US2023147486A1PendingUtilityA1

Integrated freewheeling diode and extraction device

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Assignee: MW RF SEMICONDUCTORS LLCPriority: Oct 19, 2020Filed: Dec 29, 2022Published: May 11, 2023
Est. expiryOct 19, 2040(~14.3 yrs left)· nominal 20-yr term from priority
Inventors:Dumitru Sdrulla
H10W 90/00H10W 72/50H10D 84/811H10D 84/401H10D 12/441H10D 8/60H10D 8/50H10D 8/411H10D 12/032H10D 64/01H10D 62/8325H10D 62/393H10D 62/106H10D 84/83H10D 84/856H10D 84/403H10D 89/813H10D 84/0186H10D 84/038H10D 84/017H10D 89/921H01L 27/0292H01L 29/872H01L 29/7395H01L 29/868H01L 27/0623H01L 27/0629
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Claims

Abstract

A Freewheeling Diode of any kind (Fast Recovery Diode, Schottky Barrier Diode or other variants) is integrated with a Forced Extraction Device and in this way two entirely different functions—the Free-Wheeling function and the Forced Extraction function are combined in one device, simplifying the circuit and reducing the number of components. The FWD part of the integrated device is standard in the industry, but the Forced Extraction Device is made using a lateral or vertical PMOS with a votage capability between a control input and the output terminals that is as high or higher than the rating voltage of the Main Switch that will be used together with the FWD.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
         1 . A semiconductor device formed on a semiconductor substrate, the semiconductor having a first, second, third, and fourth terminals, the semiconductor device comprising:
 a freewheeling diode coupled between the first and second terminals; and   an Extraction Device structured to be coupled to a conductivity modulation switch device through the third terminal, the Extraction Device further coupled to the second terminal and the fourth terminal.

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