface active region and method of making thereofGLO AB·Filed 2016·Granted Sep 12, 2017·3 cites·20 claims
- 1284US7663148B2III-nitride light emitting device with reduced strain light emitting layerPHILIPS LUMILEDS LIGHTING CO·Filed 2006·Granted Feb 16, 2010·10 cites·15 claims
- 1380US7629532B2Solar cell having active region with nanostructures having energy wellsSUNDIODE INC·Filed 2006·Granted Dec 8, 2009·6 cites·33 claims
- 1479US11735691B2Micro light emitting devicesLUMILEDS LLC·Filed 2021·Granted Aug 22, 2023·0 cites·22 claims
- 1579US8476637B2Nanostructure optoelectronic device having sidewall electrical contactKIM JAMES C·Filed 2010·Granted Jul 2, 2013·6 cites·34 claims
- 1679US2022328721A1Light emitting devices and arrays with pocketsLUMILEDS LLC·Filed 2022·Application pending·0 cites
- 1779US2022320373A1Light emitting devices and arrays with semi-conductor layer pocketsLUMILEDS LLC·Filed 2022·Application pending·0 cites
- 1879US2022320372A1Light emitting devices and arrays with n-layer pocketsLUMILEDS LLC·Filed 2022·Application pending·0 cites
- 1977US8431817B2Multi-junction solar cell having sidewall bi-layer electrical interconnectKIM JAMES C·Filed 2010·Granted Apr 30, 2013·3 cites·14 claims
- 2076US8659037B2Nanostructure optoelectronic device with independently controllable junctionsKIM JAMES C·Filed 2010·Granted Feb 25, 2014·4 cites·15 claims
- 2175US11201265B2Micro light emitting devicesLUMILEDS LLC·Filed 2020·Granted Dec 14, 2021·0 cites·20 claims
- 2274US11271033B2Micro light emitting devicesLUMILEDS LLC·Filed 2020·Granted Mar 8, 2022·0 cites·19 claims
- 2367US12250840B2Unit pixel for red-green-cyan-blue (RGCB) micro-display having vertically stacked sub-pixelsSUNDIODE KOREA·Filed 2022·Granted Mar 11, 2025·0 cites·19 claims
- 2467US8105852B2Method of forming a composite substrate and growing a III-V light emitting device over the composite substrateGARDNER NATHAN F·Filed 2010·Granted Jan 31, 2012·2 cites·10 claims
- 2564US2024405056A1Vertically-stacked rgb micro-light-emitting diode having corner mesa contact structures and manufacturing method thereofSUNDIODE KOREA·Filed 2024·Application pending·0 cites
- 2664US2024405162A1Rgb micro-light-emitting diode having vertically-stacked structure with corner mesa contact structures and manufacturing method thereofSUNDIODE KOREA·Filed 2024·Application pending·0 cites
- 2764US2025098367A1Red light-emitting diodeSUNDIODE KOREA·Filed 2024·Application pending·0 cites
- 2861US2010047957A1Method for forming solar cell having active region with nanostructures having energy wellsKIM JAMES C·Filed 2009·Application pending·0 cites
- 2960US10312404B2Semiconductor light emitting device growing active layer on textured surfaceLUMILEDS LLC·Filed 2018·Granted Jun 4, 2019·0 cites·5 claims
- 3058US10026866B2III-nitride nanowire LED with strain modified surface active region and method of making thereofGLO AB·Filed 2017·Granted Jul 17, 2018·0 cites·20 claims
- 3158US2023420623A1Pixel of microdisplay having integrated catadioptric light extraction systemSUNDIODE KOREA·Filed 2022·Application pending·0 cites
- 3257US12262569B2Pixel for micro-display having vertically stacked sub-pixelsSUNDIODE KOREA·Filed 2022·Granted Mar 25, 2025·0 cites·13 claims
- 3354US8183577B2Controlling pit formation in a III-nitride deviceYI SUNGSOO·Filed 2009·Granted May 22, 2012·0 cites·13 claims
- 3453US2017170261A1Coalesced nanowire structures with interstitial voids and method for manufacturing the sameGLO AB·Filed 2017·Application pending·0 cites
- 3551US2010236617A1Stacked Structure Solar Cell Having Backside Conductive ContactsSUNDIODE INC·Filed 2009·Application pending·0 cites
- 3651US2008149946A1Semiconductor Light Emitting Device Configured To Emit Multiple Wavelengths Of LightPHILIPS LUMILEDS LIGHTING CO·Filed 2006·Application pending·0 cites
- 3750US9012250B2Controlling pit formation in a III-nitride deviceYI SUNGSOO·Filed 2012·Granted Apr 21, 2015·0 cites·15 claims
- 3849US2025255065A1Unit sub-pixel structure of micro-led and method of manufacturing the sameSUNDIODE INC·Filed 2025·Application pending·0 cites
- 3948US9911896B2Semiconductor light emitting device growing active layer on textured surfaceYI SUNGSOO·Filed 2010·Granted Mar 6, 2018·0 cites·8 claims
- 4048US9806111B2Nanostructure optoelectronic device with independently controllable junctionsSUNDIODE INC·Filed 2014·Granted Oct 31, 2017·0 cites·13 claims
- 4148US2007114387A1Matrix assisted laser desorption ionization (MALDI) support structures and methods of making MALDI support structuresCHANG YING-LAN·Filed 2006·Application pending·0 cites
- 4243US2007037365A1Semiconductor nanostructures and fabricating the sameRANGANATH TIRUMALA R·Filed 2005·Application pending·0 cites
- 4341US2006225162A1Method of making a substrate structure with enhanced surface areaYI SUNGSOO·Filed 2005·Application pending·0 cites
- 4440US2006084570A1System and method for growing nanostructures from a periphery of a catalyst layerKOPLEY THOMAS E·Filed 2005·Application pending·0 cites
- 4540US2005265648A1Evanescent wave sensor containing nanostructures and methods of using the sameROITMAN DANIEL·Filed 2004·Application pending·0 cites
- 4639US2007155184A1Method for producing a nanostructure such as a nanoscale cantileverYI SUNGSOO·Filed 2005·Application pending·0 cites
- 4736US2007186629A1Functionalizable nanowire-based AFM probeCHANG YING-LAN·Filed 2006·Application pending·0 cites
- 4835US2012025169A1Nanostructure array transistorMARS DANNY E·Filed 2010·Application pending·0 cites
- 4934US2007186627A1High aspect ratio AFM probe and method of makingYI SUNGSOO·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →