Inventor · disambiguated record
Dumitru Sdrulla
Also filed as: SDRULLA DUMITRU · SDRULLA DUMITRU G · SDRULLA DUMITRU GHEORGE
23 granted patents·10 pending applications·464 citations·filing 1994–2024
95Inventor score
Files withANALOG POWER CONV LLC11MICROSEMI CORP10MW RF SEMICONDUCTORS LLC4ADVANCED POWER TECHNOLOGY3SDRULLA DUMITRU3
Top patents by PatentIndex Score
33 records- 0197US7851881B1Schottky barrier diode (SBD) and its off-shoot merged PN/Schottky diode or junction barrier Schottky (JBS) diodeMICROSEMI CORP·Filed 2009·Granted Dec 14, 2010·87 cites·33 claims
- 0293US8436367B1SiC power vertical DMOS with increased safe operating areaSDRULLA DUMITRU·Filed 2011·Granted May 7, 2013·29 cites·19 claims
- 0393US5648283AHigh density power device fabrication process using undercut oxide sidewallsADVANCED POWER TECHNOLOGY·Filed 1994·Granted Jul 15, 1997·167 cites·34 claims
- 0490US11830943B2RF SiC MOSFET with recessed gate dielectricANALOG POWER CONV LLC·Filed 2021·Granted Nov 28, 2023·2 cites·24 claims
- 0589US11764209B2Power semiconductor device with forced carrier extraction and method of manufactureMW RF SEMICONDUCTORS LLC·Filed 2021·Granted Sep 19, 2023·2 cites·17 claims
- 0686US5528058AIGBT device with platinum lifetime control and reduced gawADVANCED POWER TECHNOLOGY·Filed 1994·Granted Jun 18, 1996·111 cites·9 claims
- 0784US8674439B2Low loss SiC MOSFETSDRULLA DUMITRU·Filed 2011·Granted Mar 18, 2014·8 cites·9 claims
- 0882US8476691B1High reliability-high voltage junction termination with charge dissipation layerSDRULLA DUMITRU·Filed 2011·Granted Jul 2, 2013·14 cites·19 claims
- 0978US10811494B2Method and assembly for mitigating short channel effects in silicon carbide MOSFET devicesMICROSEMI CORP·Filed 2018·Granted Oct 20, 2020·2 cites·15 claims
- 1073US2023420449A1Power semiconductor device with forced carrier extraction and method of manufactureMW RF SEMICONDUCTORS LLC·Filed 2023·Application pending·0 cites
- 1172US9478606B2SiC transient voltage suppressorMICROSEMI CORP·Filed 2015·Granted Oct 25, 2016·2 cites·16 claims
- 1272US9040377B2Low loss SiC MOSFETMICROSEMI CORP·Filed 2013·Granted May 26, 2015·3 cites·11 claims
- 1370US7169634B2Design and fabrication of rugged FREDADVANCED POWER TECHNOLOGY·Filed 2004·Granted Jan 30, 2007·27 cites·15 claims
- 1470US2023147486A1Integrated freewheeling diode and extraction deviceMW RF SEMICONDUCTORS LLC·Filed 2022·Application pending·0 cites
- 1567US12477768B2SiC static induction transistor with double side cooling and method of manufactureANALOG POWER CONV LLC·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
- 1665US2022122964A1Integrated freewheeling diode and extraction deviceMW RF SEMICONDUCTORS LLC·Filed 2021·Application pending·0 cites
- 1761US8841718B2Pseudo self aligned radhard MOSFET and process of manufactureMICROSEMI CORP·Filed 2013·Granted Sep 23, 2014·2 cites·14 claims
- 1861US7671410B2Design and fabrication of rugged FRED, power MOSFET or IGBTMICROSEMI CORP·Filed 2006·Granted Mar 2, 2010·7 cites·8 claims
- 1961US2025349679A1Semiconductor device configured with immersion cooling and reduced parasiticsANALOG POWER CONV LLC·Filed 2024·Application pending·0 cites
- 2057US2025159972A1Reverse-conducting insulated gate bipolar transistorANALOG POWER CONV LLC·Filed 2023·Application pending·0 cites
- 2156US12074226B2Schottky diode integrated with a semiconductor deviceANALOG POWER CONV LLC·Filed 2021·Granted Aug 27, 2024·0 cites·15 claims
- 2256US11901406B2Semiconductor high-voltage termination with deep trench and floating field ringsANALOG POWER CONV LLC·Filed 2021·Granted Feb 13, 2024·0 cites·9 claims
- 2356US2025105083A1Electronic module configured for thermal managementANALOG POWER CONV LLC·Filed 2023·Application pending·0 cites
- 2452US10566416B2Semiconductor device with improved field layerMICROSEMI CORP·Filed 2018·Granted Feb 18, 2020·0 cites·23 claims
- 2551US12074198B2Semiconductor device with improved temperature uniformityANALOG POWER CONV LLC·Filed 2021·Granted Aug 27, 2024·0 cites·20 claims
- 2649US8110888B2Edge termination for high voltage semiconductor deviceZHANG JINSHU·Filed 2008·Granted Feb 7, 2012·1 cites·17 claims
- 2748US12224343B2Power device with partitioned active regionsANALOG POWER CONV LLC·Filed 2021·Granted Feb 11, 2025·0 cites·18 claims
- 2846US2011037139A1Schottky barrier diode (sbd) and its off-shoot merged pn/schottky diode or junction barrier schottky (jbs) diodeMICROSEMI CORP·Filed 2010·Application pending·0 cites
- 2945US2023021169A1Semiconductor device with deep trench and manufacturing process thereofANALOG POWER CONV LLC·Filed 2021·Application pending·0 cites
- 3043US2014339625A1Pseudo self aligned radhard mosfet and process of manufactureMICROSEMI CORP·Filed 2014·Application pending·0 cites
- 3142US11158703B2Space efficient high-voltage termination and process for fabricating sameMICROCHIP TECH INC·Filed 2019·Granted Oct 26, 2021·0 cites·14 claims
- 3238US2013313570A1Monolithically integrated sic mosfet and schottky barrier diodeMICROSEMI CORP·Filed 2013·Application pending·0 cites
- 3337US12081177B2Bridged class-D RF amplifier circuitANALOG POWER CONV LLC·Filed 2021·Granted Sep 3, 2024·0 cites·21 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →