Semiconductor device and method for fabricating the same

Abstract

A semiconductor device includes a first metal interconnection on a substrate, a first inter-metal dielectric (IMD) layer around the first metal interconnection, an electromigration enhancing layer on the first metal interconnection, a second IMD layer on and around the electromigration enhancing layer, and a second metal interconnection on the electromigration enhancing layer.

What is claimed is: 
     
         1 . A semiconductor device, comprising:
 a first metal interconnection on a substrate;   a first inter-metal dielectric (IMD) layer around the first metal interconnection;   an electromigration enhancing layer on the first metal interconnection;   a second IMD layer on and around the electromigration enhancing layer; and   a second metal interconnection on the electromigration enhancing layer.   
     
     
         2 . The semiconductor device of  claim 1 , further comprising:
 a third metal interconnection on the electromigration enhancing layer;   the second IMD layer around the second metal interconnection and the third metal interconnection;   a first magnetic tunneling junction (MTJ) on the second metal interconnection; and   a second MTJ on the third metal interconnection.   
     
     
         3 . The semiconductor device of  claim 1 , where bottom surfaces of the electromigration enhancing layer and the second IMD layer are coplanar. 
     
     
         4 . The semiconductor device of  claim 1 , wherein a sidewall of the electromigration enhancing layer comprises a planar sidewall. 
     
     
         5 . The semiconductor device of  claim 1 , wherein a sidewall of the electromigration enhancing layer is orthogonal to a top surface of the first IMD layer. 
     
     
         6 . The semiconductor device of  claim 1 , wherein a sidewall of the electromigration enhancing layer is orthogonal to a top surface of the first metal interconnection. 
     
     
         7 . The semiconductor device of  claim 1 , wherein the first metal interconnection and the second metal interconnection comprise different materials. 
     
     
         8 . The semiconductor device of  claim 1 , wherein the first metal interconnection and the electromigration enhancing layer comprise different materials. 
     
     
         9 . The semiconductor device of  claim 1 , wherein the second metal interconnection and the electromigration enhancing layer comprise different materials.