US2023114349A1PendingUtilityA1
Etching method, semiconductor manufacturing apparatus, and method of manufacturing semiconductor device
Est. expiryJul 18, 2039(~13 yrs left)· nominal 20-yr term from priority
H10P 72/0421H10P 70/23H10P 50/283H10P 50/73H10B 43/27H01J 37/32449H01J 2237/334H01J 37/32082H01J 2237/002H01J 37/32724H10B 41/27H01J 2237/3341H01J 37/32174H01L 21/67069H01L 21/0206H01L 21/31116H01L 27/11556
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Claims
Abstract
An etching method according to one embodiment, includes alternately switching a first step and a second step. The first step introduces a first gas containing a fluorine atom without supplying radiofrequency voltage to form a surface layer on a surface of a target cooled at a temperature equal to or lower than a liquefaction temperature of the first gas. The second step introduces a second gas gaseous at the first temperature and different from the first gas, and supplies the radiofrequency voltage, to generate plasma from the second gas to etch the target by sputtering using the plasma.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . An etching method comprising
alternately switching a first step and a second step, the first step introducing a first gas containing a fluorine atom without supplying a radiofrequency voltage to form a surface layer on a surface of a target cooled at a temperature equal to or lower than the liquefaction temperature of the first gas; and the second step introducing a second gas gaseous at the first temperature and different from the first gas, and supplying the radiofrequency voltage to generate plasma from the second gas and thus etch the target by sputtering using the plasma.Join the waitlist — get patent alerts
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