Light emitting devices and arrays with semi-conductor layer pockets

Abstract

Techniques, devices, and systems are disclosed and include LEDs with a first flat region, at a first height from an LED base and including a plurality of epitaxial layers including a first n-layer, a first active layer, and a first p-layer. A second flat region is provided, at a second height from the LED base and parallel to the first flat region, and includes at least a second n-layer. A sloped sidewall connecting the first flat region and the second flat region is provided and includes at least a third n-layer, the first n-layer being thicker than at least a portion of third n-layer. A p-contact is formed on the first p-layer and an n-contact formed on the second n-layer.

What is claimed is: 
     
         1 . A light emitting diode (LED) device comprising:
 a pocket defined by surfaces of a continuous epitaxial layer having at least a primary flat region, a sloped region, and a pinch-off zone within the sloped region, the continuous epitaxial layer comprising an n-layer, a p-layer, and an active layer between the n-layer and the p-layer;   a p-contact in contact with the p-layer; and   an n-contact in contact with the n-layer and isolated from the p-contact.   
     
     
         2 . The LED device of  claim 1 , wherein the pocket is exposed upon removal of a growth substrate. 
     
     
         3 . The LED device of  claim 1 , wherein surfaces of the pocket comprise submicron patterning. 
     
     
         4 . The LED device of  claim 1 , wherein a thickness of the n-layer in the sloped region is less than 80% of a thickness of the n-layer in the primary flat region. 
     
     
         5 . The LED device of  claim 1 , wherein a thickness of the active layer in the sloped region is less than 80% of a thickness of the active layer in the primary flat region. 
     
     
         6 . The LED device of  claim 1 , wherein a thickness of the p-layer in the sloped region is less than 80% of a thickness of the p-layer on the primary flat region. 
     
     
         7 . The LED device of  claim 1  further comprising a light-converting phosphor material in the pocket. 
     
     
         8 . The LED device of  claim 1  further comprising a high-refractive index material in the pocket. 
     
     
         9 . The LED device of  claim 1 , wherein the continuous epitaxial layer further comprises a secondary flat region such that the sloped region extends from the primary flat region to the secondary flat region. 
     
     
         10 . The LED device of  claim 1  having at least one characteristic dimension of less than 100 micrometers, the character dimension being selected from the group consisting of: height, width, depth, thickness, and combinations thereof. 
     
     
         11 . An array of light emitting diodes (LEDs) comprising: a plurality of LED devices according to  claim 1  attached to a backplane. 
     
     
         12 . The array  claim 11 , wherein the backplane is a thin film transistor (TFT) backplane. 
     
     
         13 . The array of  claim 11 , wherein the backplane is configured to individually address each of the plurality of LED devices. 
     
     
         14 . The array of  claim 11 , wherein at least one of the following is adjustable: a color temperature, an intensity, or a source pattern. 
     
     
         15 . The array of  claim 11  effective as a thin film flip chip (TFFC) array. 
     
     
         16 . The array of  claim 11  effective as a vertical injection thin film (VTF) array. 
     
     
         17 . A method of preparing an array comprising a plurality of light emitting diode (LED) devices, the method comprising:
 epitaxially forming a continuous epitaxial layer on a growth substrate, the continuous epitaxial layer having a primary flat region, a sloped region, and a pinch-off zone within the sloped region, the continuous epitaxial layer comprising an n-layer, a p-layer, and an active layer between the n-layer and the p-layer;   preparing a plurality of n-contacts in contact with the n-layer;   preparing a plurality of p-contacts in contact with the p-layer;   isolating the n-contacts from the p-contacts; and   removing the growth substrate to form a plurality of pockets defined by surfaces of the primary flat region and the sloped region.   
     
     
         18 . The method of  claim 17  further comprising patterning surfaces of the pockets. 
     
     
         19 . The method of  claim 17  further comprising depositing a light-converting phosphor material or a high-refractive index material in the pockets. 
     
     
         20 . The method of  claim 17 , wherein the LED devices have at least one characteristic dimension of less than 100 micrometers, the character dimension being selected from the group consisting of: height, width, depth, thickness, and combinations thereof.