Integrated preclean-deposition system for optical films

Abstract

Embodiments of the present disclosure generally relate to optical devices. More specifically, embodiments described herein relate to a system and method of forming an optical device film. In an embodiment, a method is provided for positioning a substrate in a pre-cleaning chamber disposed in a cluster processing system and pre-cleaning the substrate to remove a native oxide layer from one or more surfaces of the substrate. The substrate is then transferred in an air free state to a deposition chamber disposed in the cluster processing system for forming an optical device film layer on the substrate.

What is claimed is: 
     
         1 . A method for forming an optical device film, comprising:
 pre-cleaning a substrate in a pre-cleaning chamber disposed in a cluster processing system to remove a native oxide layer from a top surface of the substrate;   transferring the substrate to a deposition chamber disposed in the cluster processing system while maintaining the substrate in an air free state; and   forming an optical device film layer on the top surface of the substrate in the deposition chamber disposed in the cluster processing system.   
     
     
         2 . The method of  claim 1 , wherein the substrate comprises a silicon carbide (SiC) substrate. 
     
     
         3 . The method of  claim 1 , wherein the native oxide layer comprises a silicon oxycarbide (SiOC) layer. 
     
     
         4 . The method of  claim 2 , wherein pre-cleaning the silicon carbide substrate further comprises heating and maintaining the silicon carbide substrate temperature between about 400 degrees Celsius and about 1500 degrees Celsius. 
     
     
         5 . The method of  claim 1 , wherein pre-cleaning the substrate further comprises maintaining a pressure of about 100 mT to atmospheric pressure in the pre-cleaning chamber disposed in the cluster processing system. 
     
     
         6 . The method of  claim 1 , wherein pre-cleaning the substrate further comprises removing a second native oxide layer from a bottom surface of the substrate. 
     
     
         7 . The method of  claim 1 , wherein maintaining the substrate in an air free state comprises maintaining the substrate in an high vacuum environment at a pressure of about 100 mT or less. 
     
     
         8 . The method of  claim 1 , wherein maintaining the substrate in the air free state comprises flowing an inert gas when transferring the substrate between the pre-cleaning chamber and the deposition chamber. 
     
     
         9 . The method of  claim 1 , wherein maintaining the substrate in the air free state when transferring the substrate between the pre-cleaning chamber and the deposition chamber prevents oxide growth on the top surface of the substrate. 
     
     
         10 . A method for forming an optical device film, comprising:
 positioning a SiC substrate in a pre-cleaning chamber of a cluster processing system;   pre-cleaning the SiC substrate in the pre-cleaning chamber disposed in a cluster processing system to remove a native SiOC layer from one or more surfaces of the SiC substrate;   transferring the SiC substrate to a deposition chamber disposed in the cluster processing system while maintaining the SiC substrate in an air free state to prevent oxide growth on the one or more surfaces of the SiC substrate; and   forming an optical device film layer on the one or more surfaces of the SiC substrate in the deposition chamber disposed in the cluster processing system.   
     
     
         11 . The method of  claim 10 , wherein pre-cleaning the SiC substrate further comprises heating and maintaining the SiC substrate temperature between about 400 degrees Celsius and about 1500 degrees Celsius. 
     
     
         12 . The method of  claim 10 , wherein maintaining the SiC substrate in an air free state comprises maintaining the SiC substrate in an high vacuum environment at a pressure of about 100 mT or less. 
     
     
         13 . The method of  claim 10 , wherein maintaining the SiC substrate in an air free state comprises flowing an inert gas when transferring the substrate between the pre-cleaning chamber and the deposition chamber. 
     
     
         14 . A cluster processing system, comprising:
 a pre-cleaning chamber configured to remove a native oxide layer;   a deposition chamber configured to form an optical device film layer; and   a transfer chamber configured to maintain an air free environment when transitioning between the pre-cleaning chamber and the first deposition chamber.   
     
     
         15 . The cluster processing system of  claim 14 , further comprising a computer readable media, when executed by a controller of the cluster processing system, causes the cluster processing system to:
 pre-clean a substrate in a pre-cleaning chamber disposed in the cluster processing system to remove the native oxide layer from one or more surfaces of the substrate;   transfer the substrate to a deposition chamber disposed in the cluster processing system while maintaining the substrate in an air free state; and   form an optical device film layer on the substrate in the deposition chamber disposed in the cluster processing system.   
     
     
         16 . The cluster processing system of  claim 15 , wherein the substrate comprises a silicon carbide substrate and the native oxide layer comprises a silicon oxycarbide layer. 
     
     
         17 . The cluster processing system of  claim 16 , wherein the pre-cleaning chamber is configured to heat and maintain the silicon carbide substrate temperature between about 400 degrees Celsius and about 1500 degrees Celsius. 
     
     
         18 . The cluster processing system of  claim 15 , wherein the pre-cleaning chamber is configured to maintain the substrate in a pressure of about 100 mT to atmospheric pressure. 
     
     
         19 . The cluster processing system of  claim 15 , wherein the transfer chamber is configured to maintain the substrate in an high vacuum environment at a pressure of about 100 mT or less. 
     
     
         20 . The cluster processing system of  claim 14 , wherein the transfer chamber is configured to flow an inert gas to maintain an air free environment when transitioning between the pre-cleaning chamber and the first deposition chamber in the cluster processing system.